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  alumina Datasheet PDF File

For alumina Found Datasheets File :: 4582    Search Time::1.484ms    
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    MMQA5V6T1 MMQA20VT1 ON2242

Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
Part No. MMQA5V6T1 MMQA20VT1 ON2242
OCR Text ...ient Total Power Dissipation on alumina Substrate (3) @ TA = 25C Derate above 25C Thermal Resistance Junction to Ambient Junction and Storage Temperature Range Lead Solder Temperature -- Maximum (10 Second Duration) 1. 2. 3. 4. Non-repetiti...
Description SC-59 QUAD TRANSIENT VOLTAGE SUPPRESSOR 5.6 VOLTS 24 W, UNIDIRECTIONAL, 4 ELEMENT, SILICON, TVS DIODE
From old datasheet system

File Size 136.87K  /  8 Page

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    MMQA5V6T3 MMQA20VT3 MMQA20VT3G MMQA6V2T1 MMQA6V2T1G MMQA6V2T3 MMQA6V8T1 MMQA6V8T3 MMQA15VT1 MMQA15VT3 MMQA18VT3 MMQA18VT

ONSEMI[ON Semiconductor]
Part No. MMQA5V6T3 MMQA20VT3 MMQA20VT3G MMQA6V2T1 MMQA6V2T1G MMQA6V2T3 MMQA6V8T1 MMQA6V8T3 MMQA15VT1 MMQA15VT3 MMQA18VT3 MMQA18VT1 MMQA27VT1 MMQA27VT3 MMQA MMQA12VT1 MMQA12VT1G MMQA12VT3 MMQA13VT1 MMQA20VT1 MMQA21VT1 MMQA21VT3 MMQA22VT1 MMQA22VT3 MMQA24VT1 MMQA24VT3 MMQA30VT1 MMQA30VT3 MMQA33VT1 MMQA33VT3 MMQA5V6T1 MMQA-D MMQA30V MMQA33V MMQA13V MMQA12V MMQA20V
OCR Text ...ient Total Power Dissipation on alumina Substrate (Note 4) @ TA = 25C Derate above 25C Thermal Resistance from Junction-to-Ambient Junction and Storage Temperature Range Lead Solder Temperature - Maximum (10 Second Duration) Symbol Ppk Ppk ...
Description SC-74 Quad Monolithic Common Anode 资深大律 74四单片共阳极
SC-74 Quad Monolithic Common Anode 150 W, UNIDIRECTIONAL, 4 ELEMENT, SILICON, TVS DIODE
CIR 60C 60#16 SKT RECP
SC-59 Quad Monolithic Common Anode

File Size 67.33K  /  6 Page

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    SG3525AP SG2525AN SG2525AP SG3525AN SG2525A SG3525A

SGS Thomson Microelectronics
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
Part No. SG3525AP SG2525AN SG2525AP SG3525AN SG2525A SG3525A
OCR Text ...bol Rth j-pins Rth j-amb R th j-alumina Parameter Thermal Resistance Junction-pins Thermal Resistance Junction-ambient Thermal Resistance Junction-alumina (*) Max Max Max SO16 DIP16 50 80 50 Unit C/W C/W C/W * Thermalresistance junction-...
Description REGULATING PULSE WIDTH MODULATORS
SMPS CONTROLLER,VOLTAGE-MODE,BIPOLAR,DIP,16PIN,PLASTIC
From old datasheet system

File Size 116.57K  /  12 Page

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    SMMBD914LT1G SMMBD914LT3G

ON Semiconductor
Part No. SMMBD914LT1G SMMBD914LT3G
OCR Text ... ? c/w total device dissipation alumina substrate (note 2) t a = 25 ? c derate above 25 ? c p d 300 2.4 mw mw/ ? c thermal resistance, junction ? to ? ambient r ja 417 ? c/w junction and storage temperature range t j , t stg ? 55 to +150 ...
Description High-Speed Switching Diode
   High-Speed Switching Diode

