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  5.30-5.90ghz Datasheet PDF File

For 5.30-5.90ghz Found Datasheets File :: 56    Search Time::1.875ms    
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    Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. MGF0921A
OCR Text ...ature Ratings -15 -15 1800 -5.0 15 10 175 -65 to +175 Unit V V mA mA mA W C C Electrical characteristics Symbol IDSS VGS(off) g...30 25 Po(dBm) PAE 60 50 40 30 Gp 20 15 10 5 0 -5 0 5 10 Pin(dBm) 15 20 25 20 10 0 Pi(S...
Description LnS Band GaAs FET
L & S BAND GaAs FET

File Size 427.43K  /  24 Page

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    Mitsubishi Electric Corporation
Part No. MGF0915A
OCR Text ... high output power po=36.5 dbm(typ.) @f=1.9ghz,pin=23dbm ? high power gain gp=14.5 db(typ.) @f=1.9ghz ? high power added effi...30 35 40 5 1015202530 pin(dbm) gp(db),po(dbm) 0 10 20 30 40 50 60 70 80 pae(%) gp pae po vds=10v id...
Description L & S BAND GaAs FET[ SMD non - matched ]

File Size 1,318.88K  /  48 Page

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    MGF0916A

Mitsubishi Electric Semiconductor
Part No. MGF0916A
OCR Text ...re Ratings -8 -8 250 -0.6 1.5 1.5 175 -65 to +175 (Ta=25C) Unit V V mA mA mA W C C Electrical characteristics Symbol IDSS VGS(o...30 19 1.0 70 Max. 250 -4.5 100 Unit mA V mS dBm % dB dB C/W *1:Channel to case / Above par...
Description L & S BAND GaAs FET ( SMD non - matched )

File Size 43.08K  /  4 Page

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    MGF0913A MGF0913A11

Mitsubishi Electric Semiconductor
Part No. MGF0913A MGF0913A11
OCR Text ...i gr reverse gate current -2.5 ma i gf forward gate current 5.4 ma p t total power dissipation 5.0 w tch cannel temperatu...30 ? c/w *1: channel to case / above parameters, ratings, limits are subject to change. ...
Description High-power GaAs FET (small signal gain stage)

File Size 106.86K  /  4 Page

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For 5.30-5.90ghz Found Datasheets File :: 56    Search Time::1.875ms    
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