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IRF[International Rectifier]
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| Part No. |
IRFY044CM
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| OCR Text |
...on 100 Linear Derating Factor 0.8 Gate-to-Source Voltage 20 Single Pulse Avalance Energy 100 Avalance Current 16* Repetitive Avalanche Ene...6mm) from case for 10 sec) Weight 4.3(typical)
* ID current limited by pin diameter
To Order
... |
| Description |
POWER MOSFET N-CHANNEL(BVdss=60V, Rds(on)=0.040ohm, Id=16A*)
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| File Size |
241.65K /
6 Page |
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IRF[International Rectifier]
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| Part No. |
IRFY130CM
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| OCR Text |
...-- -- -- 2.0 3.0 -- -- -- -- 12.8 1.0 3.8 -- -- -- -- -- --
Typ Max Units
-- 0.1 -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- 8.7 8.7 --...6mm (0.25 in.) from package to center of die. Measured from the source lead, 6mm (0.25 in.) from pac... |
| Description |
POWER MOSFET N-CHANNEL(BVdss=100V, Rds(on)=0.18ohm, Id=14.4A)
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| File Size |
286.64K /
6 Page |
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IRF[International Rectifier]
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| Part No. |
IRFY340CM
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| OCR Text |
...40CM BVDSS 400V RDS(on) 0.55 ID 8.7A
Features
n n n n Hermetically Sealed Electrically Isolated Simple Drive Requirements Ease of Parall...6mm) from case for 10 sec) 4.3 (typical)
Units
A W W/K V mJ A mJ V/ns C C g
To Order
Previ... |
| Description |
POWER MOSFET N-CHANNEL(BVdss=400V, Rds(on)=0.55ohm, Id=8.7A)
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| File Size |
235.76K /
6 Page |
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it Online |
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IRF[International Rectifier]
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| Part No. |
IRFY430CM
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| OCR Text |
...ture Weight
IRFY430CM
4.5 2.8 18 75 0.6 20 280 4.5 7.5 3.5 -55 to 150 300 (0.063 in (1.6mm) from case for 10 sec) 4.3 (typical)
Units
A W W/K V mJ A mJ V/ns C C g
To Order
Previous Datasheet
IRFY430CM Device
Index
Next ... |
| Description |
POWER MOSFET N-CHANNEL(BVdss=500V, Rd(on)=1.5ohm, Id=4.5A)
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| File Size |
240.38K /
6 Page |
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it Online |
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IRF[International Rectifier]
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| Part No. |
IRFY9140CM IRFY9140C
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| OCR Text |
...otes refer to the last page -15.8 -10 -60 100 0.8 20 640 -15.8 10 -5.5 -55 to 150 300(0.063in./1.6mm from case for 10 sec) 4.3 (Typical)
Units A
W
W/C
V mJ A mJ V/ns
o
C
g
www.irf.com
1
9/29/03
IRFY9140C, IRFY9140CM... |
| Description |
POWER MOSFET THRU-HOLE (TO-257AA)
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| File Size |
253.79K /
7 Page |
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it Online |
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IRF[International Rectifier]
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| Part No. |
IRFY9140M IRFY9140
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| OCR Text |
...otes refer to the last page -15.8 -10 -60 100 0.8 20 640 -15.8 10 -5.5 -55 to 150 300(0.063in./1.6mm from case for 10 sec) 4.3 (Typical)
Units A
W
W/C
V mJ A mJ V/ns
o
C
g
www.irf.com
1
01/18/07
IRFY9140, IRFY9140M
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| Description |
POWER MOSFET THRU-HOLE (TO-257AA)
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| File Size |
277.03K /
7 Page |
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it Online |
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IRF[International Rectifier]
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| Part No. |
IRGIH50F
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| OCR Text |
...of Fast Speed operation 3 kHz - 8 kHz High operating frequency Switching-loss rating includes all "tail" losses
C
Fast Speed IGBT
VCE...6mm from case for 10s) 10.5 (typical)
Units
V A
V W
C g
Thermal Resistance
Parameter
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| Description |
1200V DISCRETE Hi-Rel IGBT in a TO-259AA package
INSULATED GATE BIPOLAR TRANSISTOR
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| File Size |
535.74K /
8 Page |
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IRF[International Rectifier]
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| Part No. |
IRGMC30F
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| OCR Text |
...of Fast Speed operation 3 kHz - 8 kHz High operating frequency Switching-loss rating includes all "tail" losses
C
Fast Speed IGBT
VCE...6mm from case for 10s) 9.3 (typical)
Units
V A
V W
C g
Thermal Resistance
Parameter
R... |
| Description |
INSULATED GATE BIPOLAR TRANSISTOR
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| File Size |
541.07K /
8 Page |
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it Online |
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IRF[International Rectifier]
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| Part No. |
IRGMC30U
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| OCR Text |
...n) max = 3.0V
@VGE = 15V, IC = 8.0A
Description
n-channel
Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier ...6mm from case for 10s) 9.3 (typical)
Units
V A
V W
C g
Thermal Resistance
Parameter
R... |
| Description |
600V DISCRETE Hi-Rel IGBT in a TO-254AA package
INSULATED GATE BIPOLAR TRANSISTOR
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| File Size |
543.07K /
8 Page |
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it Online |
Download Datasheet |
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Price and Availability
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