| |
|
 |
POWEREX[Powerex Power Semiconductors]
|
| Part No. |
FS16VS-5
|
| OCR Text |
...
DRAIN CURRENT ID (A)
VGS = 20v 10V 8V
TC = 25C Pulse Test
OUTPUT CHARACTERISTICS (TYPICAL) VGS=20v 10V 20 6V 7V PD = 125W 16 TC =...8a 0 4 8 12 16 20
0.1 0 10-1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 DRAIN CURRENT ID (A)
0
GAT... |
| Description |
Nch POWER MOSFET HIGH-SPEED SWITCHING USE
|
| File Size |
46.29K /
4 Page |
 View
it Online |
Download Datasheet
|
| |
|
|
Infineon
|
| Part No. |
G03H1202
|
| OCR Text |
... C E = 0V ,V G E = 2 0V V C E = 20v, I C = 3A I C E S DataSheet4U.com V G E = 0V V C E = 1200V, 2 20 80 100 nA S 2.1 2.2 2.5 2.4 3 2.8 3.9 A...8a T C =25C T C =100C
50s 1A 100s 1m s 0,1A 100m s DC 0,01A
6A
4A
2A
Ic
1V 10V 100V ... |
| Description |
High Speed 2-Technology
|
| File Size |
405.50K /
10 Page |
View
it Online |
Download Datasheet |
| |
|
|
Mitsubishi Electric Corporation
POWEREX[Powerex Power Semiconductors]
|
| Part No. |
FS16VS-6
|
| OCR Text |
...CS (TYPICAL) 50 PD = 125W VGS = 20v 10V 8V TC = 25C Pulse Test
DRAIN CURRENT ID (A)
OUTPUT CHARACTERISTICS (TYPICAL) VGS=20v 10V 20 PD =...8a 0 0 4 8 12 16 20
DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) ()
0.2
4
0.1 0 10-1 2 3 5 ... |
| Description |
MITSUBISHI Nch POWER MOSFET HIGH-SPEED SWITCHING USE
|
| File Size |
46.64K /
4 Page |
View
it Online |
Download Datasheet |
| |
|
|
IRF[International Rectifier]
|
| Part No. |
CPV363MU
|
| OCR Text |
..., T J = 150C -- -- 500 nA VGE = 20v
Switching Characteristics @ T = 25C (unless otherwise specified) J
Qg Qge Qgc td(on) tr td(off) tf E...8a 6.8 nC VCC = 400V 17 See Fig. 8 -- TJ = 25C -- ns IC = 6.8a, V CC = 480V 200 VGE = 15V, R G = 23 ... |
| Description |
IGBT SIP MODULE Ultra-Fast IGBT
|
| File Size |
412.33K /
8 Page |
View
it Online |
Download Datasheet |
| |
|
|
INTERSIL[Intersil Corporation]
Intersil, Corp.
|
| Part No. |
FSYE13A0R4 FSYE13A0D FSYE13A0D1 FSYE13A0D3 FSYE13A0R FSYE13A0R1 FSYE13A0R3
|
| OCR Text |
...25 250 100 200 2.32 VGS = 0V to 20v VGS = 0V to 12V VGS = 0V to 2V VDD = 50V, ID = 12A ID = 12A, VDS = 15V VDS = 25V, VGS = 0V, f = 1MHz 0.0...8a, VGS = 12V
Gate to Source Leakage Current
Drain to Source On-State Voltage Drain to Source ... |
| Description |
Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs 12 A, 100 V, 0.16 ohm, N-CHANNEL, Si, POWER, MOSFET
|
| File Size |
55.19K /
8 Page |
View
it Online |
Download Datasheet |
| |
|
|
Intersil, Corp.
INTERSIL[Intersil Corporation]
|
| Part No. |
FSYE23A0R4 FSYE23A0D FSYE23A0D1 FSYE23A0D3 FSYE23A0R FSYE23A0R1 FSYE23A0R3
|
| OCR Text |
...5oC MIN 200 1.5 0.5 VGS = 0V to 20v VGS = 0V to 12V VGS = 0V to 2V VDD = 100V, ID = 8a ID = 8a, VDS = 15V VDS = 25V, VGS = 0V, f = 1MHz TYP 0.25 34 6.1 18 7 750 180 50 MAX 5.0 4.0 25 250 100 200 2.77 0.33 0.538 15 30 45 20 57 38 1.9 7.4 20 ... |
| Description |
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs 8 A, 200 V, 0.33 ohm, N-CHANNEL, Si, POWER, MOSFET
|
| File Size |
57.42K /
8 Page |
View
it Online |
Download Datasheet |
| |
|
|
Sirectifier Global
|
| Part No. |
RTM2301
|
| OCR Text |
20v P-Channel Enhancement Mode MOSFET
Pin assignment: 1. Gate 2. Source 3. Drain
VDS = - 20v RDS (on), Vgs @ - 4.5V, Ids @ - 2.8a =130m RDS (on), Vgs @ - 2.5V, Ids @ - 2.0A =190m
Features
Advanced trench process technology High dens... |
| Description |
20v N-Channel Enhancement Mode MOSFET
|
| File Size |
202.97K /
4 Page |
View
it Online |
Download Datasheet |
| |
|
|
Pulse Engineering, Inc.
|
| Part No. |
14A-10-10B3NL
|
| OCR Text |
... 3.8a 16V C.T. @ 3.5A 8V @ 7.0A 20v C.T. @ 0.12A 10V @ 0.24A 20v C.T. @ 0.25A 10V @ 0.5A 20v C.T. @ 0.5A 10V @ 1.0A 20v C.T. @ 1.0A 10V @ 2.0A 20v C.T. @ 1.5A 10V @ 3.0A 20v C.T. @ 2.8a 10V @ 5.6A 24V C.T. @ 0.1A 12V@ 0.2A 24V C.T. @ 0.21A ... |
| Description |
Power Transformer: Low Frequency Laminated - International PC Plug-in
|
| File Size |
73.96K /
1 Page |
View
it Online |
Download Datasheet |
|
Price and Availability
|
