| |
|
 |
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| Part No. |
KMM366F883BK2 KMM366F803BK2
|
| OCR Text |
... ras to cas precharge time t rpc 5 5 ns 13 access time from cas precharge t cpa 28 35 ns 3,13 hyper page cycle time t hpc 20 25 ns 12 h...2. 3. 4. 5. 6. 7. 8. 9. 10. 11.
dram module kmm366f80(8)3bk2 ras v ih - v il - cas v ih - v... |
| Description |
8M x 64 DRAM DIMM(8M x 64 动RAM模块)
|
| File Size |
416.71K /
20 Page |
 View
it Online |
Download Datasheet
|
| |
|
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| Part No. |
KMM364C213CK
|
| OCR Text |
...precharge to cas hold time t rpc 3 3 ns 11 access time from cas precharge t cpa 35 40 ns 3,11 fast page mode cycle time t pc 35 40 ns f...2 7 2 7 ns present detect read cycle ac characteristics (0 c t a 70 c, v cc =5.0v 10% . see n... |
| Description |
2M x 64 DRAM DIMM(2M x 64 动RAM模块)
|
| File Size |
366.80K /
19 Page |
View
it Online |
Download Datasheet |
| |
|
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| Part No. |
KMM366F1600BK2 KMM366F1680BK2
|
| OCR Text |
... ras to cas precharge time t rpc 5 5 ns access time from cas precharge t cpa 28 35 ns 3 hyper page mode cycle time t hpc 20 25 ns 11 hy...2. 3. 4. 5. 6. 7. 8. 9. 10. 11.
dram module kmm366f160(8)0bk2 ras v ih - v il - cas v ih - ... |
| Description |
16M x 64 DRAM DIMM(16M x 64 动RAM模块)
16M x 64 DRAM DIMM(16M x 64 ?ㄦ?RAM妯″?)
|
| File Size |
425.18K /
20 Page |
View
it Online |
Download Datasheet |
| |
|
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| Part No. |
KMM366F1600BK3 KMM366F1680BK3
|
| OCR Text |
... ras to cas precharge time t rpc 5 5 ns access time from cas precharge t cpa 28 35 ns 3 hyper page mode cycle time t hpc 25 30 ns 11 hy...2. 3. 4. 5. 6. 7. 8. 9. 10. 11.
dram module kmm366f160(8)0bk3 rev. 0.0 (nov. 1997) - 9 - ras v ih ... |
| Description |
16M x 64 DRAM DIMM(16M x 64 动RAM模块)
16M x 64 DRAM DIMM(16M x 64 ?ㄦ?RAM妯″?)
|
| File Size |
444.05K /
21 Page |
View
it Online |
Download Datasheet |
| |
|
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| Part No. |
KMM366F203CK KMM366F213CK
|
| OCR Text |
... ras to cas precharge time t rpc 5 5 ns 14 access time from cas precharge t cpa 28 35 ns 3,14 hyper page cycle time t hpc 20 25 ns 12 h...2.)
dram module kmm366f213ck kmm366f203ck notes an initial pause of 200us is required after power-... |
| Description |
2M x 64 DRAM DIMM(2M x 64 动RAM模块)
2M x 64 DRAM DIMM(2M x 64 ?ㄦ?RAM妯″?)
|
| File Size |
408.83K /
20 Page |
View
it Online |
Download Datasheet |
| |
|
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| Part No. |
KMM366F410CK1 KMM366F400CK1
|
| OCR Text |
... ras to cas precharge time t rpc 5 5 ns access time from cas precharge t cpa 28 35 ns 3 hyper page mode cycle time t hpc 25 30 ns 13 hy...2.0v and vol=0.8v. operation within the t rcd (max) limit insures that t rac (max) can be met. t ... |
| Description |
4M x 64 DRAM DIMM(4M x 64 动RAM模块)
|
| File Size |
384.74K /
20 Page |
View
it Online |
Download Datasheet |
| |
|
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| Part No. |
KMM372C1600BK
|
| OCR Text |
... ras to cas precharge time t rpc 3 3 ns 11 access time from cas precharge t cpa 35 40 ns 3,11 fast page mode cycle time t pc 35 40 ns f...2 7 2 7 ns present detect read cycle notes an initial pause of 200us is required after power-up foll... |
| Description |
16M x 72 DRAM DIMM(16M x 72 动RAM模块)
|
| File Size |
389.22K /
18 Page |
View
it Online |
Download Datasheet |
| |
|
|
ST Microelectronics
|
| Part No. |
L3234 L3235
|
| OCR Text |
...ac ac current feedback input. 8 rpc external protection resistors ac transmission compensation. 9 tx four wire transmitting amplifier output...2 wire line interface. note 1: agnd and bgnd pins must be tied together at a low impedance point (e.... |
| Description |
HIGLY INTEGRATED SLIC KIT TARGETED TO PABX AND KEY SYSTEM APPLICATIONS
|
| File Size |
4,940.29K /
26 Page |
View
it Online |
Download Datasheet |
| |
|
|
Oki Electric Industry Co., Ltd.
|
| Part No. |
MSC23V13258D-60BS2
|
| OCR Text |
...elay time from /ras precharge t rpc 5-5-5-ns /ras to /cas set-up time (/cas before /ras) t csr 5-5-5-ns /ras to /cas hold time (/cas before ...2. the ac characteristics assume t t = 2ns. 3. v ih (min.) and v il (max.) are reference levels for... |
| Description |
1M X 32 EDO DRAM MODULE, 60 ns, DMA100 DIMM-100
|
| File Size |
81.58K /
10 Page |
View
it Online |
Download Datasheet |
|
Price and Availability
|
