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  22ghz Datasheet PDF File

For 22ghz Found Datasheets File :: 1861    Search Time::2.219ms    
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    AVAGO TECHNOLOGIES LIMI...
Part No. JESD22-A113-D
OCR Text ...eratures as shown in table 2. the wearout mechanisms are therefore not considered. the arrhenius temperature de-rating equation ...2ghz) and id 23.4ma(5ghz) with junction temperature of 150 c. 1000 hours 0/72 wet & high temper...
Description Avago Technologies?ALM-2812 is a dual band low noise amplifier

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    EIC1213-4

Excelics Semiconductor, Inc.
Part No. EIC1213-4
OCR Text ...odulation Distortion f = 10 MHz 2-Tone Test; Pout = 25.5 dBm S.C.L2 VDS = 10 V, IDSQ 65% IDSS f = 13.2GHz Saturated Drain Current VDS = 3 V, VGS = 0 V Pinch-off Voltage Thermal Resistance 3 Caution! ESD sensitive device. MIN 35.5 5.5 T...
Description 12.70-13.20GHz 4-Watt Internally-Matched Power FET

File Size 173.09K  /  4 Page

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    SP5658 SP5658F SP5658FKG SP5658FKGMP1S SP5658FKGMP1T SP5658KG SP5658S SP5658SKGMP2S SP5658SKGMP2T

Mitel Networks, Corp.
MITEL[Mitel Networks Corporation]
Part No. SP5658 SP5658F SP5658FKG SP5658FKGMP1S SP5658FKGMP1T SP5658KG SP5658S SP5658SKGMP2S SP5658SKGMP2T
OCR Text 2.7GHz 3-Wire Bus Controlled Frequency Synthesiser Advance Information Supersedes October 1996 Media IC Handbook HB3923-2 DS4064 - 4.1 Marc...2GHz so enabling a step size equal to the comparison frequency up to 2GHz and twice the comparison f...
Description 2.7GHz 3-Wire Bus Controlled Frequency Synthesiser 2.7GHz线总线控制频率合成

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    EPA960CR-180F

Excelics Semiconductor, Inc.
Part No. EPA960CR-180F
OCR Text ... MAX UNITS dBm dB % 3760 -2.5 mA mS V V V C/W * Overall Rth depends on case mounting. MAXIMUM RATINGS AT 25OC SYMBOLS Vds Vgs Igsf Igsr Pin Tch Tstg Pt PARAMETERS Drain-Source Voltage Gate-Source Voltage Forward Gate Current...
Description High Efficiency Heterojunction Power FET

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    T1L2003028-SP

TriQuint Semiconductor
Part No. T1L2003028-SP
OCR Text 2 GHz, PowerbandTM LDMOS RF Power Transistor Introduction The T1L2003028-SP is a POWERBANDTM discrete LDMOS, enhancement mode RF Power transistor designed to operate from 500MHz to 2GHz in wide-band circuits. The device has an instantaneo...
Description 30 W, 28V, 500 MHz-2 GHz, PowerbandTM LDMOS RF Power Transistor

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    MT4S200U

Toshiba Semiconductor
Part No. MT4S200U
OCR Text ...7dB (@f=5.8GHz) High Gain:|S21e|2=9.5dB (@f=5.8GHz) Marking 4 3 P USQ JEDEC JEITA 1 2 1.Collector 2.Emitter 3.Base 4.Em...2GHz VCE=3V, IC=15mA, f=5.8GHz VCE=3V, IC=5mA, f=2GHz VCE=3V, IC=5mA, f=5.8GHz Min 15.0 Ty...
Description UHF-SHF Low Noise Amplifier Application

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    EFC240D

Excelics Semiconductor, Inc.
Part No. EFC240D
OCR Text ...dBm dB % 320 200 480 280 -2.5 720 mA mS -4.0 V V V o Drain Breakdown Voltage Igd=2.4mA Source Breakdown Voltage Igs=2.4mA Thermal Resistance (Au-Sn Eutectic Attach) O -15 -10 -20 -17 23 C/W MAXIMUM RATINGS...
Description Low Distortion GaAs Power FET

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    EFC240B-180F

Excelics Semiconductor, Inc.
Part No. EFC240B-180F
OCR Text ...0 16.5 11.5 40 320 200 520 280 -2.5 -18 -10 -20 -17 22* o ELECTRICAL CHARACTERISTICS (Ta = 25C) SYMBOL P1dB G1dB PAE IDSS GM VP BVGD BV...2GHz f = 4GHz VDS = 10 V, IDS 50% IDSS Gain at 1dB Compression f = 2GHz f = 4GHz VDS = 10 V, IDS 5...
Description Low Distortion GaAs Power FET

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    HVV1214-025

HVVi Semiconductors, Inc.
Part No. HVV1214-025
OCR Text ... Voltage 105 Unit VA IDSX Drain 2 A VGS Drain-Source Voltage 105 10 Gate-Source ValueV VW Unit VDSS Symbol Parameter Voltage P 22 Power Diss...2GHz operating 1.4GHz.the mode device high over voltage siliconpower HVV1214-025 RF transistor from ...
Description L-Band Radar Pulsed Power Transistor 1200-1400 MHz, 200楼矛s Pulse, 10% Duty for Ground Based Radar Applications
L-Band Radar Pulsed Power Transistor 1200-1400 MHz, 200μs Pulse, 10% Duty for Ground Based Radar Applications

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    NMA-5109 NMA-5107 NMA-5108 NMA-5110 NMA-5111 NMA-5112 NMA-5200 NMA-5300

Micronetics, Inc.
Part No. NMA-5109 NMA-5107 NMA-5108 NMA-5110 NMA-5111 NMA-5112 NMA-5200 NMA-5300
OCR Text ...0Hz-1500MHz 2GHz-18GHz FLATNESS 2.0 dB 3.0 dB 4.0 dB 4.0 dB 4.0 dB 4.0 dB 4.0 dB 5.0 dB 5.0 dB VSWR 1.5:1 1.5:1 1.5:1 1.5:1 2.0:1 2.0:1 2.0:1 2.0:1 2.0:1 RF OUTPUT dBm/Hz -70 +5.0, -1.0 dB -75 +5.0, -1.5 dB -77 +5.0, -2.0 dB -79 +5.0, -2.0 ...
Description HIGH POWER NOISE GENERATORS 100 HZ TO 18 GHZ

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