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For rectifier- Found Datasheets File :: 37382 Search Time::0.984ms
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				IRF[International Rectifier]
Part No.	IRF3315S IRF3315L
OCR Text	...tion HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MO...
Description	Power MOSFET(Vdss=150V Rds(on)=0.082ohm Id=21A) Power MOSFET(Vdss=150V, Rds(on)=0.082ohm, Id=21A)
File Size	193.12K / 10 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF3315
OCR Text	...tion HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MO...
Description	Power MOSFET(Vdss=150V, Rds(on)=0.07ohm, Id=27A)
File Size	121.12K / 8 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF3415L IRF3415S
OCR Text	...tion HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MO...
Description	Power MOSFET(Vdss=150V/ Rds(on)=0.042ohm/ Id=43A) Power MOSFET(Vdss=150V, Rds(on)=0.042ohm, Id=43A) Power MOSFET(Vdss=150V Rds(on)=0.042ohm Id=43A)
File Size	152.65K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF3415
OCR Text	...tion HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MO...
Description	Power MOSFET(Vdss=150V/ Rds(on)=0.042ohm/ Id=43A) Power MOSFET(Vdss=150V, Rds(on)=0.042ohm, Id=43A) Power MOSFET(Vdss=150V Rds(on)=0.042ohm Id=43A)
File Size	90.69K / 8 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF360 IRF360-15
OCR Text	...ogy is the key to International Rectifier's advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest "State of the Art" design achieves: very low on-state resistance combined with high transcond...
Description	Repetitive Avalanche Ratings TRANSISTORS N-CHANNEL(Vdss=400V/ Rds(on)=0.20ohm/ Id=25A) TRANSISTORS N-CHANNEL(Vdss=400V, Rds(on)=0.20ohm, Id=25A) 400V Single N-Channel Hi-Rel MOSFET in a TO-204AE package
File Size	138.60K / 7 Page	View it Online	Download Datasheet

				International Rectifier, Corp. IRF[International Rectifier]
Part No.	IRF3710L IRF3710S
OCR Text	...tion HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MO...
Description	Power MOSFET(Vdss=100V, Rds(on)=0.025ohm, Id=57A) 功率MOSFET（减振钢板基本\u003d 100V的，的Rds（on）\u003d 0.025ohm，身份证\u003d 57A条） Power MOSFET(Vdss=100V/ Rds(on)=0.025ohm/ Id=57A) Power MOSFET(Vdss=100V Rds(on)=0.025ohm Id=57A)
File Size	180.61K / 10 Page	View it Online	Download Datasheet

				International Rectifier, Corp. IRF[International Rectifier]
Part No.	IRF3710 IRF3710PBF
OCR Text	...ower MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MO...
Description	Power MOSFET(Vdss=100V, Rds(on)=23mohm, Id=57A) 功率MOSFET（减振钢板基本\u003d 100V的，的Rds（on）\u003d 23mohm，身份证\u003d 57A条） Power MOSFET(Vdss=100V Rds(on)=23mohm Id=57A) 100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
File Size	92.57K / 8 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF3711 IRF3711L IRF3711S
OCR Text	...ASSEMBLY LINE "C" INTERNATIONAL RECTIFIER LOGO ASSEMBLY LOT CODE PART NUMBER DATE CODE YEAR 7 = 1997 WEEK 19 LINE C 8 www.irf.com IRF3711/3711S/3711L D2Pak Package Outline D2Pak Part Marking Information THIS IS AN IRF530S W...
Description	Power MOSFET(Vdss=20V, Rds(on)max=6.0mohm, Id=110A?? Power MOSFET(Vdss=20V/ Rds(on)max=6.0mohm/ Id=110A) Power MOSFET(Vdss=20V, Rds(on)max=6.0mohm, Id=110A?) Power MOSFET(Vdss=20V, Rds(on)max=6.0mohm, Id=110A) Power MOSFET(Vdss=20V, Rds(on)max=6.0mohm, Id=110A?
File Size	243.87K / 11 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF3717
OCR Text	Rectifier MOSFET for Isolated DC-DC Converters in Networking Systems VDSS 20V RDS(on) max 4.4m:@VGS = 10V A A D D D D ID 20A S S 1 2 3 4 8 7 Benefits l Ultra-Low Gate Impedance l Very Low RDS(on) l Fully Characteriz...
Description	HEXFETPower MOSFET
File Size	246.14K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier] International Rectifier, Corp.
Part No.	IRF3808L IRF3808S RF3808S
OCR Text	...ered trademark of International Rectifier. www.irf.com 1 03/08/02 IRF3808S/IRF3808L Electrical Characteristics @ TJ = 25C (unless otherwise specified) V(BR)DSS V(BR)DSS/TJ RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr t...
Description	75V Single N-Channel HEXFET Power MOSFET in a D2-Pak package 75V Single N-Channel HEXFET Power MOSFET in a TO-262 package AUTOMOTIVE MOSFET Power MOSFET(Vdss=75V, Rds(on)=0.007ohm, Id=106A?) Power MOSFET(Vdss=75V, Rds(on)=0.007ohm, Id=106A) Power MOSFET(Vdss=75V/ Rds(on)=0.007ohm/ Id=106A) Power MOSFET(Vdss=75V, Rds(on)=0.007ohm, Id=106A 功率MOSFET（减振钢板基本\u003d 75V的，的Rdson）\u003d 0.007ohm，身份证\u003d 106A章?
File Size	159.77K / 11 Page	View it Online	Download Datasheet

For rectifier- Found Datasheets File :: 37382 Search Time::0.984ms
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