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Samsung Electronic
SAMSUNG[Samsung semiconductor]
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| Part No. |
S1A0497X01-S0B0 S1A0497X01 S1A0497X01-I0B0
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| OCR Text |
...047F
X2 G Q1 R2002 C26 4.7F /50V R C27 4.7F /50V C4 0.068F C15 450K 0.082F C16
T1 C14 1F X1 456K
C13
0.022F
4.7k
F1
330pF
APPLICATION CIRCUIT
C23
C22
0.018F
0.018F
560
560
C31
C33
C34
... |
| Description |
FM FRONT END
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| File Size |
173.18K /
10 Page |
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SAMSUNG[Samsung semiconductor]
Samsung Electronic
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| Part No. |
S1A0291X01-A0B0 DS_S1A0291X01 S1A0291X01 DSS1A0291X01
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| OCR Text |
...16V R56 10
R26 10k R26 1k 1F/50V R17 82 C23 47F/10V C29 100pF C30 0.018F C31 1000pF D6 1N4148 C20 100pF R20 100 R22 R23 10k C30 100F/10V C27 1F/50V C28 100pF R28 100 R24 2.7k R66 2.2k R43 10k Q9 C945
C32
R27 47U
R37 4.7k
.
... |
| Description |
PB/REC PRE AMP FOR 2 DECK
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| File Size |
146.84K /
8 Page |
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TSC[Taiwan Semiconductor Company, Ltd]
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| Part No. |
TSD882CK TSD882
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| OCR Text |
50V Ic = 3A VCE (SAT), = 0.25V(typ.) @Ic / Ib = 2A / 0.2A
Features
Low VCE (SAT). Excellent DC current gain characteristics
Ordering Information
Part No. TSD882CK Packing Bulk Pack Package TO-126
Structure
Epitaxial planar type.... |
| Description |
Low Vce(sat) NPN Transistor
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| File Size |
45.74K /
3 Page |
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Vishay Semiconductors
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| Part No. |
BPW97
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| OCR Text |
...) 10 0 10 1 10 2 10 3 10 4 v r =50v figure 1. reverse dark current vs. ambient temperature 0.8 0.9 1.0 1.1 1.2 1.4 1.3 i relative reverse light current ra rel t amb ambient temperature ( 5 c ) 94 8446 20 40 60 80 100 v r =50v ... |
| Description |
Photo Diode, PIN PHOTO DIODE, HERMETIC SEALED, TO-18, 3 PIN
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| File Size |
108.83K /
6 Page |
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| Part No. |
JANSG2N7469U2
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| OCR Text |
...source charge ? ? 55 nc v ds = 50v q gd gate-to-drain (?miller?) charge ? ? 65 t d (on) turn-on delay time ? ? 35 v dd = 50v, i d = 45a, t r rise time ? ? 125 v gs =12v, r g = 2.35 ? t d (off) turn-off delay time ? ? 75 t f fall time ?... |
| Description |
75 A, 100 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET
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| File Size |
127.64K /
8 Page |
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TSC[Taiwan Semiconductor Company, Ltd]
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| Part No. |
TSD882SCY TSD882S TSD882SCT
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| OCR Text |
50V Ic = 3A VCE (SAT), = 0.3V(typ.) @Ic / Ib = 2A / 20mA
1. Base 2. Collector 3. Emitter
Features
Low VCE (SAT). Excellent DC current gain characteristics
Ordering Information
Part No. TSD882SCT TSD882SCY Packing Bulk Pack Tape &... |
| Description |
Low Vce(sat) NPN Transistor
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| File Size |
51.20K /
3 Page |
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TSC[Taiwan Semiconductor Company, Ltd]
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| Part No. |
TSM2N7002ECX TSM2N7002E TSM2N7002ECU
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| OCR Text |
50V N-Channel Enhancement Mode MOSFET
Pin assignment: 1. Gate 2. Source 3. Drain
VDS = 50V RDS (on), Vgs @ 10V, Ids @ 250mA = 3 RDS (on), Vgs @ 5V, Ids @ 50mA = 4
Features
Advanced trench process technology High density cell design ... |
| Description |
50V N-Channel Enhancement Mode MOSFET
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| File Size |
200.01K /
5 Page |
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TSC[Taiwan Semiconductor Company, Ltd]
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| Part No. |
TSM2N7002EDCU6 TSM2N7002ED
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| OCR Text |
50V Dual N-Channel Enhancement Mode MOSFET
Pin assignment: 1. Source (2) 6. Drain (2) 2. Gate (2) 5. Gate (1) 3. Drain (1) 4. Source (1)
VDS = 50V RDS (on), Vgs @ 10V, Ids @ 250mA = 3 RDS (on), Vgs @ 5V, Ids @ 50mA = 4
Features
Dual... |
| Description |
50V Dual N-Channel Enhancement Mode MOSFET
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| File Size |
197.68K /
5 Page |
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it Online |
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Price and Availability
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