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Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
HGTP3N60C3 HGTD3N60C3S HGTD3N60C3S9A
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| OCR Text |
... 150oC, RG = 82, VGE = 15V, L = 1mh IC = IC110, VCE = 0.5 BVCES TJ = 150oC ICE = IC110 VCE(PK) = 0.8 BVCES VGE = 15V RG = 82 L = 1mh Test Circuit (Figure 18)
Gate to Emitter Plateau Voltage On-State Gate Charge
VGEP Qg(ON) td(ON)I trI... |
| Description |
6A, 600V, UFS Series N-Channel IGBTs 6 A, 600 V, N-CHANNEL IGBT, TO-252AA
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| File Size |
263.56K /
7 Page |
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FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
HGTP7N60C3D_05 HGT1S7N60C3D HGT1S7N60C3DS HGTP7N60C3D HGTP7N60C3D05
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| OCR Text |
...C TJ = RG = 50 , VGE = 15V, L = 1mh 150oC, VCE(PK) = 480V VCE(PK) = 600V 3.0 40 60 5.0 8 6.0 V A A V
SSOA VGEP
Switching SOA Gate to Emitter Plateau Voltage
IC = IC110, VCE = 0.5 BVCES
Switching Characteristics
td(ON)I trI td(O... |
| Description |
14A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes
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| File Size |
486.92K /
9 Page |
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FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
HGTP7N60C3 HGTD7N60C3S HGTD7N60C3S9A
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| OCR Text |
...J = 150oC RG = 50 VGE = 15V L = 1mh
Gate to Emitter Threshold Voltage
VGE(TH) IGES SSOA
Gate to Emitter Leakage Current Switching SOA
VCE(PK) = 480V VCE(PK) = 600V 40 6
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nA A A
Gate to Emitter Plateau Voltage On-State ... |
| Description |
14A,600V, UFS Series N-Channel IGBTs
14A, 600V, UFS Series N-Channel IGBTs
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| File Size |
164.50K /
8 Page |
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IRF[International Rectifier]
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| Part No. |
IRGB4045DPBF
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| OCR Text |
...CC = 400V, VGE = 15V RG = 47, L=1mh, LS= 150nH, TJ = 25C
Energy losses include tail and diode reverse recovery
CT4
IC = 6.0A, VCC = 400V RG = 47, L=1mh, LS= 150nH TJ = 25C IC = 6.0A, VCC = 400V, VGE = 15V RG = 47, L=1mh, LS= 150nH, TJ ... |
| Description |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
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| File Size |
778.63K /
10 Page |
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IRF[International Rectifier]
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| Part No. |
IRGB4059DPBF
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| OCR Text |
...C = 400V, VGE = 15V RG = 100, L=1mh, LS= 150nH, TJ = 25C
Energy losses include tail and diode reverse recovery
CT4
IC = 4A, VCC = 400V RG = 100, L=1mh, LS= 150nH TJ = 25C IC = 4A, VCC = 400V, VGE = 15V RG = 100, L=1mh, LS= 150nH, TJ = ... |
| Description |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODEINSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
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| File Size |
283.45K /
10 Page |
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IRF[International Rectifier]
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| Part No. |
IRGB4064DPBF
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| OCR Text |
...ergy Loss vs. IC TJ = 175C; L = 1mh; VCE = 400V, RG = 22; VGE = 15V.
350 300 250 200 150 100 50 0 0 25 50 75 100 125
Fig. 14 - Typ. Switching Time vs. IC TJ = 175C; L=1mh; VCE= 400V RG= 22; VGE= 15V
1000
EOFF
EON
Swiching Time... |
| Description |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODEINSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
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| File Size |
367.91K /
10 Page |
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IRF[International Rectifier]
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| Part No. |
IRGI4061DPBF
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| OCR Text |
... = 400V, VGE = 15V J RG = 22, L=1mh, LS= 150nH, TJ = 25C
Energy losses include tail and diode reverse recovery
IC = 11A, VCC = 400V ns RG = 22, L=1mh, LS= 150nH TJ = 25C IC = 11A, VCC = 400V, VGE = 15V J RG = 22, L=1mh, LS= 150nH, TJ = ... |
| Description |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODEINSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
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| File Size |
285.15K /
10 Page |
View
it Online |
Download Datasheet |
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