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ANACHIP[Anachip Corp]
ETC[ETC]
复位半导
NEC, Corp.
Kingbright, Corp.
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| Part No. |
AP1702 AP1702AW AP1702AWL AP1702BW AP1702BWL AP1702CW AP1702CWL AP1702DW AP1702DWL AP1702EW AP1702EWL AP1702FW AP1702FWL AP1701 AP1701AW AP1701AWL AP1701BW AP1701BWL AP1701CW AP1701CWL AP1701DW AP1701DWL AP1701EW AP1701EWL AP1701FW AP1701FWL AP1703 AP1703AW AP1703BW AP1703BWL AP1703CW AP1703CWL AP1703DW AP1703DWL AP1703EW AP1704FWL AP1704FW AP1704EWL AP1704EW AP1704DWL AP1704DW AP1704CWL AP1704CW AP1704BWL AP1704BW AP1703AWL AP1703EWL AP1703FW AP1703FWL AP1704 AP1704AW AP1704AWL AP1702DWA AP1702EWA AP1701EWA AP1703EWA AP1704EWA AP1701FWA AP1701BWA AP1702BWA AP1703BWA AP1704BWA AP1702AWA AP1701DWA AP1704CWA
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| Description |
4.63 V, 3-pin microprocessor reset circuit
4.38 V, 3-pin microprocessor reset circuit
3.08 V, 3-pin microprocessor reset circuit
TRANSISTOR, JFET N TO-18
RECTIFIER SBR SINGLE 2A 30V 75A-ifsm 0.45Vf 0.2mA-ir PowerDI-123 3K/REEL
JFET; Transistor Polarity:N Channel; Breakdown Voltage, V(br)gss:-25V; Zero Gate Voltage Drain Current Min, Idss:12mA; Zero Gate Voltage Drain Current Max, Idss:30mA; Gate-Source cutoff Voltage Max, Vgs(off):-4V; Package/Case:TO-78
3-Pin Microprocessor Reset Circuits 3引脚微处理器复位电路
JFET; Transistor Polarity:Dual N Channel; Breakdown Voltage, V(br)gss:-25V; Zero Gate Voltage Drain Current Min, Idss:12mA; Zero Gate Voltage Drain Current Max, Idss:30mA; Gate-Source cutoff Voltage Max, Vgs(off):-4V 3引脚微处理器复位电路
2.93 V, 3-pin microprocessor reset circuit
2.63 V, 3-pin microprocessor reset circuit
4.00 V, 3-pin microprocessor reset circuit
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| File Size |
163.05K /
8 Page |
 View
it Online |
Download Datasheet
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INTERSIL[Intersil Corporation]
Intersil, Corp.
HARRIS SEMICONDUCTOR
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| Part No. |
HCS05DMSR FN3557 HCS05MS HCS05D HCS05HMSR HCS05K HCS05KMSR
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| Description |
Inverter, Hex, Open Drain, Rad-Hard, High-Speed, CMOS, Logic
From old datasheet system
JFET-N-CHANNEL SWITCH
Radiation Hardened Hex Inverter with Open Drain HC/UH SERIES, HEX 1-INPUT INVERT GATE, UUC14
JFET; Transistor Polarity:N Channel; Breakdown Voltage, V(br)gss:-30V; Zero Gate Voltage Drain Current Min, Idss:50mA; Gate-Source cutoff Voltage Max, Vgs(off):-10V; Current Rating:50mA; Voltage Rating:30V
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| File Size |
106.16K /
7 Page |
View
it Online |
Download Datasheet |
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VICOR[Vicor Corporation]
DC/DC变换
Vicor, Corp.
Analog Devices, Inc.
Maxim Integrated Products, Inc.
