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  25mw Datasheet PDF File

For 25mw Found Datasheets File :: 3930    Search Time::1.578ms    
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    LD67D7S-A

Sensortechnics GmbH
Part No. LD67D7S-A
OCR Text ...) b ld , pd anod e (fig. 2) c ld an ode, pd cath ode (fi g. 3) bottom view pin configuration fig. 2 ld6 7 d7s b...5mw operating voltage vop - 2. 3 2. 6 v po=5mw l asing w avel ength p 660 670 680 nm po=...
Description Optical Leveler

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    PT510 PT501 PT510A PT501C PT510C PT501A PT501B

Sharp Electrionic Components
Part No. PT510 PT501 PT510A PT501C PT510C PT501A PT501B
OCR Text 2. TO -18 type standard package 3. With base terminal : PT510 TO-18 Type Narrow Acceptance Phototransistor s Outline Dimensions 4.7 0....5mW/cm2 5mW/cm2 2.5mW/cm2 10 100k 5 50k 0 2 4 6 8 10 12 14 16 Collector-emit...
Description PHOTOTRANSISTOR | NPN | 800NM PEAK WAVELENGTH | CAN-4.7 光电晶体管|叩| 800NM峰值波长|的CAN - 4.7
55V Single N-Channel HEXFET Power MOSFET in a I-Pak package; Similar to IRFU2405 with Lead Free Packaging
150V Single N-Channel HEXFET Power MOSFET in a TO-262 package; Similar to IRFSL33N15D with Lead Free Packaging
such as active OR'ing. Shipped in Tape and Reel only. Part is not available in bulk, TR is implied in part number.; A IRF6610 with Standard Tape and Reel
55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package; A IRF2805S with Standard Packaging
TO-18 Type Narrow Acceptance Phototransistor

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    ML7XX16 ML7XX16SERIES

Mitsubishi Electric Corporation
Mitsubishi Electric Semiconductor
http://
Part No. ML7XX16 ML7XX16SERIES
OCR Text 2.5Gbps InGaAsP DFB LASER DIODE TYPE NAME ML725B16F FEATURES /4 phase shifted grating structure Wide temperature range operation (-2...5mW CW,Po=5mW,Tc=85C CW,Po=5mW CW,Po=5mW CW,Po=5mW,Tc=-20C CW,Po=5mW,Tc=-20C CW,Po=5mW +85C +85C Con...
Description 2.5Gbps InGaAs DFB LASER DIODE
2.5Gbps InGaAsP DFB LASER DIODE

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    ML7XX32 ML792H32-01 ML792E32 ML792E32-01 ML792H32

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MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
Mitsubishi Electric, Corp.
Part No. ML7XX32 ML792H32-01 ML792E32 ML792E32-01 ML792H32
OCR Text ...perature Conditions Ratings 120 2 0 ~ +85 -40 ~+100 Unit mA V o C C o ELECTRICAL/OPTICAL CHARACTERISTICS (Tc=25 C) o Symbol It...5mW CW,Po=5mW,Tc=85 oC CW,Po=5mW CW,Po=5mW CW,Po=5mW,Tc= 0 oC ~ +85 oC CW,Po=5mW,Tc= 0 oC ~ +85 oC C...
Description 10Gbps InGaAsP DFB LASER DIODE 10Gbps的InGaAsP的DFB激光器二极

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    DL-3038-034

Sanyo Semicon Device
Part No. DL-3038-034
OCR Text ...* Low operating voltage : Vop = 2.2 V (Typ.) Package Ver.2 Apr. 1999 A@A@ 0 o9.0 - 0.03 o5.35 o4.75 0.15 o2.1 Effective window diameter ...5mW Po=5mW Po=5mW Po=5mW Po=5mW Po=5mW Po=5mW Min. 25 6 0.05 Typ. 30 40 2.3 635 30 8 0.4 0.2 10 Max....
Description RED LASER DIODE

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    QL65D6SA

List of Unclassifed Manufacturers
ETC
Part No. QL65D6SA
OCR Text ...ols P V V Topr Tstg Values 5 2 30 -10 ~ +60 -40 ~ +85 Unit mW V V C C ELECTRICAL and OPTICAL CHARACTERISTICS at Tc=25C Items Opti...5mW 3~5 mW Po=5mW Po=5mW Po=5mW Po=5mW Po=5mW Po=5mW Po=5mW p Im Beam Angle Monitor...
Description InGaAlP Laser Diode

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    PD15-22B PD15-22TR8

Everlight Electronic Co., Ltd.
Everlight Electronics Co., Ltd
Part No. PD15-22B PD15-22TR8
OCR Text ... : DTD-152-001 REV : PAGE : 1.0 2/7 1206 Package Silicon PIN Photodiode MODEL NO : PD15-22B/TR8 Package Dimensions : Notes : 1....5mW/c p=940nm Ee=5mW/c p=940nm VR=5V Ee=0mW/c VR=10V Ee=0mW/c IR=100A Ee=0mW/c f=1MHZ VR=5V RL=1000 ...
Description 1206 Package Silicon PIN Photodiode 1206包硅PIN光电二极

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    CLT132 CLT133 CLT130 CLT131

Clairex Technologies
ETC[ETC]
List of Unclassifed Manufacturers
Part No. CLT132 CLT133 CLT130 CLT131
OCR Text ....136 (3.45) BASE EMITTER 0.100 (2.54) dia 0.060 (1.52) max 0.025 (0.64) max 0.019 (0.48) 0.016 (0.41) 0.147 (3.73) 0.137 (3.48) ALL DIMEN...5mW/cm 2 VCE=5V, Ee=1.5mW/cm 2 VCE=5V, Ee=1.5mW/cm 2 VCE=5V, Ee=1.5mW/cm VCE=10V, Ee=0 IC=100A VCC=5...
Description Phototransistor, TO-18 metal can
NPN Silicon Phototransistors

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