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SAMSUNG SEMICONDUCTOR CO. LTD.
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| Part No. |
KMM366F883BK2 KMM366F803BK2
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| OCR Text |
... ras to cas precharge time t rpc 5 5 ns 13 access time from cas precharge t cpa 28 35 ns 3,13 hyper page cycle time t hpc 20 25 ns 12 h...2. 3. 4. 5. 6. 7. 8. 9. 10. 11.
dram module kmm366f80(8)3bk2 ras v ih - v il - cas v ih - v... |
| Description |
8M x 64 DRAM DIMM(8M x 64 动RAM模块)
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| File Size |
416.71K /
20 Page |
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it Online |
Download Datasheet
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SAMSUNG SEMICONDUCTOR CO. LTD.
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| Part No. |
KMM366F884BS1
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| OCR Text |
... ras to cas precharge time t rpc 5 5 ns access time from cas precharge t cpa 28 35 ns 3 hyper page mode cycle time t hpc 20 25 ns 10 hy...2.0ns. for all of the refresh mode except distributed cas -before ras refresh, 4096 cycle of burst... |
| Description |
8M x 64 DRAM DIMM(8M x 64 动RAM模块)
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| File Size |
420.69K /
20 Page |
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it Online |
Download Datasheet |
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SAMSUNG SEMICONDUCTOR CO. LTD.
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| Part No. |
M466F0804DT1-L
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| OCR Text |
... ras to cas precharge time t rpc 5 5 ns access time from cas precharge t cpa 28 35 ns 3 hyper page mode cycle time t hpc 20 25 ns 10 hy...2.)
dram module m466f0804dt1-l rev. 0.1 oct. 2000 notes an initial pause of 200us is required aft... |
| Description |
8M x 64 DRAM SODIMM Using 4Mx16, 4K Refresh 3.3V, Low power/Self-Refresh
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| File Size |
300.63K /
20 Page |
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it Online |
Download Datasheet |
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Samsung Electronic
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| Part No. |
M372V0405DT0-CFASTPAGEMODE
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| OCR Text |
... ras to cas precharge time t rpc 3 3 ns 11 access time from cas precharge t cpa 35 40 ns 3,11 fast page mode cycle time t pc 35 40 ns f...2 7 2 7 ns present detect read cycle
dram module m372v0405dt0-c rev. 0.1 oct. 2000 notes an initia... |
| Description |
4MB x 72 DRAM DIMM with ECC Using 4MB x 16 & 4MB x 4, 4KB Refresh, 3.3V Data Sheet
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| File Size |
411.64K /
19 Page |
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it Online |
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Samsung Electronics
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| Part No. |
KM48V514D KM48C514D
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| OCR Text |
... ras to cas precharge time t rpc 5 5 5 ns cas precharge time ( c -b- r counter test cycle) t cpt 20 20 25 ns access time from cas pre...2 ttl(5v)/1 ttl(3.3v) loads and 100pf. operation within the t rcd (max) limit insures that t rac... |
| Description |
512K x 8-Bit CMOS DRAM
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| File Size |
539.85K /
21 Page |
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it Online |
Download Datasheet |
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SAMSUNG SEMICONDUCTOR CO. LTD.
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| Part No. |
KM44C1005D
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| OCR Text |
... ras to cas precharge time t rpc 5 5 5 ns cas precharge time ( c -b- r counter test cycle) t cpt 20 20 25 ns access time from cas pre...2 ttl load and 100pf. operation within the t rcd (max) limit insures that t rac (max) can be met. ... |
| Description |
1M x 4Bit CMOS Quad CAS DRAM with Extended Data Out(1M x 4位CMOSCAS 动态RAM(带扩展数据输)
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| File Size |
394.90K /
21 Page |
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it Online |
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Hitachi,Ltd.
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| Part No. |
HM51W17805LJ-6 HM51W17805LJ-7 HM51W17805LTS-6
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| OCR Text |
... precharge to cas hold time t rpc 555ns
hm51w17805 series 11 edo page mode cycle hm51w17805 -5 -6 -7 parameter symbol min max min max m...2 ns. 2. an initial pause of 200 m s is required after power up followed by a minimum of eight init... |
| Description |
16 M EDO DRAM(2-Mword*8-bit) 2K Refresh
16M EDO DRAM(2-Mword*8-bit)2k Refresh 动态随机存取存储器62-mword*8位）2刷新
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| File Size |
430.53K /
33 Page |
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it Online |
Download Datasheet |
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