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Intel Corp.
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| Part No. |
A28F400BX-B
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| OCR Text |
...vings (aps) feature to minimize system battery current drain and allows for very low power designs. once the device is accessed to read arra...reset time of 300 ns is required from rp y switch- ing until outputs are valid. equivalently, the de... |
| Description |
4-MBIT (512K x8) Boot Block Flash Memory(4兆位(512K x8) 引导块闪速存储器)
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| File Size |
415.93K /
34 Page |
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it Online |
Download Datasheet
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Intel Corp.
Intel, Corp.
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| Part No. |
A28F200BX-B
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| OCR Text |
...vings (aps) feature to minimize system battery current drain and allow for very low power designs. once the device is ac- cessed to read arr...reset time of 300 ns is required from rp y switch- ing until outputs are valid. equivalently, the de... |
| Description |
2-MBIT (256K x 8) Boot Block Flash Memory(2兆位 (128K x 16) 引导块闪速存储器) 2兆位56K × 8）开机区块快闪记忆体兆位28K的16）引导块闪速存储器
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| File Size |
415.62K /
33 Page |
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it Online |
Download Datasheet |
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Electronic Theatre Controls, Inc.
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| Part No. |
80-0276-F
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| OCR Text |
system level esd mitigation design note ? 2006 sensory inc. p/n 80-0276-f 1 introduction the following is a list of industry b...reset pin as shown in figure 2 if it travels to the outside (usually via a user reset pushbutton) ... |
| Description |
System Level ESD Mitigation
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| File Size |
51.57K /
5 Page |
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it Online |
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Intel Corp.
Intel, Corp.
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| Part No. |
28F008SA-L
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| OCR Text |
...r interface e status register y system performance enhancements e ry/by y status output e erase suspend capability y high-performance read e...reset time of 500 ns is required from rp y switching high until outputs are valid to read attempts. ... |
| Description |
8-MBIT (1 MBIT x 8) FLASHFILETM MEMORY 8兆（1兆比特8FLASHFILETM记忆
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| File Size |
442.13K /
28 Page |
View
it Online |
Download Datasheet |
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