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Renesas Electronics Corporation |
| Part No. |
R1QNA4418RBG-33IB0
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| Description |
QDRII/DDRII/ QDRII+/DDRII+ SRAM, LBGA, /Tray
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| Tech specs |
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Official Product Page
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Ericsson Power Modules
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| Part No. |
PKJ4418LEPI
|
| Description |
1-OUTPUT 46 W DC-DC REG PWR SUPPLY MODULE 2.300 X 2.400 INCH, 0.330 INCH HEIGHT, LOW PROFILE, HALF BRICK PACKAGE-9/8
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| File Size |
74.13K /
2 Page |
 View
it Online |
Download Datasheet
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Renesas Electronics Corporation |
| Part No. |
R1QBA4418RBG-18IB0
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| Description |
144-Mbit DDR™II+ SRAM 2-word Burst Architecture (2.5 Cycle Read latency)
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| Tech specs |
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Official Product Page
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Renesas Electronics Corporation |
| Part No. |
R1Q2A4418RBG-40IB0
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| Description |
144-Mbit QDR™ II SRAM 2-word Burst
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| Tech specs |
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Official Product Page
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Renesas Electronics Corporation |
| Part No. |
R1QGA4418RBG-25IB0
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| Description |
QDRII/DDRII/ QDRII+/DDRII+ SRAM, LBGA, /Tray
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| Tech specs |
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Official Product Page
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GTM, Corp.
Integrated Silicon Solution, Inc.
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| Part No. |
IS23SC4418 IS23SC4428
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| Description |
1024 x 8 Bits of EEPROM With Programmable Write Protection For Each Byte.(1024 x 8位，每个字节带可编程写保护的EEPROM) 1024 × 8位的EEPROM，具有可编程写保护每个字节。（1024 × 8位，每个字节带可编程写保护的EEPROM中）
1024 x 8 Bits of EEPROM With Programmable Write Protection For Each Byte And Two Bytes of Programmable Security Code(1024 x 8位，每个字节带可编程写保护，2字节可编程安全密码的EEPROM) 1024 × 8位的EEPROM，具有可编程写保护对于每一个字节，两个字节可编程保障法024 × 8位，每个字节带可编程写保护，2字节可编程安全密码的EEPROM中）
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| File Size |
81.17K /
12 Page |
View
it Online |
Download Datasheet |
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|
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Renesas Electronics Corporation |
| Part No. |
R1QDA4418RBG-19IB0
|
| Description |
144-Mbit QDR™II+ SRAM 4-word Burst Architecture (2.5 Cycle Read latency) with ODT
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| Tech specs |
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Official Product Page
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Renesas Electronics Corporation |
| Part No. |
R1QLA4418RBG-25IB0
|
| Description |
QDRII/DDRII/ QDRII+/DDRII+ SRAM, LBGA, /Tray
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| Tech specs |
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Official Product Page
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GSI Technology, Inc.
|
| Part No. |
GS864436E-166V GS864418E-150 GS864418E-225 GS864436E-225I
|
| Description |
4M x 18, 2M x 36 72Mb S/DCD Sync Burst SRAMs 2M X 36 CACHE SRAM, 7 ns, PBGA165
4M x 18, 2M x 36 72Mb S/DCD Sync Burst SRAMs 4M X 18 CACHE SRAM, 7.5 ns, PBGA165
4M x 18, 2M x 36 72Mb S/DCD Sync Burst SRAMs 4M X 18 CACHE SRAM, 6.5 ns, PBGA165
4M x 18, 2M x 36 72Mb S/DCD Sync Burst SRAMs 2M X 36 CACHE SRAM, 6.5 ns, PBGA165
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| File Size |
805.64K /
32 Page |
View
it Online |
Download Datasheet |
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SIEMENS AG
Infineon Technologies AG
SIEMENS[Siemens Semiconductor Group]
|
| Part No. |
SLE4428C SLE4428M2.2 SLE4418M2.2 SLE4418 SLE4418C SLE4428
|
| Description |
16MM PB 65168-010 1K X 8 3-WIRE SERIAL EEPROM, UUC8
ICs for Chip Cards 1K X 8 3-WIRE SERIAL EEPROM, UUC8
Intelligent 8-Kbit(1024 x 8-bit) EEPROM With Write Protection Function(智能8K1024 x 8 EEPROM) 智能8千位024 × 8位）具有写保护功能的EEPROM（智能化8K的位024 × 8位）的EEPROM
Intelligent 8-Kbit(1024 x 8-bit) EEPROM With Write Protection Function(智能K1024 x 8 EEPROM（带些保护功能）)
Intelligent 8-Kbit(1024 x 8-bit) EEPROM With Write Protection Function(智能K1024 x 8 EEPROM)
ICs for Chip Cards / Intelligent 8-Kbit EEPROM
SERIAL EEPROM,1KX8,MOS,WAFER,PLASTIC
SERIAL EEPROM,1KX8,MOS,MODULE,8PIN,PLASTIC
From old datasheet system
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| File Size |
381.02K /
17 Page |
View
it Online |
Download Datasheet |
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Maxim Integrated Products, Inc.
|
| Part No. |
MAX4415ESA MAX4418EUD
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| Description |
Low-Power, 3V/ 5V, 400MHz Single-Supply Op Amps with Rail-to-Rail Outputs OP-AMP, 6000 uV OFFSET-MAX, PDSO8
Low-Power RS-485 Full-Duplex Drivers/Receivers 10-MSOP -40 to 85 QUAD OP-AMP, 6000 uV OFFSET-MAX, PDSO14
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| File Size |
540.06K /
22 Page |
View
it Online |
Download Datasheet |
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