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  alumina Datasheet PDF File

For alumina Found Datasheets File :: 4579    Search Time::0.812ms    
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    MMBTA55

Guangdong Kexin Industrial Co.,Ltd
Part No. MMBTA55
OCR Text ...mbient Total Device Dissipation alumina Substrate, (* 2) Derate above 25 Thermal Resistance, Junction-to-Ambient Junction temperature Storage temperature * 1. FR-5 = 1.0 X 0.75 X 0.062 in. * 2. alumina = 0.4 X 0.3 X 0.024 in. 99.5% alumina....
Description Driver Transistors

File Size 39.91K  /  2 Page

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    MMBD5148 MMBD5148A MMBD5148C MMBD5148S

SeCoS Halbleitertechnologie GmbH
Part No. MMBD5148 MMBD5148A MMBD5148C MMBD5148S
OCR Text ...mbient Total Device Dissipation alumina Substrate,(2) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RqJA PD 556 300 2.4 RqJA TJ, Tstg 417 - 55 to +150 Unit mW mW/C C...
Description Surface Mount Switching Diode

File Size 137.28K  /  2 Page

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    BAW156LT1

Leshan Radio Company, Ltd.
LRC[Leshan Radio Company]
Part No. BAW156LT1
OCR Text ...mbient Total Device Dissipation alumina Substrate, (2) T A = 25C Derate above 25C Thermal Resistance, Junction to Ambient Junction and Storage Temperature R JA PD R JA T J , T stg DEVICE MARKING BAW156LT1 = JZ ELECTRICAL CHAR...
Description Monolithic Dual Switching Diode 单片双开关二极管

File Size 36.61K  /  2 Page

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    FMBT3904

First Components International
Part No. FMBT3904
OCR Text ...ce t otal device dissipation alumina substrate, t a = 25 o c (note 2) derate above 25 o c thermal resistance junction and storage t emperature p d 225 m w 1.8 m w / o c r q ja 556 o c/w p d 300 m w 2.4 m w / o c r q ja 417 o c/w t j...
Description NPN General Purpose Transistor Collector - Emitter Voltage VCEO

File Size 86.91K  /  2 Page

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    LMBZ15VALT3G LMBZ9V1ALT3G LMBZ10VALT3G LMBZ33VALT3G LMBZ18VALT3G

Leshan Radio Company
Part No. LMBZ15VALT3G LMBZ9V1ALT3G LMBZ10VALT3G LMBZ33VALT3G LMBZ18VALT3G
OCR Text ... c/w total power dissipation on alumina substrate (note 3.) @ t a = 25 5 c derate above 25 5 c 5 p d 5 300 2.4 5 mw mw/ 5 c thermal resistance junction to ambient r q ja 417 5 c/w junction and storage temperature range t j , t stg 55 to +...
Description 24 and 40 Watt Peak Power Zener Transient Voltage Suppressors

File Size 406.29K  /  9 Page

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    HMC-ABH209

Hittite Microwave Corporation
Part No. HMC-ABH209
OCR Text ... lines on 0.127mm (5 mil) thick alumina thin film substrates are recommended for bringing RF to and from the chip (Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be used, the die should be raised 0.150mm (6 mils) so ...
Description GaAs HEMT MMIC MEDIUM POWER AMPLIFIER, 55 - 65 GHz

File Size 181.58K  /  6 Page

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    MMBT6517LT1 MMBT6517LT1_D ON2130

MOTOROLA[Motorola, Inc]
MOTOROLA[Motorola Inc]
ON Semi
Part No. MMBT6517LT1 MMBT6517LT1_D ON2130
OCR Text ...mbient Total Device Dissipation alumina Substrate,(2) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RqJA PD 556 300 2.4 RqJA TJ, Tstg 417 - 55 to +150 Unit mW mW/C C...
Description From old datasheet system
Motorola Preferred Device
High Voltage Transistor

File Size 229.86K  /  8 Page

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    MMBT6517 MMBT6517LT1

LRC[Leshan Radio Company]
Part No. MMBT6517 MMBT6517LT1
OCR Text ...mbient Total Device Dissipation alumina Substrate, (2) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 556 300 2.4 417 -55 to +150 Unit mW mW/C C/W mW mW/C C/W C RJ...
Description High Voltage Transistors(NPN Silicon)

File Size 165.41K  /  5 Page

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    FMBT390411

Formosa MS
Part No. FMBT390411
OCR Text ...w/ c o total device dissipation alumina substrate(2) p d mw junction to ambient r ja 417 o c/w p d thermal resistance 300 2.4 t= 25c a o derate above 25 c o mw/ c o 1.fr-5 = 1.0 x 0.75 x0.062 in. 2.alumina = 0.4 x 0.3 x 0.024 in. 99.5% alum...
Description 200mA Silicon NPN Epitaxial Planar Transistor

File Size 457.04K  /  11 Page

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