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doherty Datasheet PDF File

For doherty Found Datasheets File :: 137 Search Time::1.063ms
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				NXP Semiconductors
Part No.	BLF7G22L-130 BLF7G22LS-130
OCR Text	...nce for improved performance in doherty applications Designed for low memory effects providing excellent digital pre-distortion capability Internally matched for ease of use Integrated ESD protection Compliant to Directive 2002/95/EC, regar...
Description	Power LDMOS transistor
File Size	159.42K / 15 Page	View it Online	Download Datasheet

				Freescale Semiconductor
Part No.	MRF8S19140HR3 MRF8S19140HSR3
OCR Text	...rection Systems * Optimized for doherty Applications * RoHS Compliant * In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. Table 1. Maximum Ratings Rating Drain--Source Voltage Gate--Source Voltage Operating Voltage Storage T...
Description	RF Power Field Effect Transistors
File Size	434.09K / 14 Page	View it Online	Download Datasheet

				Motorola Semiconductor
Part No.	MRF8S26060HR3 MRF8S26060HSR3
OCR Text	...rection Systems * Optimized for doherty Applications * RoHS Compliant * In Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 inch Reel. Table 1. Maximum Ratings Rating Drain-Source Voltage Gate-Source Voltage Operating Voltage Storage Tem...
Description	RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
File Size	252.30K / 14 Page	View it Online	Download Datasheet

				Motorola
Part No.	MRF8S26120HR3 MRF8S26120HSR3
OCR Text	...rection Systems * Optimized for doherty Applications * RoHS Compliant * In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. Table 1. Maximum Ratings Rating Drain--Source Voltage Gate--Source Voltage Operating Voltage Storage T...
Description	RF Power Field Effect Transistor
File Size	533.04K / 15 Page	View it Online	Download Datasheet

				Motorola
Part No.	MRF8S7120NR3
OCR Text	...rection Systems * Optimized for doherty Applications * 225C Capable Plastic Package * RoHS Compliant * In Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 inch Reel. Table 1. Maximum Ratings Rating Drain--Source Voltage Gate--Source Volt...
Description	RF Power Field Effect Transistor
File Size	461.20K / 13 Page	View it Online	Download Datasheet

				Freescale Semiconductor, Inc
Part No.	MRFE6S9205HR3 MRFE6S9205HSR3
OCR Text	... ESD Protection * Optimized for doherty Applications * RoHS Compliant * In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. MRFE6S9205HR3 MRFE6S9205HSR3 880 MHz, 58 W AVG., 28 V SINGLE W - CDMA LATERAL N - CHANNEL RF POWER ...
Description	RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
File Size	401.66K / 12 Page	View it Online	Download Datasheet

				Freescale Semiconductor, Inc
Part No.	MRF8S23120H MRF8S23120HR3 MRF8S23120HSR3
OCR Text	...rection Systems * Optimized for doherty Applications * RoHS Compliant * In Tape and Reel. R3 Suffix = 250 Units, 56 mm Tape Width, 13 inch Reel. Table 1. Maximum Ratings Rating Drain--Source Voltage Gate--Source Voltage Operating Voltage S...
Description	RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs
File Size	442.18K / 14 Page	View it Online	Download Datasheet

				Freescale Semiconductor, Inc
Part No.	MRF8S18120HR310 MRF8S18120HSR3
OCR Text	...ass C Operation * Optimized for doherty Applications * RoHS Compliant * In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. Table 1. Maximum Ratings Rating Drain--Source Voltage Gate--Source Voltage Operating Voltage Storage T...
Description	RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs
File Size	407.14K / 14 Page	View it Online	Download Datasheet

				RFHIC
Part No.	RTP26020-S0
OCR Text	doherty amplifier design * GaN on SiC HEMT * Small and light weight * 50 Ohm Input/Output impedance matched * Highly reliable and rugged design * High efficiency, High Gain * 16W typical PAVG RTP26020-S0 Application * WiMAX DPD amplifi...
Description	GaN-SiC Pallet Amplifier
File Size	309.50K / 3 Page	View it Online	Download Datasheet

				RFHIC
Part No.	RTP26020-10
OCR Text	doherty amplifier design * GaN on SiC HEMT * Small and light weight * 50 Ohm Input/Output impedance matched * Highly reliable and rugged design * High efficiency * 16W typical PAVG RTP26020-10 Application * WiMAX DPD amplifier * Genera...
Description	GaN-SiC Pallet Amplifier
File Size	104.81K / 2 Page	View it Online	Download Datasheet

For doherty Found Datasheets File :: 137 Search Time::1.063ms
Page :: | 1 | 2 | 3 | 4 | <5> | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 |