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  50-1700v Datasheet PDF File

For 50-1700v Found Datasheets File :: 534    Search Time::1.359ms    
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    SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
Part No. BSM150GB170DN2E3166 150B17E2 C67070-A2709-A67
OCR Text ...00 A/s Tj = 25 C Tj = 125 C 14 50 - Semiconductor Group 3 Aug-01-1996 BSM150GB170DN2 E3166 Power dissipation Ptot = (TC) parameter: Tj 150 C 1300 W 1100 Safe operating area IC = (VCE) parameter: D = 0, TC = 25C , Tj 15...
Description From old datasheet system
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Enlarged diode area)

File Size 129.89K  /  9 Page

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    FZB1200BR17KF6CB2 FZ1200R17KF6CB2

eupec GmbH
Part No. FZB1200BR17KF6CB2 FZ1200R17KF6CB2
OCR Text ...2 It 380 kA2s RMS, f = 50 Hz, t = 1 min. VISOL 4 kV Charakteristische Werte / Characteristic values Transistor / Trans...1700V, V GE = 0V, Tvj = 25C Cres ICES 4 5 nF mA VCE = 0V, V GE = 20V, Tvj = 25C IGES ...
Description Hochstzulassige Werte / Maximum rated values
IGBT Power Module

File Size 169.66K  /  9 Page

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    Panasonic
Part No. 2SC5418
OCR Text 50.5 4.5 10.0 s Features q q q 3.20.1 5 26.50.5 3.00.3 High breakdown voltage, and high reliability through the use of a g...1700V, IE = 0 VEB = 5V, IC = 0 VCE = 5V, IC = 10A IC = 10A, IB = 2.8A IC = 10A, IB = 2.8A VCE = 10V,...
Description For horizontal deflection output

File Size 39.98K  /  3 Page

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    2SC5418

PANASONIC[Panasonic Semiconductor]
Part No. 2SC5418
OCR Text 50.5 4.5 10.0 s Features q q q 3.20.1 5 26.50.5 3.00.3 High breakdown voltage, and high reliability through the use of a g...1700V, IE = 0 VEB = 5V, IC = 0 VCE = 5V, IC = 10A IC = 10A, IB = 2.8A IC = 10A, IB = 2.8A VCE = 10V,...
Description For horizontal deflection output

File Size 35.41K  /  2 Page

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    DIM200MHS17-A000

http://
DYNEX[Dynex Semiconductor]
Dynex Semiconductor Ltd.
Part No. DIM200MHS17-A000
OCR Text ...0nH Min. Typ. 590 300 40 320 90 50 65 195 42 Max. Units ns ns mJ ns ns mJ C C A mJ Tcase = 125C unless stated otherwise Symbol td(off) tf EOFF td(on) tr EON Qrr Irr EREC Parameter Turn-off delay time Fall time Turn-off energy loss Turn-o...
Description Half Bridge IGBT Module

File Size 146.53K  /  10 Page

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    TOSHIBA
Part No. 2SC5859
OCR Text ...ipation 200 150 100 50 0 0 25 50 75 100 125 150 Case temperature Tc (C) 4 2004-5-18 2SC5859 RESTRICTIONS ON PRODUCT USE * The information contained herein is subject to change without n...
Description TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE

File Size 201.23K  /  6 Page

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    BU2725DX

NXP Semiconductors
Philips Semiconductors
Part No. BU2725DX
OCR Text ...25DX 120 110 100 90 80 70 60 50 40 30 20 10 0 PD% Normalised Power Derating with heatsink compound VCC LC IBend VCL LB T.U.T. CFB -VBB 0 20 40 60 80 Ths / C 100 120 140 Fig.9. Normalised ...
Description Silicon Diffused Power Transistor

File Size 66.90K  /  7 Page

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    Philips
Part No. BU2725DX BU2725DX_2
OCR Text ...25DX 120 110 100 90 80 70 60 50 40 30 20 10 0 PD% Normalised Power Derating with heatsink compound VCC LC IB1 VCL LB T.U.T. CFB -VBB 0 20 40 60 80 Ths / C 100 120 140 Fig.9. Normalised pow...
Description Silicon Diffused Power Transistor
From old datasheet system

File Size 56.89K  /  7 Page

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    EUPEC[eupec GmbH]
Part No. BYM600A170DN2 C67070-A2902-A67
OCR Text ...iode ZthJC 10 -2 D = 0.50 10 -3 0.20 0.10 0.05 0.02 0.01 10 -4 single pulse 10 -5 -5 10 10 -4 10 -3 10 -2 10 -1 s 10 0 TC tp Forward characteristics of fast recovery reverse diode...
Description Diode Power Module

File Size 207.55K  /  5 Page

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