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  8pcr-xx-006 Datasheet PDF File

For 8pcr-xx-006 Found Datasheets File :: 57+       Page :: | 1 | 2 | 3 | 4 | <5> | 6 |   

    IRF[International Rectifier]
Part No. JANSF2N7470T1 JANSH2N7470T1 IRHMS57064 JANSG2N7470T1 JANSR2N7470T1 IRHMS53064
Description 45 A, 60 V, 0.006 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA
RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-254AA)

File Size 170.29K  /  8 Page

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    NTD78N03-35G NTD78N03T4G NTD78N03-1G NTD78N03.1G NTD78N03.35 NTD78N03G NTD78N0335G NTD78N031 NTD78N031G NTD78N03T4

ON Semiconductor
Part No. NTD78N03-35G NTD78N03T4G NTD78N03-1G NTD78N03.1G NTD78N03.35 NTD78N03G NTD78N0335G NTD78N031 NTD78N031G NTD78N03T4
Description Power MOSFET 25 V, 78 A, Single N-Channel, DPAK; Package: 3 IPAK, Straight Lead; No of Pins: 3; Container: Rail; Qty per Container: 75 11.4 A, 25 V, 0.006 ohm, N-CHANNEL, Si, POWER, MOSFET
Power MOSFET 25 V, 78 A, Single N-Channel, DPAK; Package: DPAK 4 LEAD Single Gauge Surface Mount; No of Pins: 4; Container: Tape and Reel; Qty per Container: 2500 11.4 A, 25 V, 0.006 ohm, N-CHANNEL, Si, POWER, MOSFET
Power MOSFET 25 V, 78 A, Single N-Channel, DPAK; Package: DPAK-3 (SINGLE GAUGE); No of Pins: 4; Container: Rail; Qty per Container: 75
Power MOSFET 25 V, 78 A, Single N?Channel, DPAK

File Size 78.95K  /  7 Page

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    AP85T03GH AP85T03GJ

Advanced Power Electronics Corp.
Part No. AP85T03GH AP85T03GJ
Description 75 A, 30 V, 0.006 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
N-CHANNEL ENHANCEMENT MODE POWER MOSFET

File Size 170.77K  /  6 Page

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    IPP042N03LG IPB042N03LG

Infineon Technologies AG
Part No. IPP042N03LG IPB042N03LG
Description OptiMOS?? Power-Transistor
IPB042N03LG
OptiMOS? Power-Transistor
70 A, 30 V, 0.006 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB

File Size 362.51K  /  10 Page

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    Powerex, Inc.
POWEREX[Powerex Power Semiconductors]
Part No. QJD0240002
Description Dual Power MOSFET Module (400 Amperes/200 Volts) 400 A, 200 V, 0.006 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET

File Size 72.87K  /  2 Page

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    STB85NF3LL STB85NF3LLT4

ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
Part No. STB85NF3LL STB85NF3LLT4
Description N-CHANNEL 30V 0.006 OHM 85A D2PAK LOW GATE CHARGE STRIPFET POWER MOSFET
N-CHANNEL 30V 0.006 OHM 85A D2PAK LOW GATE CHARGE STRIPFET POWER MOSFET
N-CHANNEL 30V - 0.006ohm - 85A D2PAK LOW GATE CHARGE STripFET⑩II POWER MOSFET
N-CHANNEL 30V - 0.006ohm - 85A D2PAK LOW GATE CHARGE STripFETII POWER MOSFET
N-CHANNEL 30V - 0.006ohm - 85A D2PAK LOW GATE CHARGE STripFET?II POWER MOSFET

File Size 427.55K  /  9 Page

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    STB85NF3LL-1 STP85NF3LL

http://
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
Part No. STB85NF3LL-1 STP85NF3LL
Description N-CHANNEL 30V - 0.006ohm - 85A TO-220/I2PAK LOW GATE CHARGE STripFET?/a> POWER MOSFET
N-CHANNEL 30V - 0.006ohm - 85A TO-220/I2PAK LOW GATE CHARGE STripFET⑩ POWER MOSFET
N-CHANNEL 30V 0.006 OHM 85A TO-220/I2PAK LOW GATE CHARGE STRIPFET MOSFET
N-CHANNEL 30V - 0.006ohm - 85A TO-220/I2PAK LOW GATE CHARGE STripFET POWER MOSFET
N-CHANNEL 30V 0.006 OHM 85A TO-220/I2PAK LOW GATE CHARGE STRIPFET MOSFET

File Size 263.12K  /  9 Page

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    STP90NS04ZC

STMicroelectronics
Part No. STP90NS04ZC
Description 80 A, 33 V, 0.006 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
N-channel clamped 5mヘ - 80A TO-220 Fully protected SAFeFET⑩ Power MOSFET
N-channel clamped 5mΩ - 80A TO-220 Fully protected SAFeFET Power MOSFET

File Size 308.68K  /  13 Page

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    IXYS[IXYS Corporation]
IXYS, Corp.
Part No. IXFH52N30Q IXFK52N30Q IXFT52N30Q
Description    N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low t Low Gate Charge and Capacitances
From old datasheet system
N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low t Low Gate Charge and Capacitances 52 A, 300 V, 0.006 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-268

