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DLV60 LL4002 SLE55R01 24002 O17TG XF001 0663002 PRESS
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  6w 6w Datasheet PDF File

For 6w 6w Found Datasheets File :: 2734    Search Time::2.391ms    
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    APT8011 APT8011JFLL

ADPOW[Advanced Power Technology]
Part No. APT8011 APT8011JFLL
OCR Text ...SS ID = ID [Cont.] @ 25C RG = 0.6w MIN TYP MAX UNIT pF 10020 1930 317 369 48 209 23 23 83 19 ns nC Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time SOURCE-DRAIN DIODE RATIN...
Description Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

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    APT8014JFLL

Advanced Power Technology
Part No. APT8014JFLL
OCR Text ...t.] @ 25C VDD = 0.5 VDSS RG = 0.6w ID = ID [Cont.] @ 25C MIN TYP 2 ns MAX UNIT Amps Volts V/ns ns 42 168 1.3 15 440 1100 (VGS = 0V, IS = -ID [Cont.]) Tj = 25C Tj = 25C Tj = 125C 2.0 13 15 30 Tj = 125C Tj = 25C Tj...
Description Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

File Size 58.42K  /  2 Page

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    APT8014JLL

Advanced Power Technology
Part No. APT8014JLL
OCR Text ...VGS = 15V VDD = 0.5 VDSS RG = 0.6w ID = ID[Cont.] @ 25C MIN TYP (Body Diode) 2 ns MAX UNIT Amps Volts ns C 42 168 1.3 (VGS = 0V, IS = -ID[Cont.]) Reverse Recovery Time (IS = -ID[Cont.], dl S/dt = 100A/s) Reverse Recovery ...
Description Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

File Size 56.73K  /  2 Page

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    APT8014L2FLL

ADPOW[Advanced Power Technology]
Part No. APT8014L2FLL
OCR Text ...nt.] @ 25C VDD = 0.5 VDSS RG =0.6w ID = ID [Cont.] @ 25C MIN TYP 2 ns MAX UNIT Amps Volts V/ns ns 52 208 1.3 18 440 1100 (VGS = 0V, IS = -ID [Cont.]) dv/ dt Tj = 25C Tj = 25C Tj = 125C 2.0 13 15 30 Tj = 125...
Description Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

File Size 52.75K  /  2 Page

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    APT8014L2LL

ADPOW[Advanced Power Technology]
Part No. APT8014L2LL
OCR Text ...A I 161 VDD = 0.5 VDSS RG = 0.6w ID = ID[Cont.] @ 25C MIN TYP (Body Diode) 2 ns MAX UNIT Amps Volts ns C 52 208 1.3 (VGS = 0V, IS = -ID[Cont.]) 930 Reverse Recovery Charge (IS = -ID[Cont.], dl S/dt = 100A/s) dt 2...
Description Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

File Size 51.58K  /  2 Page

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    APT8018 APT8018L2VR APT8018JN

ADPOW[Advanced Power Technology]
Part No. APT8018 APT8018L2VR APT8018JN
OCR Text ...A I 230 VDD = 0.5 VDSS RG = 0.6w ID = ID[Cont.] @ 25C MIN TYP (Body Diode) (Body Diode) 2 ns MAX UNIT Amps Volts ns C 43 172 1.3 (VGS = 0V, IS = -ID[Cont.]) 930 29 Reverse Recovery Charge (IS = -ID[Cont.], dl S /dt =...
Description Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

File Size 58.92K  /  2 Page

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    APT8020B2FLL APT8020LFLL

ADPOW[Advanced Power Technology]
Part No. APT8020B2FLL APT8020LFLL
OCR Text ...t.] @ 25C VDD = 0.5 VDSS RG = 0.6w ID = ID [Cont.] @ 25C MIN TYP 2 ns MAX UNIT Amps Volts V/ns ns 38 132 1.3 18 320 650 (VGS = 0V, IS = -ID [Cont.]) Tj = 25C Tj = 25C Tj = 125C 2.2 7.5 14 24 Tj = 125C Tj = 25C Tj...
Description Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

File Size 58.72K  /  2 Page

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    APT8020B2LL APT8020LLL APT6029BLL APT6029SLL

ADPOW[Advanced Power Technology]
Part No. APT8020B2LL APT8020LLL APT6029BLL APT6029SLL
OCR Text ...DSS ID = ID[Cont.] @ 25C RG = 0.6w MIN TYP MAX UNIT 5175 975 170 190 25 123 12 14 38 8.8 ns nC pF Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time SOURCE-DRAIN DIODE RATING...
Description Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

File Size 56.99K  /  2 Page

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    APT8020JFLL APT6017JFLL

ADPOW[Advanced Power Technology]
Part No. APT8020JFLL APT6017JFLL
OCR Text ...SS ID = ID [Cont.] @ 25C RG = 0.6w MIN TYP MAX UNIT pF 5320 1020 168 196 26 111 19 17 57 11 ns nC Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time SOURCE-DRAIN DIODE RATING...
Description Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

File Size 58.28K  /  2 Page

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    APT8020JLL

Advanced Power Technology
Part No. APT8020JLL
OCR Text ...VGS = 15V VDD = 0.5 VDSS RG = 0.6w ID = ID[Cont.] @ 25C MIN TYP (Body Diode) 2 ns MAX UNIT Amps Volts ns C 33 142 1.3 (VGS = 0V, IS = -ID[Cont.]) Reverse Recovery Time (IS = -ID[Cont.], dl S/dt = 100A/s) Reverse Recovery ...
Description Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

File Size 56.75K  /  2 Page

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For 6w 6w Found Datasheets File :: 2734    Search Time::2.391ms    
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