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  900v Datasheet PDF File

For 900v Found Datasheets File :: 1612    Search Time::1.375ms    
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    6MBI300U-170

List of Unclassifed Manufacturers
ETC
Part No. 6MBI300U-170
OCR Text ...25C VCE=10V, VGE=0V, f=1MHz VCC=900v IC=300A VGE=15V RG=2 VGE=0V IF=300A Tj=25C Tj=125C Tj=25C Tj=125C Characteristics Min. Typ. - - - - 4.5 6.5 - 2.35 - 2.70 - 2.05 - 2.40 - 30 - 0.58 - 0.32 - 0.10 - 0.80 - 0.15 - 2.10 - 2.30 - 1.80 - 2.0...
Description IGBT Module U-Series

File Size 135.18K  /  5 Page

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    CM1800HCB-34N

Powerex Power Semiconductors
Part No. CM1800HCB-34N
OCR Text ...8 16 12 20 i c = 1800a v cc = 900v t j = 25c 200 400 600 800 1000 1800 collector current, i c , (amperes) switching energy, (mj/p) 0 1000 500 1500 2000 2500 1600 1400 1200 v cc = 900v v ge = 15v r g(on) = 0.7? l s = 100nh t j = 125...
Description Single IGBTMOD HVIGBT Module 1800 Amperes/1700 Volts

File Size 439.28K  /  4 Page

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    2SK2224-01R

FUJI ELECTRIC HOLDINGS CO., LTD.
FUJI[Fuji Electric]
Part No. 2SK2224-01R
OCR Text ...che Proof N-channel MOS-FET 900v 4 3A 50W > Outline Drawing > Applications Switching Regulators UPS DC-DC converters General Purpose Power Amplifier > Maximum Ratings and Characteristics - Absolute Maximum Ratings (T...
Description N-channel MOS-FET

File Size 174.23K  /  2 Page

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    APT43GA90BD30

Microsemi Corporation
Part No. APT43GA90BD30
OCR Text 900v High Speed PT IGBT POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff VCE(ON) tradeoff results in superior efficien...
Description High Speed PT IGBT

File Size 231.67K  /  9 Page

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    TSM7N90CI TSM7N90CZ

Taiwan Semiconductor Company, Ltd
Taiwan Semiconductor Co...
Part No. TSM7N90CI TSM7N90CZ
OCR Text 900v n-channel power mosfet 1/10 version: a12 to - 220 ito - 220 pr...
Description 900v N-Channel Power MOSFET

File Size 393.01K  /  10 Page

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    APT15GP90B06 APT15GP90BG

Advanced Power Technology
Part No. APT15GP90B06 APT15GP90BG
OCR Text ...ctor cut-off current (v ce = 900v, v ge = 0v, t j = 25c) 2 collector cut-off current (v ce = 900v, v ge = 0v, t j = 125c) 2 gate-emitter leakage current (v ge = 20v) symbol v (br)ces v ge(th) v ce(on) i ces i ges units volt...
Description The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs

File Size 389.11K  /  6 Page

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    APT43GA90B APT43GA90S

Microsemi Corporation
Part No. APT43GA90B APT43GA90S
OCR Text 900v High Speed PT IGBT POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff VCE(ON) tradeoff results in superior efficien...
Description High Speed PT IGBT

File Size 212.72K  /  6 Page

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    ShenZhen FreesCale Electronics. Co., Ltd
Part No. AOTF6N90
OCR Text 900v,6a n-channel mosfet v ds i d (at v gs =10v) 6a r ds(on) (at v gs =10v) < 2.2 w symbol v ds v gs i dm i ar e ar e as peak diode recovery dv/dt dv/dt t j , t stg t l symbol r q ja r q jc * drain current limited by maximum ...
Description 900v,6A N-Channel MOSFET

File Size 363.18K  /  5 Page

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    APTC90DSK12CT1G

Microsemi Corporation
Part No. APTC90DSK12CT1G
OCR Text 900v RDSon = 120m max @ Tj = 25C ID = 30A @ Tc = 25C Application * AC and DC motor control * Switched Mode Power Supplies Features * * Ultra low RDSon Low Miller capacitance Ultra low gate charge Avalanche energy rated Very rugged SiC S...
Description Dual buck chopper Super Junction MOSFET SiC chopper diode

File Size 218.51K  /  6 Page

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    APTC90DSK12T1G

Microsemi Corporation
Part No. APTC90DSK12T1G
OCR Text 900v RDSon = 120m max @ Tj = 25C ID = 30A @ Tc = 25C Application * AC and DC motor control * Switched Mode Power Supplies Features * - Ultra low RDSon - Low Miller capacitance - Ultra low gate charge - Avalanche energy rated - Very rugged ...
Description Dual Buck chopper Super Junction MOSFET Power Module

File Size 221.72K  /  6 Page

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