File Size 69.16K  /  2 Page

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    Spansion Inc.
Spansion, Inc.
SPANSION LLC
Part No. S29GL064M90FBIR00 S29GL064M90FCIR02 S29GL064M90FCIR03 S29GL064M90FCIR10 S29GL064M90FCIR12 S29GL064M90FCIR13 S29GL064M90FCIR20 S29GL256M10TAIR13 S29GL064M90TDIR13 S29GL064M90TDIR00 S29GL064M90TDIR02 S29GL064M90TDIR03 S29GL064M90TDIR10 S29GL064M90TDIR12 S29GL064M90FDIR33 S29GL064M90TBIR33 S29GL064M90TBIR32 S29GL064M90TFIR23 S29GL256M10TFIR23 S29GL064M90BCIR13 S29GL064M90BDIR10 S29GL064M90BDIR12 S29GL064M90FBIR20 S29GL064M90BDIR22 S29GL064M90FBIR22 S29GL064M90FDIR03 S29GL064M90BDIR33 S29GL064M90BDIR02 S29GL064M90BDIR32 S29GL064M90BDIR23 S29GL064M90TBIR22 S29GL064M90TBIR23 S29GL064M90TCIR20 S29GL064M90TBIR10 S29GL064M90BFIR10 S29GL064M90BFIR20 S29GL128M90TDIR82 S29GL064M90FAIR12 S29GL064M90FAIR10 S29GL128M90TFIR82 S29GL256M10TAIR20 S29GL128M90TAIR13 S29GL128M90TDIR12 S29GL128M90TAIR10 S29GL128M90FDIR22 S29GL064M90BCIR23 S29GL064M90FBIR03 S29GL256M10TFIR20 S29GL064M90BFIR00 S29GL064M90BDIR13 S29GL064M90TDIR22 SPANSIONINC.-S29GL064M90BFIR10 SPANSIONLLC-S29GL064M90TBIR20 S29GL064M90FFIR23 SPANSIONLLC-S29GL064M90FFIR32
Description MOSFET, Switching; VDSS (V): 300; ID (A): 88; Pch : 150; RDS (ON) typ. (ohm) @10V: 0.042; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 5000; toff (µs) typ: -; Package: TO-3P
MOSFET, Switching; VDSS (V): 30; ID (A): 60; Pch : 90; RDS (ON) typ. (ohm) @10V: 0.0046; RDS (ON) typ. (ohm) @4V[4.5V]: [0.008]; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 2500; toff (µs) typ: 0.07; Package: TO-220AB
MOSFET, Switching; VDSS (V): 60; ID (A): 70; Pch : 80; RDS (ON) typ. (ohm) @10V: 0.006; RDS (ON) typ. (ohm) @4V[4.5V]: [0.008]; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 6200; toff (µs) typ: 0.125; Package: LDPAK (S)- (2)
MOSFET, Switching; VDSS (V): 60; ID (A): 70; Pch : 80; RDS (ON) typ. (ohm) @10V: 0.006; RDS (ON) typ. (ohm) @4V[4.5V]: [0.008]; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 6200; toff (µs) typ: 0.125; Package: LDPAK (L)
MOSFET, Switching; VDSS (V): 150; ID (A): 70; Pch : -; RDS (ON) typ. (ohm) @10V: 0.022; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 5100; toff (µs) typ: -; Package: TO-3P
MOSFET, Switching; VDSS (V): 200; ID (A): 25; Pch : 30; RDS (ON) typ. (ohm) @10V: 0.036; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 2200; toff (µs) typ: 0.11; Package: TO-220FN
MOSFET, Switching; VDSS (V): 200; ID (A): 96; Pch : 150; RDS (ON) typ. (ohm) @10V: 0.02; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 4900; toff (µs) typ: 0.22; Package: TO-3P
MOSFET, Switching; VDSS (V): 290; ID (A): 18; Pch : 30; RDS (ON) typ. (ohm) @10V: 0.07; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 2200; toff (µs) typ: 0.11; Package: TO-220FN
MOSFET, Switching; VDSS (V): 230; ID (A): 35; Pch : -; RDS (ON) typ. (ohm) @10V: 0.03; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 5200; toff (µs) typ: -; Package: TO-3PFM
MOSFET, Switching; VDSS (V): 300; ID (A): 40; Pch : 150; RDS (ON) typ. (ohm) @10V: 0.058; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 5150; toff (µs) typ: 0.22; Package: TO-3P
3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology 3.0伏只页面模式闪存具有0.23微米工艺技术的MirrorBit
3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology 4M X 16 FLASH 3V PROM, 90 ns, PDSO48
3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology 4M X 16 FLASH 3V PROM, 90 ns, PBGA64
3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology 16M X 16 FLASH 3V PROM, 100 ns, PDSO56
3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology 8M X 16 FLASH 3V PROM, 90 ns, PDSO56
3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology 8M X 8 FLASH 3V PROM, 90 ns, PBGA63
MOSFET, Switching; VDSS (V): 30; ID (A): 30; Pch : 50; RDS (ON) typ. (ohm) @10V: 0.008; RDS (ON) typ. (ohm) @4V[4.5V]: 0.013 (5V); RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 1400; toff (&#181;s) typ: 0.055; Package: LDPAK (L)

File Size 2,173.74K  /  160 Page

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