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Xian Semipower Electron...
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| Part No. |
SWF634
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| OCR Text |
... junction temperature. 2. l = 4.5mh, i as = 9a, v dd = 50v, r g =50?, starting t j = 25 o c 3. i sd 9a, di/dt = 300a/us, v dd bv dss , staring t j =25 o c 4. pulse test : pulse width 300us, duty cycle 2% 5. essentially independent of op... |
| Description |
N-channel MOSFET
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| File Size |
708.74K /
7 Page |
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Cystech Electonics Corp...
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| Part No. |
MTD07N04H8
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| OCR Text |
...le pulse avalanche energy @ l=0.5mh, i d =20amps, v dd =50v ...9a dynamic *qg - 30.2 45 *qgs - 6.5 - *qgd - 7.0 - nc v ds =20v, i d =16a, v gs =10v... |
| Description |
N-Channel Enhancement Mode Power MOSFET
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| File Size |
406.48K /
9 Page |
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it Online |
Download Datasheet |
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Wuxi NCE Power Semicond...
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| Part No. |
NCE0117
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| OCR Text |
...n tj=25 ,v dd =50v,v g =10v,l=0.5mh,rg=25 ?
nce0117 pb free product http://www.ncepower.com wuxi nce power semiconductor co., ltd page v1.0 3 test circuit 1) e ... |
| Description |
NCE N-Channel Enhancement Mode Power MOSFET
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| File Size |
341.35K /
7 Page |
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it Online |
Download Datasheet |
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Wuxi NCE Power Semicond...
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| Part No. |
NCE0117K
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| OCR Text |
...ion tj=25 ,vdd=50v,vg=10v,l=0.5mh,rg=25 ?
nce0117 k pb free product http://www.ncepower.com wuxi nce power semiconductor co., ltd page v1.0 3 test circuit 1 ... |
| Description |
NCE N-Channel Enhancement Mode Power MOSFET
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| File Size |
444.22K /
7 Page |
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it Online |
Download Datasheet |
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SamHop Microelectronics...
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| Part No. |
STUD10N20
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| OCR Text |
...ture. d.starting t j =25 c,l=0.5mh,v dd = 50v.(see figure13) e.mounted on fr4 board of 1 inch 2 ,2oz. _ _
stu10n20 std10n20 ver 1.0 www.s...9a v gs =4v 0 v gs =3.5v v gs =4.5v
stu10n20 std10n20 ver 1.0 www.samhop.com.tw aug,14,2014 4 r ds... |
| Description |
Super high dense cell design for low RDS(ON).
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| File Size |
118.12K /
10 Page |
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it Online |
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Price and Availability
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