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  unilateral Datasheet PDF File

For unilateral Found Datasheets File :: 420    Search Time::1.437ms    
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    MRF2947 MRF2947AT1 MRF2947AT2 MRF2947RAT1 MRF2947RAT2

MOTOROLA[Motorola, Inc]
Part No. MRF2947 MRF2947AT1 MRF2947AT2 MRF2947RAT1 MRF2947RAT2
OCR Text ... IC = 15 mA, f = 1 GHz) Maximum unilateral Gain (4) (VCE = 1 V, IC = 1 mA, f = 1 GHz) (VCE = 6 V, IC = 15 mA, f = 1 GHz) Maximum Stable Gain and/or Maximum Available Gain (5) (VCE = 1 V, IC = 1 mA, f = 1 GHz) (VCE = 6 V, IC = 15 mA, f = 1 G...
Description LOW NOISE TRANSISTORS

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    BFG92A BFG92A_X BFG92A/X

NXP Semiconductors
Part No. BFG92A BFG92A_X BFG92A/X
OCR Text ...ce transition frequency maximum unilateral power gain Ts 60 C IC = ic = 0; VCB = 10 V; f = 1 MHz IC = 15 mA; VCE = 10 V; f = 500 MHz IC = 15 mA; VCE = 10 V; Tamb = 25 C; f = 1 GHz IC = 15 mA; VCE = 10 V; Tamb = 25 C; f = 2 GHz F noise figu...
Description NPN 5 GHz wideband transistor

File Size 286.32K  /  13 Page

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    Quanzhou Jinmei Electro...
Part No. BFG94-2015 BFG94-15
OCR Text ... = 25 c 46 - ghz g um maximum unilateral power gain i c = 45 ma; v ce = 10 v; f = 1 ghz; t amb = 25 c 11.5 13.5 - db v o output voltage i c = 45 ma; v ce = 10 v; d im = - 60 db; r l = 75 w ; f = 800 mhz; t amb = 25 c - 500 - mv ...
Description NPN 6 GHz wideband transistor

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    Quanzhou Jinmei Electro...
Part No. BFG93A-15 BFG93A-2015
OCR Text ...00 mhz 4.5 6 - ghz g um maximum unilateral power gain i c = 30 ma; v ce =8v; t amb =25 c; f = 1 ghz - 16 - db i c = 30 ma; v ce =8v; t amb =25 c; f = 2 ghz - 10 - db f noise ?gure g s = g opt ; i c = 5 ma; v ce =8v; t amb =25 c; f = 1 gh...
Description NPN 6 GHz wideband transistors

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    BFS520

Philips Semiconductors
NXP Semiconductors
Part No. BFS520
OCR Text ...in transition frequency maximum unilateral power gain noise figure up to Ts = 118 C; note 1 IC = 20 mA; VCE = 6 V; Tj = 25 C IC = 20 mA; VCE = 6 V; f = 1 GHz; Tamb = 25 C Ic = 20 mA; VCE = 6 V; f = 900 MHz; Tamb = 25 C Ic = 5 mA; VCE = 6 V;...
Description NPN 9GHz wideband transistor(NPN 9G赫兹 宽带晶体
NPN 9 GHz wideband transistor

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    BFG93A BFG93A_X BFG93 BFG93A/X BFG93X

NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
Part No. BFG93A BFG93A_X BFG93 BFG93A/X BFG93X
OCR Text ...ce transition frequency maximum unilateral power gain Ts 85 C IC = ic = 0; VCB = 5 V; f = 1 MHz IC = 30 mA; VCE = 5 V; f = 500 MHz IC = 30 mA; VCE = 8 V; Tamb = 25 C; f = 1 GHz IC = 30 mA; VCE = 8 V; Tamb = 25 C; f = 2 GHz F noise figure s...
Description NPN 6 GHz wideband transistors(NPN 6G赫兹 宽带晶体 npn GHz的宽带晶体管(npn型第六代赫兹宽带晶体管)

File Size 132.96K  /  16 Page

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    BFT92W

NXP Semiconductors
PHILIPS[Philips Semiconductors]
Part No. BFT92W
OCR Text ... dB C V V mA mW UNIT maximum unilateral power gain IC = -15 mA; VCE = -10 V; f = 500 MHz; Tamb = 25 C noise figure junction temperature IC = -5 mA; VCE = -10 V; f = 500 MHz May 1994 2 Philips Semiconductors Product specificat...
Description PNP 4 GHz wideband transistor

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    BFR106

NXP Semiconductors
Part No. BFR106
OCR Text ...=25 ? c ? 5 ? ghz g um maximum unilateral power gain i c =30 ma; v ce = 6 v; f = 800 mhz; t amb =25 ? c ? 11.5 ? db v o output voltage i c =50 ma; v ce =9 v; r l =75 ? ; t amb =25 ? c; d im = ? 60 db; f (p ? q ? r) = 793.25 mhz ? 350 ? ...
Description    NPN 5 GHz wideband transistor

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    BFR505T

NXP Semiconductors
PHILIPS[Philips Semiconductors]
Part No. BFR505T
OCR Text ...in transition frequency maximum unilateral power gain noise figure Ts 75 C; note 1 IC = 5 mA; VCE = 6 V; Tj = 25 C IC = 5 mA; VCE = 6 V; f = 1 GHz; Tamb = 25 C RBE = 0 CONDITIONS open emitter MIN. - - - - 60 - TYP. - - - - 120 9 17 1.2 PIN...
Description NPN 9 GHz wideband transistor

File Size 103.39K  /  16 Page

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For unilateral Found Datasheets File :: 420    Search Time::1.437ms    
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