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    2SB1002

HITACHI[Hitachi Semiconductor]
Hitachi,Ltd.
Part No. 2SB1002
OCR Text ...mbol V(BR)CBO V(BR)CEO V(BR)EBO I CBO I EBO hFE* 1 Min -70 -50 -6 -- -- 100 -- -- -- -- Typ -- -- -- -- -- -- -- -- 150 35 Max -- -- -- -0.1 -0.1 320 -0.6 -1.2 -- -- Unit V V V A A Test conditions I C = -10 A, IE = 0 I C = -...
Description Silicon PNP Transistor
Silicon PNP Epitaxial

File Size 30.84K  /  6 Page

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    2SB1011 B1011

PANASONIC[Panasonic Semiconductor]
Part No. 2SB1011 B1011
OCR Text ... hFE IC 240 VCE=-5V fT I E 120 VCB=-30V f=200MHz TC=25C Forward current transfer ratio hFE -10 Ta=75C 160 Transiti...V) Collector-emitter voltage VCE (V) 2 SJD00036BED 2SB1011 Rth t 104 free air Ther...
Description 2SB1011
Silicon PNP triple diffusion planar type

File Size 77.42K  /  4 Page

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    2SB1012 2SB1012K 2SB1012_K

HITACHI[Hitachi Semiconductor]
Part No. 2SB1012 2SB1012K 2SB1012_K
OCR Text ... = 25C Symbol VCBO VCEO VEBO IC I C(peak) PC * Tj Tstg ID* 1 1 Rating -120 -120 -7 -1.5 -3.0 20 150 -55 to +150 1.5 Unit V V V A A W C C A Electrical Characteristics (Ta = 25C) Item Symbol Min -120 -7 -- -- 2000 -- -- -- -- -- --...
Description Silicon PNP Epitaxial

File Size 32.59K  /  6 Page

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    2SB1025

Hitachi Semiconductor
Part No. 2SB1025
OCR Text ...mbol V(BR)CBO V(BR)CEO V(BR)EBO I CBO hFE1* hFE2 Collector to emitter saturation voltage Base to emitter voltage Gain bandwidth product Collector output capacitance Note: Mark hFE1 VCE(sat) VBE fT Cob 1 Min -120 -80 -5 -- 60 30 -- -- --...
Description Silicon PNP Epitaxial

File Size 32.26K  /  6 Page

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    2SB1026

HITACHI[Hitachi Semiconductor]
Part No. 2SB1026
OCR Text ...mbol V(BR)CBO V(BR)CEO V(BR)EBO I CBO hFE1* hFE2 Collector to emitter saturation voltage Base to emitter voltage Gain bandwidth product Collector output capacitance Note: Mark hFE1 VCE(sat) VBE fT Cob 1 Min -120 -100 -5 -- 60 30 -- -- -...
Description Silicon PNP Epitaxial

File Size 24.16K  /  5 Page

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    2SB1027

HITACHI[Hitachi Semiconductor]
Part No. 2SB1027
OCR Text ...mbol V(BR)CBO V(BR)CEO V(BR)EBO I CBO hFE1* hFE2 Collector to emitter saturation voltage Base to emitter voltage Note: Mark hFE1 VCE(sat) VBE 1 Min -180 -120 -5 -- 60 30 -- -- Typ -- -- -- -- -- -- -- -- Max -- -- -- -10 320 -- -1...
Description Silicon PNP Transistor
Silicon PNP Epitaxial

File Size 29.73K  /  6 Page

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    2SB1028

HITACHI[Hitachi Semiconductor]
Part No. 2SB1028
OCR Text ...mbol V(BR)CBO V(BR)CEO V(BR)EBO I CBO hFE1* hFE2 Collector to emitter saturation voltage Base to emitter voltage Note: Mark hFE1 VCE(sat) VBE 1 Min -180 -160 -5 -- 60 30 -- -- Typ -- -- -- -- -- -- -- -- Max -- -- -- -10 200 -- -1...
Description Silicon PNP Epitaxial

File Size 30.14K  /  6 Page

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    2SB1030 2SB1030A

PANASONIC[Panasonic Semiconductor]
Part No. 2SB1030 2SB1030A
OCR Text ...FE -- IC 160 VCE=-10V fT -- I E VCB=-10V Ta=25C Forward current transfer ratio hFE 500 Transition frequency fT (MHz) -1 -3 -1...V) Collector current IC (A) 2 ...
Description Silicon PNP epitaxial planer type(For low-frequency amplification)

File Size 37.06K  /  2 Page

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    2SB1032 2SB1032K

HITACHI[Hitachi Semiconductor]
Part No. 2SB1032 2SB1032K
OCR Text ... = 25C Symbol VCBO VCEO VEBO IC I C(peak) ID* 1 1 Rating -120 -120 -7 -10 -15 10 80 150 -55 to +150 Unit V V V A A A W C C PC * Tj Tstg Electrical Characteristics (Ta = 25C) Item Symbol Min -120 -7 -- -- 1000 -- -- -- -- --...
Description Silicon PNP Triple Diffused

File Size 35.68K  /  6 Page

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    2SB1036

PANASONIC[Panasonic Semiconductor]
Part No. 2SB1036
OCR Text ...hFE -- IC 160 VCE=-5V fT -- I E VCB=-5V Ta=25C Forward current transfer ratio hFE Transition frequency fT (MHz) -10 -30 -100 ...V) Collector current IC (mA) 2 ...
Description Silicon PNP epitaxial planer type(For low-frequency and low-noise amplification)

File Size 36.41K  /  2 Page

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