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  gp-ib Datasheet PDF File

For gp-ib Found Datasheets File :: 432    Search Time::1.141ms    
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    ULN2069LB ULN2069B

Allegro MicroSystems
Part No. ULN2069LB ULN2069B
OCR Text ... TEMPERATURE IN C 125 150 Dwg. GP-049-3 TEST FIGURES OPEN OPEN VCE OPEN OPEN A OPEN ICEX IIN VIN V VCE IC IB V VCE mA OPEN IC VIN Dwg. No. A-9729A Dwg. No. A-10,350 Dwg. No. A-10,349 Dwg. N...
Description QUAD1.5ADARLINGTONSWITCHES

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    2064 ULN2064LB ULN2065B ULN2065LB ULN2068B ULN2068LB ULN2069LB ULN2064B ULN2069B

Allegro MicroSystems, Inc.
ALLEGRO[Allegro MicroSystems]
STMicroelectronics
Part No. 2064 ULN2064LB ULN2065B ULN2065LB ULN2068B ULN2068LB ULN2069LB ULN2064B ULN2069B
OCR Text ... TEMPERATURE IN C 125 150 Dwg. GP-049-3 TEST FIGURES OPEN OPEN VCE OPEN OPEN A OPEN ICEX IIN VIN V VCE IC IB V VCE mA OPEN IC VIN Dwg. No. A-9729A Dwg. No. A-10,350 Dwg. No. A-10,349 Dwg. N...
Description QUAD 1.5 A DARLINGTON SWITCHES
QUAD1.5ADARLINGTONSWITCHES

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    ALLEGRO[Allegro MicroSystems]
Part No. ULX2803 ULX2804X ULN2804A ULN2804LW ULN2823A ULN2823LW ULN2824A ULN2824LW ULX2803X ULN2803A
OCR Text ...7.2 K 3K Dwg. FP-052-3 Dwg. GP-018B x = Character to identify specific device. Specification shown applies to family of devices with ...IB = 250 A lC = 200 mA, IB = 350 A IC = 350 mA, IB = 500 A Input Current IIN(ON) 3 ULx2803x ULx2804x...
Description 0.5 A, 50 V, 8 CHANNEL, NPN, Si, POWER TRANSISTOR, MS-001AC
High Voltage High Current Darlington Arrays

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    MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. M62216GP M62216FP M62216E
OCR Text GP Low Voltage Operation STEP-UP DC-DC Converter DESCRIPTION The M62216FP is designed as low voltage operation STEP-UP DC-DC converter....IB=850A typ. * Pre-Drive output current can be adjusted * Built-in ON/OFF Function * * * * * * * * *...
Description From old datasheet system
Low Voltage Operation STEP-UP DC-DC Converter

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    Allegro
Part No. 2024
OCR Text ...TEMPERATURE IN C 150 Dwg. GP-006A Dwg. No. A-9898A X = Digit to identify specific device. Specification shown applies to family ...IB = 250 A lC = 200 mA, IB = 350 A IC = 350 mA, IB = 500 A Input Current IIN(ON) 3 ULN2003A/L ULN200...
Description HIGH-VOLTAGE, HIGH-CURRENT DARLINGTON ARRAYS

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    panasonic
Part No. 2SC1047
OCR Text ...Symbol VCBO VEBO VBE hFE Cre fT GP NF Conditions IC = 10 A, IE = 0 IE = 10 A, IC = 0 VCE = 6 V, IC = 1 mA VCE = 6 V, IC = 1 mA VCB = 6 V, IE...IB = 100 A 80 A 60 A 6 40 A IC I B 12 Ta = 25C VCE = 10 V 6V Collector power dissipation PC ...
Description TO-92-A1
From old datasheet system

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    ALLEGRO[Allegro MicroSystems]
Allegro MicroSystems, Inc.
Part No. ULN2823A ULN2803LW ULN2804LW ULS2803 ULN2803A 2803 ULN2823LW ULN2824A ULN2824LW ULN2804A ULQ2803LW ULN2804 ULQ2803A ULQ2804LW ULQ2823A ULQ2804A ULQ2824A
OCR Text ... C 150 7.2K 3K Dwg. GP-018B Dwg. No. A-9898A x = Character to identify specific device. Specification shown applies to fam...IB = 250 A lC = 200 mA, IB = 350 A IC = 350 mA, IB = 500 A Input Current IIN(ON) 3 ULx2803x ULx2804x...
Description HIGH-VOLTAGE / HIGH-CURRENT DARLINGTON ARRAYS
HIGH-VOLTAGE, HIGH-CURRENT DARLINGTON ARRAYS
HIGH-VOLTAGE HIGH-CURRENT DARLINGTON ARRAYS
HIGH-VOLTAGE/ HIGH-CURRENT DARLINGTON ARRAYS

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    Panasonic
Part No. 2SA0838 2SA838
OCR Text ... E 600 VCB = -10 V Ta = 25C GP IC 24 VCE = -10 V f = 100 MHz Ta = 25C 5 NF IE VCB = -10 V f = 100 MHz Ta = 25C Transition frequency fT (MHz) 500 20 4 400 16 Noise figure NF (dB) -1 -10 -100 Power gain GP ...
Description Small-signal device - Small-signal transistor - High-Frequency Amplifiers and Others

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    SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
Part No. Q62702-F659 BFQ29 BFQ29P
OCR Text ... Noise Parameters f GHz Fmin dB Gp(Fmin) dB MAG opt ANG RN N - F50 dB Gp(F50) dB IC = 3 mA, VCE = 6 V, Z0 = 50 0.01 0.85 - (ZS = 130 ) - - 1.2 - IC = 5 mA, VCE = 6 V, Z0 = 50 0.01 0.8 0.85 1.25 - 13 (ZS = 100 ) 0.25 93.5 - 11.1 - ...
Description From old datasheet system
NPN Silicon RF Transistor (For low-noise IF and broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA.)

File Size 227.23K  /  10 Page

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    BFR93P Q62702-F1051

SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Part No. BFR93P Q62702-F1051
OCR Text ... Noise Parameters f GHz Fmin dB Gp(Fmin) dB MAG opt ANG RN N - F50 dB Gp(F50) dB IC = 2 mA, VCE = 8 V, Z0 = 50 0.01 1.0 - (ZS = 150 ) - - 1.6 - IC = 10 mA, VCE = 8 V, Z0 = 50 0.01 0.8 1.5 2.3 - - (ZS = 90 ) (ZS = ZSopt) - - - - 1....
Description NPN Silicon RF Transistor (For low-distortion broadband amplifiers up to 1 GHz at collector currents from 2 mA to 30 mA.)
From old datasheet system

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For gp-ib Found Datasheets File :: 432    Search Time::1.141ms    
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