... to +125
Units
mA A V V V C/w C/w C C
VRRM VRwM VR RJA RJL Tstg TJ
*These ratings are limiting values above which the serviceabili...3 2 1 0.5
I R - REVERSE LEAKAGE CURRENT ( A)
Forward Voltage vs. Temperature
Reverse Leaka...
...age Temperature Range (**) 80 C/w DC operation
Value
- 55 to 175 36
Units
C C
Conditions
Max. Junction Temperature Range (*) -...3 - Typical Junction Capacitance Vs. Reverse Voltage
100
(C/w)
10
Thermal Impedance Z
D...
Description
100V 1A Schottky Discrete Diode in a SMB package SCHOTTKY RECTIFIER
... T E1 P2 D0 D1
F E2 B0 wc
w
Tc K0
P1
A0
User Direction of Feed
Dimensions are in millimeter Pkg type SOT-23 (8mm)
A0
3.15 +/-0.10
B0
2.77 +/-0.10
w
8.0 +/-0.3
D0
1.55 +/-0.05
D1
1.125 +/-0.125
E1
1...
...0 to +85 -40 to +150 260 I
A w
%
Power dissipation Junction Operating temperature temperature
Pd -Cl Topr Tstg Tsol
Refer to Fig. 1
(*3)
`C % % For 10 s
Storage temperature Soldering temperature
(* 1) All are open e...
...100A/s, Tjmax =150C
A V/ns V w
dv/dt
VGS VGS Ptot
Gate source voltage Gate source voltage AC (f >1Hz) Power dissipation, TC = 25C
...3) Linear derating factor Linear derating factor, FullPAK Soldering temperature, 1.6 mm (0.063 in.) ...
Description
Cool MOSPower Transistor 酷马鞍山⑩功率晶体管 Cool MOS⑩ Power Transistor Cool MOS Power Transistor for lowest Conduction Losses & fastest Switching
...te source voltage static
A V w
Gate source voltage AC (f >1Hz)
Power dissipation, TC = 25C
83
32
Operating and storage tempe...3 A, Tj = 125 C
dv/dt
50
V/ns
Thermal Characteristics Parameter Symbol min. RthJC RthJC_...
Description
Cool MOS⑩ Power Transistor Cool MOS Power Transistor
...r dissipation, T C = 25C
A V w C
VGS Ptot T j , T stg
83 -55... +150
Operating and storage temperature
Rev. 2.1
Page 1
...3 A, Tj = 125 C
dv/dt
20
V/ns
Thermal Characteristics Parameter Symbol min. RthJC RthJA ...
Description
Cool MOS?/a> Power Transistor Cool MOS⑩ Power Transistor Cool MOS Power Transistor for lowest Conduction Losses
....3 6 20 83 -55... +150 A V/ns V w C mJ
Avalanche energy, repetitive tAR limited by Tjmax 1)
ID =7.3A, VDD =50V
Avalanche current, repetitive tAR limited by Tjmax Reverse diode dv/dt
IS =7.3A, VDS < VDD , di/dt=100A/s, Tjmax=150C
...
Description
for lowest Conduction Losses & fastest Switching Cool MOS Power Transistor Cool MOS⑩ Power Transistor
... 0.5 7.3 6 20 30 83 -55... +150 w C 2003-09-16 A V/ns V mJ
Gate source voltage static Gate source voltage AC (f >1Hz) Power dissipation, TC = 25C Operating and storage temperature
Page 1
VGS VGS Ptot T j , T stg
Final data Maximum...
Description
Cool MOS& Power Transistor Cool MOS Power Transistor Cool MOS Power Transistor
...r dissipation, T C = 25C
A V w C
VGS Ptot T j , T stg
83 -55... +150
Operating and storage temperature
Rev. 2.1
Page 1
...3 A, Tj = 125 C
Symbol
dv/dt
Value
20
Unit
V/ns
Thermal Characteristics Parameter
Th...
Description
for lowest Conduction Losses Cool MOS Power Transistor Cool MOS⑩ Power Transistor