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| Part No. |
MI-J21-IA MI-J21-IZ MI-J21-MZ MI-J7N-IZ MI-J7N-MY MI-J2L-MY MI-J22-MA MI-J20-MA MI-J20-MY MI-J20-MZ MI-J2M-IA MI-J2M-IY MI-J2M-IZ MI-J2L-MA MI-J2L-MZ MI-J22-MY MI-J22-MZ MI-J51-MA MI-J51-MY MI-J51-MZ MI-J7Z-MZ MI-J00 MI-J20-IA MI-J20-IY MI-J20-IZ MI-J21-IY MI-J21-MA MI-J21-MY MI-J22-IA MI-J22-IY MI-J22-IZ MI-J23-IA MI-J23-IY MI-J23-IZ MI-J23-MA MI-J23-MY MI-J23-MZ MI-J24-IA MI-J24-IY MI-J24-IZ MI-J24-MA MI-J24-MY MI-J24-MZ MI-J2J-IA MI-J2J-IY MI-J2J-IZ MI-J2J-MA MI-J2J-MY MI-J2J-MZ MI-J2K-IA MI-J2K-IY MI-J2K-IZ MI-J2K-MA MI-J2K-MY MI-J2K-MZ MI-J2L-IA MI-J2L-IY MI-J2L-IZ MI-J2M-MA MI-J2M-MY MI-J2M-MZ MI-J2N-IA MI-J2N-IY MI-J2N-IZ MI-J2N-MA MI-J2N-MY MI-J2N-MZ MI-J2P-IA MI-J2P-IY MI-J2P-IZ MI-J2P-MA MI-J2P-MY MI-J2P-MZ MI-J2R-IA MI-J2R-IY MI-J2R-IZ MI-J2R-MA MI-J2R-MY MI-J2R-MZ MI-J2T-IA MI-J2T-IY MI-J2T-IZ MI-J2T-MA MI-J2T-MY MI-J2T-MZ MI-J2V-IA MI-J2V-IY MI-J2V-IZ MI-J2V-MA MI-J2V-MY MI-J2V-MZ MI-J2W-IA MI-J2W-IY MI-J2W-IZ MI-J2W-MA MI-J2W-MY MI-J2W-MZ MI-J2X-IA MI-J2X-IY MI-J2X-IZ MI-J2X-MA MI-J2X-MY MI-J2X-MZ MI-J2Y-IA MI-J2Y-IY MI-J2Y-IZ MI-J2Y-MA MI-J2Y-MY MI-J2Y-MZ MI-J2Z-IA MI-J2Z-IY MI-J2Z-IZ MI-J2Z-MA MI-J2Z-MY MI-J2Z-MZ MI-J50-IA MI-J50-IY MI-J50-IZ MI-J50-MA MI-J50-MY MI-
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| Description |
RES,Wirewound,2KOhms,65WV,5 /-% Tol
GT 8C 8#16 SKT RECP WALL
RESISTOR SILICONE 12 OHM 10W
RESISTOR SILICONE 15 OHM 10W
XCR3032XL-10VQG44I
Flash 16Mb PROM (ST Micro),
Flash 32Mb PROM (ST Micro),
Bar Graph Display; Display Technology:LED; Package/Case:20-DIP; Color:High Efficiency Red; Forward Voltage:2.2V; Light Emitting Area:10 segments
Bar Graph Display; Display Technology:LED; Package/Case:20-DIP; Color:High Efficiency Red; Forward Voltage:2.0V; Light Emitting Area:10 segments
Gate / Inverter Logic IC; Logic Type:Dual 4-Input NOR Gate; Logic Family:4000; Logic Base Number:4002; Package/Case:14-DIP
BACKSHELL DB37 METALIZED PLASTIC
Replaced by PTN78000A,PTN04050C :
FLUKE-117 CALIBRATED BY NEWARK INONE SERVICES
HVAC Digital Multimeter and Infrared Thermometer Combo Kit; RoHS Compliant: NA
Bipolar Transistor; Collector Emitter Voltage, Vceo:800V; Transistor Polarity:NPN; Power Dissipation:70W; C-E Breakdown Voltage:1500V; DC Current Gain Min (hfe):5; Collector Current:8A; Package/Case:3-TO-3PML
RESISTOR WIREWOUND 390 OHM 10W
RF/Coaxial Connector; RF Coax Type:SMA; Contact Termination:Crimp; Body Style:Right Angle Plug; RG Cable Type:58, 58A, 58C, 141, 303, LMR195, Belden 7806A RoHS Compliant: Yes
RESISTOR WIREWOUND 35 OHM 10W
T-PNP-SI QUAD GEN PURPOSE
T-NPN-SI-QUAD GEN PURP
Amplifier, Other
Bipolar Transistor; Current Rating:150mA; Voltage Rating:24V
KPT 3C 3#20 SKT RECP
D-SI 70PRV .1A
Gate Logic IC; Logic Type:Gate; Logic Family:4000; Logic Base Number:4001; Package/Case:14-DIP; Number of Circuits:4; Mounting Type:Through Hole RoHS Compliant: Yes
Darlington Bipolar Transistor; Mounting Type:Through Hole; Package/Case:TO-3; Current Rating:12A; Voltage Rating:100V RoHS Compliant: Yes