File Size 120.07K  /  4 Page

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    RA07M1317MSA-101

Mitsubishi Electric Semiconductor
Part No. RA07M1317MSA-101
OCR Text ...ion: This module consists of an alumina substrate soldered onto a copper flange. For mechanical protection, a plastic cap is attached with silicone. The MOSFET transistor chips are die bonded onto metal, wire bonded to the substrate, and co...
Description 135-175MHz 6.7W 7.2V, 2 Stage Amp. For PORTABLE RADIO

File Size 127.42K  /  8 Page

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    2SK3348

Renesas Electronics Corporation
Part No. 2SK3348
OCR Text ... duty cycle 1% 2. Value on the alumina ceramic board (12.5x20x0.7mm) Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltege drain curr...
Description Silicon N Channel MOS FET High Speed Switching

File Size 154.27K  /  10 Page

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    RA07M4452MSA-101

Mitsubishi Electric Semiconductor
Part No. RA07M4452MSA-101
OCR Text ...ion: This module consists of an alumina substrate soldered onto a copper flange. For mechanical protection, a plastic cap is attached with silicone. The MOSFET transistor chips are die bonded onto metal, wire bonded to the substrate, and co...
Description 440-520MHz 7.0W 7.2V, 2 Stage Amp. For PORTABLE RADIO

File Size 129.08K  /  8 Page

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    BC847ALT1 BC847BLT1 BC847CLT1 BC848BLT1 BC850CLT1 BC849BLT1 BC846BLT1 BC850BLT1 BC848CLT1 BC849CLT1 BC848ALT1 BC849ALT1

MOTOROLA[Motorola, Inc]
MOTOROLA[Motorola Inc]
Motorola Inc
Motorola, Inc.
Motorola Mobility Holdings, Inc.
Part No. BC847ALT1 BC847BLT1 BC847CLT1 BC848BLT1 BC850CLT1 BC849BLT1 BC846BLT1 BC850BLT1 BC848CLT1 BC849CLT1 BC848ALT1 BC849ALT1 BC850ALT1 BC846ALT1 BC846ALT1-D BC846ALT1_D BC847CLT1THRUBC850CLT1 BC846ALT1D BC846ALT1/D
OCR Text ...mbient Total Device Dissipation alumina Substrate, (2) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD 225 1.8 RqJA PD 300 2.4 RqJA TJ, Tstg 417 - 55 to +150 mW mW/C C/W C 556 mW ...
Description CASE 318-08 STYLE 6 SOT-23 (TO-236AB)
CASE 318-08, STYLE 6 SOT-23 (TO-236AB)
CASE 318-08/ STYLE 6 SOT-23 (TO-236AB)
CIR 4C 4#0 FR PIN PLUG
High Speed CMOS Logic Triple 3-Input NOR Gates 14-PDIP -55 to 125 100 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB
NPN Silicon General Purpose Transistors NPN硅通用晶体
High Speed CMOS Logic Dual Monostable Multivibrators with Reset 16-SOIC -55 to 125 100 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB

File Size 220.44K  /  6 Page

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    BC847A

ZOWIE[Zowie Technology Corporation]
Part No. BC847A
OCR Text ...mbient Total Device Dissipation alumina Substrate, o Derate above 25 C Thermal Resistance Junction to Ambient Junction and Storage Temperature (2) C/W TA=25 C o PD R JA TJ,TSTG mW mW / oC o C/W o C DEVICE MARKING BC84...
Description GENERAL PURPOSE TRANSISTOR NPN SILICON

File Size 75.05K  /  4 Page

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    SMMBD7000LT1G SMMBD7000LT3G

ON Semiconductor
Part No. SMMBD7000LT1G SMMBD7000LT3G
OCR Text ... ? c/w total device dissipation alumina substrate, (note 2) t a = 25 ? c derate above 25 ? c p d 300 2.4 mw mw/ ? c thermal resistance, junction ? to ? ambient r ja 417 ? c/w junction and storage temperature t j , t stg ? 55 to +150 ? c ...
Description Dual Switching Diode
   Dual Switching Diode

File Size 120.59K  /  4 Page

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