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ST Microelectronics
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| Part No. |
STTH8L06
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| OCR Text |
...Ultrafast switching Low reverse recovery current Low thermal resistance Reduces switching and conduction losses
K
A A NC
DESCRIPTION The STTH8L06, which is using ST Turbo2 600V technology, is specially suited as boost diode in discon... |
| Description |
TURBO 2 ULTRAFAST HIGH VOLTAGE RECTIFIER
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| File Size |
135.81K /
8 Page |
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it Online |
Download Datasheet
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ST Microelectronics
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| Part No. |
STTH812
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| OCR Text |
recovery - 1200 V diode
Main product characteristics
A K
IF(AV) VRRM Tj VF (typ) trr (typ)
8A 1200 V 175 C 1.25 V 50 ns
A K
TO-220AC STTH812D
A K
TO-220FPAC STTH812FP
Features and benefits
Ultrafast, soft recove... |
| Description |
Ultrafast recovery
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| File Size |
151.37K /
11 Page |
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it Online |
Download Datasheet |
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ST Microelectronics
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| Part No. |
STTH803D
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| OCR Text |
...S AND BENEFITS COMBINES HIGHEST recovery AND REVERSE VOLTAGE PERFORMANCE ULTRA-FAST, SOFT AND NOISE-FREE recovery DESCRIPTION Single Fast recovery Epitaxial Diode suited for Switch Mode Power Supply and high frequency DC/DC converters. Pack... |
| Description |
HIGH FREQUENCY SECONDARY RECTIFIER
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| File Size |
88.59K /
6 Page |
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it Online |
Download Datasheet |
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ST Microelectronics
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| Part No. |
STTH802C
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| OCR Text |
... losses Low forward and reverse recovery times High surge current capability High junction temperature Insulated package: TO-220FPAB
K A1
A2
A2 K A1
TO-220AB STTH802CT
K
TO-220FPAB STTH802CFP
DESCRIPTION Dual center tap r... |
| Description |
HIGH EFFICIENCY ULTRAFAST DIODE
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| File Size |
101.23K /
8 Page |
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it Online |
Download Datasheet |
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TOSHIBA
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| Part No. |
TK14C65W5
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| OCR Text |
...tures features (1) fast reverse recovery time: t rr = 100 ns (typ.) (2) low drain-source on-resistance: r ds(on) = 0.25 ? (typ.) by using super junction structure : dtmos (3) easy to control gate switching (4) enhancement mode: v th =... |
| Description |
Power MOSFET (N-ch 500V<VDSS≤700V)
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| File Size |
237.22K /
10 Page |
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it Online |
Download Datasheet |
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TOSHIBA
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| Part No. |
TK62N60W
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| OCR Text |
...s diode forward voltage reverse recovery time reverse recovery charge peak reverse recovery current diode dv/dt ruggedness symbol v dsf t rr q rr i rr dv/dt test condition i dr = 61.8 a, v gs = 0 v i dr = 30.9 a, v gs = 0 v -di dr /dt =... |
| Description |
Power MOSFET (N-ch 500V<VDSS≤700V)
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| File Size |
246.47K /
10 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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