Darlington Bipolar Transistor; Package/Case:TO-3; Mounting Type:Through Hole; Current Rating:12A; Voltage Rating:100V
Thyristor; Current Rating:8A; Mounting Type:Through Hole; Package/Case:TO-64; Current, It av:8A; Repetitive Reverse Voltage Max, Vrrm:400V; Voltage Rating:400V
Bipolar Transistor; Transistor Polarity:N Channel; C-E Breakdown Voltage:850V; DC Current Gain Min (hfe):5; Collector Current:15A; Package/Case:TO-3; Voltage Rating:450V
Small Signal Bipolar Transistor; Collector Emitter Voltage, Vceo:80V; Transistor Polarity:N Channel; Power Dissipation:0.8W; C-E Breakdown Voltage:80V; DC Current Gain Min (hfe):15; Collector Current:1A; Package/Case:TO-39
Bipolar Transistor; Transistor Polarity:PNP; Power Dissipation:5W; C-E Breakdown Voltage:320V; DC Current Gain Min (hfe):15; Collector Current:10A
IC; Package/Case:12-lead quad in-line
T-NPN-SI GEN PURP AMP
Bipolar Transistor; Collector Emitter Voltage, Vceo:24V; Transistor Polarity:PNP; C-E Breakdown Voltage:12V; DC Current Gain Min (hfe):110; Collector Current:100mA; Package/Case:TO-5; Current Rating:0.1A; Voltage Rating:24V
T-PNP- GE-AF PREAMP-DR-PO
RESISTOR WIREWOUND 5.6K OHM 3W
Bipolar Transistor; Current Rating:1.5A; Voltage Rating:50V
T-NPN-SI-AF DRIVER
; Transistor Polarity:N Channel; C-E Breakdown Voltage:140V; DC Current Gain Min (hfe):20; Collector Current:12A; Package/Case:TO-3P; DC Current Gain Max (hfe):200; Mounting Type:Through Hole
Single Digit Seven Segment Display; Number of Digits/Alpha:1; Digit/Alpha Height:7.62mm; Color:Red; Luminous Intensity (MSCP):500ucd
LED-DISPLAY-RED RoHS Compliant: Yes
Optoisolator; Collector Emitter Voltage, Vceo:30V; Transistor Polarity:NPN; Power Dissipation:250mW; C-E Breakdown Voltage:60V; DC Current Gain Min (hfe):50000; Collector Current:125mA; Package/Case:6-DIP
RF Bipolar Transistor; Collector Emitter Voltage, Vceo:1V; Transistor Polarity:N Channel; Power Dissipation:5W; DC Current Gain Min (hfe):25; Collector Current:400mA; DC Current Gain Max (hfe):200; Power (Ptot):5W
JFET; Transistor Polarity:N Channel; Breakdown Voltage, V(br)gss:-30V; Zero Gate Voltage Drain Current Min, Idss:5mA; Zero Gate Voltage Drain Current Max, Idss:15mA; Gate-Source cutoff Voltage Max, Vgs(off):-6V; Package/Case:TO-92
Optocoupler; Optocoupler Output Type:Transistor; Isolation Voltage:1500Vrms; Package/Case:6-DIP; Mounting Type:Through Hole; C-E Breakdown Voltage:30V; DC Current Gain Min (hfe):50; Transistor Polarity:NPN
OPTOISOLATOR/DARL
NPN-Output dc-Input Optocoupler,1-CHANNEL,3.5kV ISOLATION,DIP
Optocoupler; Optocoupler Output Type:Transistor; Isolation Voltage:7500Vrms; Package/Case:6-DIP; Collector Current:0.05A; Mounting Type:Through Hole; Voltage Rating:30V; Transistor Polarity:NPN
Optocoupler; Optocoupler Output Type:Transistor; Isolation Voltage:7500Vrms; Package/Case:6-DIP; Collector Current:0.5A; Mounting Type:Through Hole; C-E Breakdown Voltage:80V; DC Current Gain Max (hfe):3.5; Transistor Polarity:NPN
Replaced by PTN04050C :
