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  200-1800v Datasheet PDF File

For 200-1800v Found Datasheets File :: 331    Search Time::3.016ms    
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    DIM400GDM33-A000

Dynex Semiconductor Ltd.
Part No. DIM400GDM33-A000
OCR Text ...= 68nF L ~ 100nH Min. Typ. 1450 200 500 500 300 650 12 280 400 300 Max. Units ns ns mJ ns ns mJ C C A mJ Tcase = 125C unless stated other...1800V RG(ON) = RG(OFF) = 4.7 Cge = 68nF L ~ 100nH IF = 400A, VR = 1800V, dIF/dt = 2000A/s Min. Typ. ...
Description Dual Switch IGBT Module Preliminary Information

File Size 162.21K  /  10 Page

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    Dynex Semiconductor Ltd.
DYNEX[Dynex Semiconductor]
Part No. DFM600FXM18-A000
OCR Text ...) 1000 Tj = 125C 800 600 400 200 0 0 10 0.5 2.0 1.0 1.5 2.5 Foward voltage, VF - (V) 3.0 3.5 1 0.001 1 2 3 4 Ri (C/KW) 1.5612 5.7426 6.999 25.6068 i (ms) 0.0063516 1.4746 13.9664 111.7517 0.01 0.1 Pulse width, tp - (...
Description Fast Recovery Diode Module Preliminary Information

File Size 99.55K  /  7 Page

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    Dynex Semiconductor Ltd.
DYNEX[Dynex Semiconductor]
Part No. DFM900FXM18-A000
OCR Text ... 900 800 700 600 500 400 300 200 100 2000 1000 0 0 20 40 60 80 100 120 Case temperature, Tcase - (C) 140 160 0 0 20 40 60 80 100 120 Case temperature, Tcase - (C) 140 160 Fig. 5 Power dissipation ...
Description Fast Recovery Diode Module Preliminary Information

File Size 99.54K  /  7 Page

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    Powerex Power Semicondu...
POWEREX[Powerex Power Semiconductors]
Part No. PD421207 PD4707 PD421407 PD421607 PD421807
OCR Text ... 54,750 40,000 36,500 32,100 25,200 6.60 x 10 6.66 x 10 400 150 -40 to +125 -40 to +150 132 15 106 12 455 11.75 3000 6 6 Units V V A A A...1800V, TJ=125 C Up to 1800V, TJ=125 C ITM=3000A, TJ=125 C TJ = 125 C, I = 15%IT(AV) to IT(AV) TJ = 1...
Description POW-R-BLOK Dual SCR / Diode Isolated Module (700 Amperes / Up to 1800 Volts)

File Size 97.68K  /  5 Page

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    Dynex Semiconductor, Ltd.
Dynex Semiconductor Ltd.
DYNEX[Dynex Semiconductor]
Part No. DIM200PHM33-A000
OCR Text ...0V Test Conditions Max. 3300 20 200 400 2315 20 6000 10 Units V V A A W kA2s V pC 2/10 Caution: This device is sensitive to electrosta...1800V, dIF/dt = 1100A/s Test Conditions IC = 200A VGE = 15V VCE = 1800V RG(ON) = RG(OFF) =10 Cge = 3...
Description Half Bridge IGBT Module Preliminary Information 200 A, 3300 V, N-CHANNEL IGBT

File Size 186.17K  /  10 Page

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    Dynex Semiconductor Ltd.
DYNEX[Dynex Semiconductor]
Part No. DCR1374SBA10 DCR1374SBA18 DCR1374SBA DCR1374SBA08 DCR1374SBA12 DCR1374SBA14 DCR1374SBA16
OCR Text ...Hz s 50 100 400 100 150 150 150 200 150 150 125 500 150 150 100 1ms 150 100 25 10 10ms 20 - 10 0W W 50 20 W 10 5W W 1000 IT QS 1 Tj = 125C U dI/dt IRR 100 0.1 1.0 10 100 VGD er Low limi Tj = 25C r ppe ...
Description Phase Control Thyristor

File Size 108.63K  /  8 Page

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    GP1200ESM33

DYNEX[Dynex Semiconductor]
Part No. GP1200ESM33
OCR Text ...1600 1400 1200 1000 800 600 400 200 0 0 1.0 2.0 3.0 4.0 5.0 Collector-emitter voltage, Vce - (V) 6.0 1600 1400 1200 1000 800 600 400 200 0 0 1.0 2.0 3.0 4.0 5.0 Collector-emitter voltage, Vce - (V) 6.0 7.0 Fig.3 Typical output charact...
Description High Reliability Single Switch IGBT Module Advance Information

File Size 149.92K  /  9 Page

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    GP1200FSM18

DYNEX[Dynex Semiconductor]
Part No. GP1200FSM18
OCR Text ...0 250 450 250 500 180 Max. 1250 200 700 400 400 650 350 Units ns ns mJ ns ns mJ C A mJ Tcase = 125C unless stated otherwise Symbol td(off) tf EOFF td(on) tr EON Qrr Irr EREC Parameter Turn-off delay time Fall time Turn-off energy loss Tu...
Description Hi-Reliability Single Switch IGBT Module

File Size 125.25K  /  9 Page

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For 200-1800v Found Datasheets File :: 331    Search Time::3.016ms    
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