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				SANKEN[Sanken electric]
Part No.	2SC5002
OCR Text	... (s) 0.2max 1.5 B C E Weight : Approx 6.5g a. Type No. b. Lot No. I C - VCE Characteristics (Typical) Collector-Emitter S...n P C (W) 10 5 60 W ith In fin ite he 5 40 at si nk 1 Without Heatsink Natural ...
Description	Silicon NPN Triple Diffused Planar Transistor(Display Horizontal Deflection Output, Switching Regulator and General Purpose) Silicon NPN Triple Diffused Planar Transistor(Display Horizontal Deflection Output/ Switching Regulator and General Purpose)
File Size	23.63K / 1 Page	View it Online	Download Datasheet

				PANASONIC[Panasonic Semiconductor]
Part No.	2SC5063
OCR Text	...de area of safe operation (ASO) N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. (TC=25C) Ratings 500 500 400 7 3 1.5 0.5 25 1.3 150 -55 to +150 Unit V 10.5m...
Description	Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)
File Size	60.70K / 3 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	2SD1126 2SD1126K
OCR Text	...rature Storage temperature C to E diode forward current Note: 1. Value at TC = 25C. Symbol VCBO VCEO VEBO IC I C(peak) PC * Tj Tstg ID 1 ...n m s 1 tio m ra pe O = 40 10 D 1.0 0.3 0.1 0.03 TC = 25C C 20 0 50 100 C...
Description	Silicon NPN Triple Diffused
File Size	32.50K / 6 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	2SD1133 2SD1134
OCR Text	...A, IE = 0 I C = 50 mA, RBE = I E = 10 A, IC = 0 VCB = 50 V, IE = 0 VCE = 4V I C = 1 A2 I C = 0.1 A2 I C = 2 A, IB = 0.2 A*2 VCE = 4 V, IC...n 20 0.2 0.1 0 50 100 Case temperature TC (C) 150 1 2 5 10 20 50 100 Collector ...
Description	Silicon NPN Triple Diffused
File Size	32.05K / 5 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	2SD1138
OCR Text	...onditions I C = 50 mA, RBE = I E = 5 mA, IC = 0 VCB = 120 V, IE = 0 VCE = 4 V, IC = 50 mA VCE = 10 V, IC = 500 mA2 I C = 500 mA, IB = 50 mA2 VCB = 4 V, IC = 50 mA VCB = 100 V, IE = 0, f = 1 MHz Collector to emitter breakdown V(BR)CEO ...
Description	Silicon NPN Transistor Silicon NPN Triple Diffused
File Size	30.91K / 6 Page	View it Online	Download Datasheet

				PANASONIC[Panasonic Semiconductor]
Part No.	2SD620 2SK620
OCR Text	N-Channel MOS FET For switching 2.8 -0.3 +0.2 unit: mm 0.650.15 s Features q High-speed switching q Mini-type package, allowing downsizing of the sets and automatic insertion through the tape/magazine packing. 0.650.15 1.5 ...
Description	Silicon N-Channel MOS FET
File Size	35.23K / 2 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	2SD768 2SD768K
OCR Text	...onditions I C = 25 mA, RBE = I E = 50 mA, IC = 0 VCB = 120 V, IE = 0 VCE = 100 V, RBE= VCE = 3 V, IC = 3 A1 I C = 3 A, IB = 6 mA1 I C = 6A, IB = 60 mA1 I C = 3 A, IB = 6 mA1 I C = 6 A, IB = 60 mA*1 I C = 3 A, IB1 = -IB2 = 6 mA I C = 3 ...
Description	Silicon NPN Epitaxial
File Size	35.66K / 6 Page	View it Online	Download Datasheet

				Unisonic Technologies
Part No.	2SD882S UTC2SD882S
OCR Text	... RANK RANGE Q 100-200 P 160-320 E 200-400 UTC UNISONIC TECHNOLOGIES CO. LTD 1 QW-R201-024,A UTC 2SD882S Fig.1 Static character...n tio 0.4 lim d ite 0 0 4 8 12 16 20 0 -50 0 50 100 0 -50 0 50 100 150 200 -Collec...
Description	NPN EPITAXIAL SILICON TRANSISTOR
File Size	73.22K / 2 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	2SD970 2SD970K
OCR Text	...onditions I C = 25 mA, RBE = I E = 50 mA, IC = 0 VCB = 120 V, IE = 0 VCE = 100 V, RBE = VCE = 3 V, IC = 4 A1 I C = 4 A, IB = 8 mA1 I C = 8 A, IB = 80 mA1 I C = 4 A, IB = 8 mA1 I C = 8 A, IB = 80 mA*1 I C = 4 A, IB1 = -IB2 = 8 mA Colle...
Description	Silicon NPN Triple Diffused
File Size	36.11K / 6 Page	View it Online	Download Datasheet

				FUJI ELECTRIC HOLDINGS CO., LTD. FUJI[Fuji Electric]
Part No.	2SK2764-01R
OCR Text	...bol V DS ID I D(puls) V GS I AR E AS PD T ch T stg Rating 800 4 16 30 4 254 80 150 -55 ~ +150 Unit V A A V A mJ W C C > Equivalent Circui...N-channel MOS-FET 800V 4 2SK2764-01R FAP-IIS Series Drain-Source On-State Resistance vs. Tc...
Description	N-channel MOS-FET
File Size	292.33K / 2 Page	View it Online	Download Datasheet

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