Bipolar Transistor; Package/Case:TO-3P; Current Rating:10A; Voltage Rating:800V
T-NPN-SI W/ 10K RESISTOR
T-NPN-SI COLOR TV OUTPUT
TVS UNI-DIR 64V 1500W SMC
RF Bipolar Transistor; Collector Emitter Voltage, Vceo:300mV; Power Dissipation, Pd:0.3W; DC Current Gain Min (hfe):350; C-E Breakdown Voltage:120V; Collector Current:100mA; DC Current Gain Max (hfe):700; Power (Ptot):300mW RoHS Compliant: Yes
Bipolar Transistor; Collector Emitter Voltage, Vceo:80V; Transistor Polarity:NPN; Power Dissipation:800mW; C-E Breakdown Voltage:80V; DC Current Gain Min (hfe):1000; Collector Current:1A; Package/Case:3-TO-92
T-NPN-SI HI SPEED SWITCH
T-NPN SI- HI VLTG/SPEED
Bipolar Transistor; Package/Case:TO-3P; Current Rating:6A; Voltage Rating:800V
Bipolar Transistor; Current Rating:12A; Voltage Rating:400V
Bipolar Transistor; Collector Emitter Voltage, Vceo:450V; Transistor Polarity:NPN; Power Dissipation:150W; DC Current Gain Min (hfe):10; Collector Current:15A; Package/Case:3-TO-218; Terminal Type:3; Current Rating:15A
Bipolar Transistor; Collector Emitter Voltage, Vceo:450V; Transistor Polarity:NPN; Power Dissipation:125W; Collector Current:8A; Package/Case:3-TO-218; Terminal Type:3; Current Rating:8A; Number of Cross References:81
SRAM Memory IC; Memory Type:MOS SRAM; Access Time, Tacc:55ns; Memory Configuration:4K x 1
Bipolar Transistor; Current Rating:4A; Voltage Rating:80V
milirtary DC-CD Converters 10 to 50W
TVS BIDIRECT 1500W 64V SMC
TVS UNIDIRECT 1500W 7.0V SMC
Military DC-DC Converters 10 to 50W 军事的DC - DC转换00W
CAP/ 27P 3K K CF X9S 军事的DC - DC转换00W
Military DC-DC Converters 10 to 50W 军事的DC - DC转换100W
Military DC-DC Converters 10 to 50W 军事的DC - DC转换1050W
IC; Mounting Type:Through Hole; Package/Case:9-SIP 军事的DC - DC转换00W
Military DC-DC Converters 10 to 50W 军事DC - DC转换00W
32 MCELL 3 VOLT ZERO POWER ISP CPLD - NOT RECOMMENDED for NEW DESIGN 军事的DC - DC转换00W
CONNECTOR ACCESSORY 军事的DC - DC转换00W
FLUKE-116 CALIBRATED BY NEWARK INONE SERVICES RoHS Compliant: NA 军事的DC - DC转换00W
Flash 16Mb PROM (ST Micro) 军事的DC - DC转换00W
Bipolar Transistor; Collector Emitter Voltage, Vceo:30V; Power Dissipation, Pd:625mW; DC Current Gain Min (hfe):50; C-E Breakdown Voltage:30V; Collector Current:300mA; DC Current Gain Max (hfe):800; Power (Ptot):750mW 军事的DC - DC转换00W
GT 8C 8#16 PIN RECP WALL 军事的DC - DC转换00W
Gate Logic IC; Logic Type:Gate; Logic Family:4000; Logic Base Number:4011; Package/Case:14-DIP; Number of Circuits:4; Mounting Type:Through Hole 军事的DC - DC转换00W
SCR Thyristor; Thyristor Type:Standard Gate; Peak Repetitive Off-State Voltage, Vdrm:800V; On-State RMS Current, IT(rms):10A; Peak Non Repetitive Surge Current, Itsm:100A; Gate Trigger Current Max, Igt:8mA 军事的DC - DC转换00W
Thyristor; Current Rating:10A; Mounting Type:Through Hole; Package/Case:TO-220; Current, It av:10A; Repetitive Reverse Voltage Max, Vrrm:600V; Voltage Rating:600V RoHS Compliant: Yes 军事的DC - DC转换00W
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| File Size |
83.54K /
2 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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