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  100v 7a Datasheet PDF File

For 100v 7a Found Datasheets File :: 965    Search Time::1.25ms    
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    STD2NC40 STD2NC40-1

意法半导
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
Part No. STD2NC40 STD2NC40-1
OCR Text ...D = 1.5A, di/dt = 100A/s, VDD = 100v, T j = 150C (see test circuit, Figure 5) 180 625 5 Test Conditions Min. Typ. Max. 1.5 6 1.5 Unit A A V ns nC A Note: 1. Pulsed: Pulse duration = 300 s, duty cycle 1.5 %. 2. Pulse width limited by safe...
Description N-CHANNEL 400V - 4.7ohm - 1.5A IPAK PowerMeshII MOSFET

File Size 85.74K  /  8 Page

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    STN1HNC60

ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
STMicroelectronics N.V.
Part No. STN1HNC60
OCR Text ...D = 1.4A, di/dt = 100A/s, VDD = 100v, Tj = 150C (see test circuit, Figure 5) 500 950 3.8 Test Conditions Min. Typ. Max. 0.4 1.6 1.6 Unit A A V ns nC A Note: 1. Pulsed: Pulse duration = 300 s, duty cycle 1.5 %. 2. Pulse width limited by s...
Description N-CHANNEL 600V 7 OHM 0.4A SOT-223 POWERMESH II MOSFET
N-CHANNEL 600V - 7ohm - 0.4A - SOT-223 PowerMesh?II MOSFET
N-CHANNEL 600V - 7ohm - 0.4A - SOT-223 PowerMeshII MOSFET
N-CHANNEL 600V - 7ohm - 0.4A - SOT-223 PowerMesh⑩II MOSFET N沟道600V 7ohm - 0.4A - SOT - 223封装MOSFET的第二PowerMesh

File Size 259.54K  /  8 Page

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    IRFS530 IRFS530A IRFS530ANL

FAIRCHILD[Fairchild Semiconductor]
Part No. IRFS530 IRFS530A IRFS530ANL
OCR Text ... Current : 10 A (Max.) @ VDS = 100v Lower RDS(ON) : 0.092 (Typ.) 1 IRFS530A BVDSS = 100 V RDS(on) = 0.11 ID = 10.7 A TO-220F 2 ...7a,VGS=0V TJ=25 C ,IF=14A diF/dt=100A/ s 4 O Notes ; 1 Repetitive Rating : Pulse Width Limite...
Description N-CHANNEL POWER MOSFET
Advanced Power MOSFET
100v N-Channel A-FET / Substitute of IRFS530

File Size 259.63K  /  7 Page

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    SKB02N60 SKP02N60

INFINEON[Infineon Technologies AG]
Part No. SKB02N60 SKP02N60
OCR Text ...10kHz 100kHz 1V 10V 100v 1000V f, SWITCHING FREQUENCY Figure 1. Collector current as a function of switching frequency (Tj...7a 6A 5A 4A 3A 2A 1A 0A 25C IC, COLLECTOR CURRENT Ptot, POWER DISSIPATION 50C 75C 100...
Description IGBTs & DuoPacks - 2A 600V TO220AB IGBT Diode
IGBTs & DuoPacks - 2A 600V TO263AB SMD IGBT Diode
Fast IGBT in NPT-technology with soft fast recovery anti-parallel EmCon diode
Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode

File Size 392.65K  /  13 Page

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    IRF5801

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRF5801
OCR Text ...--- VGS = 10V --- 6.5 --- VDD = 100v --- 8.0 --- ID = 0.36A ns --- 8.8 --- RG = 53 --- 19 --- VGS = 10V --- 88 --- VGS = 0V --- 18 --- VDS ...7a 0.9A Current Sampling Resistors Fig 14a&b. Basic Gate Charge Test Circuit and Waveform 1...
Description Power MOSFET(Vdss=200V, Rds(on)max=2.2ohm, Id=0.6A) 功率MOSFET(减振钢板基本\u003d 200V的电压,的Rdson)最大值\u003d 2.2ohm,身份证\u003d 0.6A的)
Power MOSFET(Vdss=200V/ Rds(on)max=2.2ohm/ Id=0.6A)

File Size 119.47K  /  8 Page

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    IRFR120N IRFU120N IRFR IRFR120NTR IRFR120NTRL IRFR120NTRR IRFU120NPBF

IRF[International Rectifier]
Part No. IRFR120N IRFU120N IRFR IRFR120NTR IRFR120NTRL IRFR120NTRR IRFU120NPBF
OCR Text ... Avalanche Rated D VDSS = 100v G S RDS(on) = 0.21 ID = 9.4A Description Fifth Generation HEXFETs from International Rectifier ...7a 25 VDS = 100v, VGS = 0V A 250 VDS = 80V, VGS = 0V, TJ = 150C 100 VGS = 20V nA -100 V GS = -20V 25...
Description    Power MOSFET(Vdss=100v, Rds(on)=0.21ohm, Id=9.4A)
(IRFR120N / IRFU120N) HEXFET Power MOSFET
HEXFET® Power MOSFET
100v Single N-Channel HEXFET Power MOSFET in a D-Pak package
100v Single N-Channel HEXFET Power MOSFET in a I-Pak package
9.1 A, 100 V, 0.21 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA

File Size 145.98K  /  10 Page

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    IRF7452 IRF7452TR

IRF[International Rectifier]
Part No. IRF7452 IRF7452TR
OCR Text 100v RDS(on) max 0.060 ID 4.5A Benefits Low Gate to Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Inclu...7a 5.5 V VDS = VGS, ID = 250A 25 VDS = 100v, VGS = 0V A 250 VDS = 80V, VGS = 0V, TJ = 150C 100 VGS =...
Description 100v Single N-Channel HEXFET Power MOSFET in a SO-8 package
Power MOSFET(Vdss=100v, Rds(on)max=0.060ohm, Id=4.5A)

File Size 103.14K  /  8 Page

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    SLA5057

SANKEN[Sanken electric]
Part No. SLA5057
OCR Text ...10V f=1.0MHz VGS=0V ID=3.5A VDD 100v RL=28.6 VGS=10V ISD=7a, VGS=0V IF=100mA 2.0 2.5 5.0 270 450 280 120 20 30 55 75 1.0 450 1.5 350 Specification min 200 100 100 4.0 typ max FET 2 Unit V nA Conditions ID=100A, VGS=0V VGS=20V VDS=200V, VGS=...
Description N-channel General purpose

File Size 28.32K  /  2 Page

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    IRF520L IRF520NS

IRF[International Rectifier]
Part No. IRF520L IRF520NS
OCR Text ... Avalanche Rated D VDSS = 100v RDS(on) = 0.20 G S ID = 9.7a Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Th...
Description Power MOSFET(Vdss=100v, Rds(on)=0.20ohm, Id=9.7a)

File Size 181.26K  /  10 Page

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    IRF520N

International Rectifier, Corp.
Part No. IRF520N
OCR Text ... Avalanche Rated D VDSS = 100v G S RDS(on) = 0.20 ID = 9.7a Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This...
Description Power MOSFET(Vdss = 100 V, Rds(on) = 0.20 Ohm, Id= 9.7a) 功率MOSFET(减振钢板基本\u003d 100伏,的Rds(on)\u003d 0.20欧姆,身份证\u003d 9.7a
Power MOSFET(Vdss = 100 V/ Rds(on) = 0.20 Ohm/ Id= 9.7a)
Power MOSFET(Vdss = 100 V, Rds(on) = 0.20 Ohm, Id= 9.7a)

File Size 113.03K  /  8 Page

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