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For dson Found Datasheets File :: 1985 Search Time::1.328ms
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				NXP Semiconductors
Part No.	PSMN5R0-100ES
OCR Text	... 175 c static characteristics r dson drain-source on-state resistance v gs =10v; i d =25a; t j = 100 c; see figure 12 ; see figure 13 -7.79m ? v gs =10v; i d =25a; t j =25c; see figure 13 [2] -4.35m ? dynamic characteristics q gd gat...
Description	N-channel MOSFET
File Size	277.96K / 15 Page	View it Online	Download Datasheet

				NXP Semiconductors
Part No.	PSMN3R3-60PL
OCR Text	... 293 w static characteristics r dson drain-source on-state resistance v gs = 10 v; i d = 25 a; t j = 25 c; fig. 11 - 2.7 3.4 m dynamic characteristics q g(tot) total gate charge - 175 - nc q gd gate-drain charge v gs = 10 v; i d = 25 a...
Description	N-channel 60 V, 3.4 mlogic level MOSFET in SOT78 N-channel 60 V, 3.4 mΩ logic level MOSFET in SOT78
File Size	255.63K / 13 Page	View it Online	Download Datasheet

				NXP Semiconductors N.V.
Part No.	BUK7506-75B
OCR Text	...--300w static characteristics r dson drain-source on-state resistance v gs =10v; i d =25a; t j =25c; see figure 11 ; see figure 12 -4.85.6m ? buk7506-75b all information provided in this document is subject to legal disclaimers. ? nx...
Description	N-channel TrenchMOS standard level FET N沟道TrenchMOS标准电平场效应管
File Size	183.87K / 13 Page	View it Online	Download Datasheet

				NXP Semiconductors N.V.
Part No.	BUK7506-55B
OCR Text	...--254w static characteristics r dson drain-source on-state resistance v gs =10v; i d =25a; t j =25c; see figure 11 ; see figure 12 -5.16m ? avalanche ruggedness e ds(al)s non-repetitive drain-source avalanche energy i d =75a; v sup ...
Description	N-channel TrenchMOS standard level FET N沟道TrenchMOS标准电平场效应管
File Size	156.86K / 14 Page	View it Online	Download Datasheet

				NXP Semiconductors
Part No.	PSMN3R3-80ES PSMN3R3-80ES-15
OCR Text	... 175 c static characteristics r dson drain-source on-state resistance v gs =10v; i d =25a; t j =100c; see figure 12 -4.65.4m ? v gs =10v; i d =25a; t j =25c; see figure 13 [2] -2.83.3m ? dynamic characteristics q gd gate-drain charge v...
Description	N-channel 80 V, 3.3 mΩ standard level MOSFET in I2PAK N-channel 80 V, 3.3 m standard level MOSFET in I2PAK
File Size	195.24K / 14 Page	View it Online	Download Datasheet

				NXP Semiconductors
Part No.	PSMN3R3-80PS PSMN3R3-80PS-15
OCR Text	... 175 c static characteristics r dson drain-source on-state resistance v gs =10v; i d =25a; t j =100c; see figure 12 -4.65.4m ? v gs =10v; i d =25a; t j =25c; see figure 13 [2] -2.83.3m ? dynamic characteristics q gd gate-drain charge v...
Description	N-channel 80 V, 3.3 mΩ standard level MOSFET in TO-220 N-channel 80 V, 3.3 m standard level MOSFET in TO-220
File Size	203.88K / 15 Page	View it Online	Download Datasheet

				Cystech Electonics Corp.
Part No.	MTC8402S6R
OCR Text	...0v -50v i d 0.3a -0.18a r dson (typ.) @v gs =(-)10v 1.6 5 r dson (typ.) @v gs =(-)5v 0.8 6 cystech electronics corp. spec. no. : c888s6r issued date : 2012.12.24 revised date : page no. : 2/ 12 mtc8402s6r ...
Description	N- AND P-Channel Logic Level Enhancement Mode MOSFET
File Size	293.77K / 12 Page	View it Online	Download Datasheet

				Advanced Power Technology
Part No.	APTM50HM75SCT
OCR Text	...te - source voltage 30 v r dson drain - source on resistance 75 m p d maximum power dissipation t c = 25c 357 w i ar avalanche current (repetitive and non repetitive) 46 a e ar repetitive avalanche energy ...
Description	MOSFET Power Module
File Size	350.28K / 7 Page	View it Online	Download Datasheet

				Microsemi Corporation
Part No.	APTM50HM35FG
OCR Text	...te - source voltage 30 v r dson drain - source on resistance 39 m ? p d maximum power dissipation t c = 25c 781 w i ar avalanche current (repetitive and non repetitive) 51 a e ar repetitive avalanche energy ...
Description	Full - Bridge MOSFET Power Module
File Size	285.24K / 6 Page	View it Online	Download Datasheet

For dson Found Datasheets File :: 1985 Search Time::1.328ms
Page :: | 1 | 2 | 3 | 4 | <5> | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |