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    PMKC03-05D05 PMKC03-05D12 PMKC03-05DS05 PMKC03-05D15 PMKC03-05DS15

Power Mate Technology Co., LTD
Power Mate Technology C...
Part No. PMKC03-05D05 PMKC03-05D12 PMKC03-05DS05 PMKC03-05D15 PMKC03-05DS15
OCR Text ...output ? standard 24 pin dip package & smd type package ? dual separate output ? ul60950-1, en60950-1, & iec60950-1 safety approvals ? ce marked ? compliant to rohs ii & reach options smd type description the...
Description 3 WATTS DC-DC CONVERTER

File Size 1,449.31K  /  3 Page

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    PBSS5360Z

NXP Semiconductors
Part No. PBSS5360Z
OCR Text ...ce-mounted device (smd) plastic package. npn complement: pbss4360z. 2. features and benefits ? low collector-emitter saturation voltage v cesat ? high collector current capability i c and i cm ? high energy efficiency due to less heat gene...
Description 60 V, 3 A PNP low VCEsat (BISS) transistor

File Size 254.73K  /  14 Page

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    NJG1151MD7

New Japan Radio
Part No. NJG1151MD7
OCR Text package outline the njg1151md7 is 2-way active splitter with normal ly loop through switch gaas mmic for stb/recorder/tv applic ations. in order to simplify the tuner structure, the njg11 51md7 does not only offer a 2-way active splitt...
Description 2-way Active Splitter GaAs MMIC

File Size 870.12K  /  30 Page

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Part No. W12059M
OCR Text package w12059m 44 pin tqfp solder down module atxmega16a4, atxmega32a4, atxmega64a4, atxmega128a4 w12060m 64 pin tqfp solder down module atxmega64a3, atxmega128a3, atxmega192a3, atxmega256a3 w12061sdf 100 pin tqfp interface modul...
Description TQFP44, IC SOCKET

File Size 73.49K  /  3 Page

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    TOSHIBA
Part No. TPCP8205-H
OCR Text ...otprint due to a small and thin package (2) high-speed switching (3) low drain-source on-resistance: r ds(on) = 20 m ? (typ.)(v gs = 10 v) (4) low leakage current: i dss = 10 a (max) (v ds = 30 v) (5) enhancement mode: v th = 1.3 to...
Description Power MOSFET (N-ch dual)

File Size 234.41K  /  9 Page

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    TOSHIBA
Part No. TPCA8058-H
OCR Text ...otprint due to a small and thin package (2) high-speed switching (3) small gate charge: q sw = 12 nc (typ.) (4) low drain-source on-resistance: r ds(on) = 3.0 m ? (typ.) (v gs = 4.5 v) (5) low leakage current: i dss = 10 a (max) (v d...
Description Power MOSFET (N-ch single VDSS≤30V)

File Size 232.91K  /  9 Page

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    TOSHIBA
Part No. TPC8066-H
OCR Text ...atures features (1) small, thin package (2) high-speed switching (3) small gate charge: q sw = 3.2 nc (typ.) (4) low drain-source on-resistance: r ds(on) = 15 m ? (typ.) (v gs = 4.5 v) (5) low leakage current: i dss = 10 a (max) (v d...
Description Power MOSFET (N-ch single VDSS≤30V)

File Size 249.47K  /  9 Page

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    TOSHIBA
Part No. TPC8058-H
OCR Text ...otprint due to a small and thin package (2) high-speed switching (3) small gate change: q sw = 12 nc (typ.) (4) low drain-source on-resistance: r ds(on) = 3.2 m ? (typ.) (v gs = 4.5 v) (5) low leakage current: i dss = 10 a (max) (v d...
Description Power MOSFET (N-ch single VDSS≤30V)

File Size 226.14K  /  9 Page

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