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  110 120v Datasheet PDF File

For 110 120v Found Datasheets File :: 904    Search Time::2.047ms    
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    2SC4511

SANKEN[Sanken electric]
Part No. 2SC4511
OCR Text ... Ambient Temperature Ta(C) 110
Description Silicon NPN Triple Diffused Planar Transistor(Audio and General Purpose)

File Size 23.05K  /  1 Page

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    Bookly
Part No. BM01N60
OCR Text ...n-to-Ambient Typ ---Max 4.17 50 110 Units CW CW CW * When mounted on the minimum pad size recommended (PCB Mount) BM01N60 Electrica...120v 10 Ciss 150 VDS = 300V VDS = 480V VGS , Gate-Source Voltage [V] 8 Capacitance ...
Description MOSFET

File Size 814.96K  /  8 Page

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    IRFIB6N60A IRFIB6N60APBF

IRF[International Rectifier]
Part No. IRFIB6N60A IRFIB6N60APBF
OCR Text ... 4.80 (.189) 4.60 (.181) 2.80 (.110) 2.60 (.102) LEAD ASSIGNMENTS 1 - GATE 2 - DRAIN 3 - SOURCE 7.10 (.280) 6.70 (.263) 16.00 (.630) 15.80 (.622) 1.15 (.045) MIN. 1 2 3 NOTES: 1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982 2...
Description 600V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
Power MOSFET(Vdss=600V, Rds(on)max=0.75ohm, Id=5.5A)
HEXFET? Power MOSFET
Power MOSFET(Vdss=600V/ Rds(on)max=0.75ohm/ Id=5.5A)

File Size 146.70K  /  8 Page

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    IRFS9N60A

Fairchild Semiconductor
International Rectifier
Part No. IRFS9N60A
OCR Text ...8 (.20 8) 4 .78 (.18 8) 2.7 9 (.110 ) 2.2 9 (.090 ) 2.61 (.1 03 ) 2.32 (.0 91 ) 1.3 9 (.0 5 5) 1.1 4 (.0 4 5) 8.8 9 (.3 50 ) R E F. 1.7 8 (.07 0) 1.2 7 (.05 0) 1 3 3X 1.40 (.0 55) 1.14 (.0 45) 3X 5 .08 (.20 0) 0 .93 (.03 7...
Description 600V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
HEXFET? Power MOSFET
SMPS MOSFET

File Size 103.89K  /  9 Page

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    TDA2003 1449 TDA2003H TDA2003V

ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
Part No. TDA2003 1449 TDA2003H TDA2003V
OCR Text ...40 (typ.) MAX. 0.189 0.054 0.110 0.053 0.022 0.047 0.041 0.055 0.134 0.142 0.268 0.276 0.409 0.409 0.703 0.715 0.620 0.628 0.843 0.850 0.886 0.894 0.051 0.118 0.622 0.260 0.008 0.177 0.187 0.157 0.167 OUTLINE AND MECHANICAL DATA Pe...
Description From old datasheet system
10W CAR RADIO AUDIO AMPLIFIER

File Size 151.00K  /  10 Page

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    Sanyo
Part No. 2SC3332
OCR Text ...1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 83002TN (KT)/71598HA (KT)/3207KI/N257KI/3135KI/O183KI, TS No.1334-1/4 2SA1319/2SC3332 Continued from preceding page. Parameter Gain Bandwidth Product Common Base Output Capacitance Collec...
Description PNP/NPN Epitaxial Planar Silicon Transistors

File Size 45.61K  /  4 Page

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    IRF6218

International Rectifier
ir
Part No. IRF6218
OCR Text ...rent Max. -150 20 -27 -19 -110 250 1.6 8.2 -55 to + 175 Units V A c Maximum Power Dissipation Linear Derating Factor Peak Dio...120v, VGS = 0V VDS = -120v, VGS = 0V, TJ = 150C VGS = -20V VGS = 20V Dynamic @ TJ = 25C (unless o...
Description SMPS MOSFET

File Size 118.91K  /  7 Page

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    SSU1N60B SSR1N60B SSR1N60BTM SSU1N60BTU

FAIRCHILD[Fairchild Semiconductor]
Part No. SSU1N60B SSR1N60B SSR1N60BTM SSU1N60BTU
OCR Text ...n-to-Ambient Typ ---Max 4.53 50 110 Units C/W C/W C/W * When mounted on the minimum pad size recommended (PCB Mount) (c)2001 Fairchild S...120v 10 VDS = 300V 200 Ciss VGS, Gate-Source Voltage [V] 8 Capacitance [pF] VDS ...
Description    600V N-Channel MOSFET
600V N-Channel B-FET / Substitute of SSP1N60A
600V N-Channel B-FET / Substitute of SSU1N60A

File Size 634.36K  /  9 Page

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    STV9555

ST Microelectronics
STMicroelectronics
Part No. STV9555
OCR Text ...: low (Note 1) VOUT = 50V 20 10 110 12 15 60 40 115 15 V V mA A mA STATIC parameters (VCC = 12V, VDD = 110V, Tamb = 25 C) VOUT dVOUT/dVDD...120v EHT (27kV) Case #1: Low Rx.Cx A spot might appear during the switch-off phase Case #2: High Rx....
Description 9.5 NS TRIPLE CHANNEL HIGH VOLTAGE VIDEO AMPLIFIER
9.5NSTRIPLECHANNELHIGHVOLTAGEVIDEOAMPLIFIER
9.5 ns TRIPLE-CHANNEL HIGH VOLTAGE VIDEO AMPLIFIER

File Size 696.53K  /  24 Page

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    2SC4159 2SA1606 A1606

Sanyo Semicon Device
Sanyo Electric Co.,Ltd.
Part No. 2SC4159 2SA1606 A1606
OCR Text ...1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 82098HA (KT)/5277TA No.2535-1/4 2SA1606/2SC4159 Continued from preceding page. Parameter Collector-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter B...
Description 2SA1606
NPN Epitaxial Planar Silicon Transistors High-Voltage Switching, AF 100W Driver Applications
PNP/NPN Epitaxial Planar Silicon Transistors
NPN Epitaxial Planar Silicon Transistors for High-Voltage SwitchingAF 100W Driver Application(用于高电压转换,AF 100W驱动器应用的NPN硅外延平面型晶体

File Size 103.64K  /  4 Page

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For 110 120v Found Datasheets File :: 904    Search Time::2.047ms    
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