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INFINEON[Infineon Technologies AG]
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| Part No. |
SPW52N50C3
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| OCR Text |
...f
V DD=380V, V GS=0/10V,
ID=52A, RG =1.8
-
ns
Gate Charge Characteristics Gate to source charge Qgs Gate to drain charge Gate charge total Gate plateau voltage Qgd Qg
VDD=380V, ID=52A
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30 160 290 5
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nC
VDD=3... |
| Description |
Cool MOS Power Transistor
Cool MOS⑩ Power Transistor
for lowest Conduction Losses & fastest Switching
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| File Size |
248.22K /
11 Page |
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IRF[International Rectifier]
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| Part No. |
IRLI2203 IRLI2203G
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| OCR Text |
...VDSS = 30V RDS(on) = 0.010 ID = 52A
Absolute Maximum Ratings
Parameter
ID @ TC = 25C ID @ TC = 100C IDM PD @TC = 25C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Collector Current, VGS @ 10V Pulsed Drain... |
| Description |
Power MOSFET(Vdss=30V, Rds(on)=0.010ohm, Id=52A)
Power MOSFET(Vdss=30V, Rds(on)=0.010ohm, Id=52A?
Power MOSFET(Vdss=30V, Rds(on)=0.010ohm, Id=52A??
Power MOSFET(Vdss=30V, Rds(on)=0.010ohm, Id=52A?)
TERMINAL
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| File Size |
286.77K /
8 Page |
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it Online |
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FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
FDP52N20
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| OCR Text |
52A, 200V, RDS(on) = 0.049 @VGS = 10 V * Low gate charge ( typical 49 nC) * Low Crss ( typical 66 pF) * Fast switching * 100% avalanche tested * Improved dv/dt capability
TM
Description
These N-Channel enhancement mode power field ef... |
| Description |
200V N-Channel MOSFET
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| File Size |
731.94K /
8 Page |
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it Online |
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FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
FDB52N20TM FDB52N20
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| OCR Text |
52A, 200V, RDS(on) = 0.049 @VGS = 10 V * Low gate charge ( typical 49 nC) * Low Crss ( typical 66 pF) * Fast switching * 100% avalanche tested * Improved dv/dt capability
TM
Description
These N-Channel enhancement mode power field ef... |
| Description |
200V N-Channel MOSFET
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| File Size |
617.98K /
8 Page |
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it Online |
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Microsemi, Corp.
ADPOW[Advanced Power Technology]
http://
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| Part No. |
APTM20TDUM16P APTM20TDUM16PG
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| OCR Text |
... Tj = 125C 3
VGS = 10V, ID = 52A VGS = VDS, ID = 2.5mA VGS = 30 V, VDS = 0V
Dynamic Characteristics
Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf Eon Eoff Eon Eoff
Characteristic Input Capacitance Output Capacitance Revers... |
| Description |
Triple dual common source MOSFET Power Module 104 A, 200 V, 0.016 ohm, 6 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
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| File Size |
310.11K /
6 Page |
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it Online |
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http://
MICROSEMI[Microsemi Corporation]
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| Part No. |
APTM20TDUM16PG
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| OCR Text |
... = 125C 16 3
VGS = 10V, ID = 52A VGS = VDS, ID = 2.5mA VGS = 30 V, VDS = 0V
Max 250 1000 19 5 100
Unit A m V nA
Dynamic Characteristics
Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf Eon Eoff Eon Eoff
Characteristic I... |
| Description |
Triple dual common source MOSFET Power Module
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| File Size |
291.81K /
8 Page |
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it Online |
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ADPOW[Advanced Power Technology]
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| Part No. |
APTM20TAM16FP
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| OCR Text |
... Tj = 125C 3
VGS = 10V, ID = 52A VGS = VDS, ID = 2.5mA VGS = 30 V, VDS = 0V
Dynamic Characteristics
Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf Eon Eoff Eon Eoff
Characteristic Input Capacitance Output Capacitance Revers... |
| Description |
Triple phase leg MOSFET Power Module
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| File Size |
311.08K /
6 Page |
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it Online |
Download Datasheet |
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MICROSEMI[Microsemi Corporation]
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| Part No. |
APTM20TAM16FPG
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| OCR Text |
... = 125C 16 3
VGS = 10V, ID = 52A VGS = VDS, ID = 2.5mA VGS = 30 V, VDS = 0V
Max 250 1000 19 5 100
Unit A m V nA
Dynamic Characteristics
Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf Eon Eoff Eon Eoff
Characteristic I... |
| Description |
Triple phase leg MOSFET Power Module
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| File Size |
288.57K /
6 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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