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pulse-load Datasheet PDF File

For pulse-load Found Datasheets File :: 103591 Search Time::3.406ms
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				ADATA Technology Co., Ltd. A-DATA[A-Data Technology]
Part No.	ADS6632A4A ADS6632A4A-5 ADS6632A4A-5.5 ADS6632A4A-6
OCR Text	...Note : 1. VIH (max)=4.6V AC for pulse width 10ns acceptable. 2.VIL(min)=-1.5V AC for pulse width 10ns acceptable. 3.Any input 0V VIN VDD...load capacitance for access time measurement Note: 1. 3.15V VDD 3.6V is applied for ADS6632A4A5. S...
Description	Synchronous DRAM(512K X 32 Bit X 4 Banks)
File Size	229.91K / 8 Page	View it Online	Download Datasheet

				ADATA Technology Co., Ltd. A-DATA[A-Data Technology]
Part No.	ADS7608A4A ADS7608A4A-5 ADS7608A4A-55 ADS7608A4A-6 ADS7608A4A-7 ADS7608A4A-75 ADS7608A4A-7.5
OCR Text	...Note : 1. VIH (max)=4.6V AC for pulse width 10ns acceptable. 2.VIL(min)=-1.5V AC for pulse width 10ns acceptable. 3.Any input 0V VIN VDD...load capacitance for access time measurement Note: 1. 3.15V VDD 3.6V is applied for ADS7608A4A5. S...
Description	Synchronous DRAM(4M X 8 Bit X 4 Banks) Synchronous DRAM(4M X 8 Bit X 4 Banks) 同步DRAM4米8位4银行 Synchronous DRAM(4M X 8 Bit X 4 Banks) 同步DRAM米8位4银行 133 Mhz LVTTL synchronous DRAM, 4 M x 8 bit x 4 banks
File Size	209.31K / 8 Page	View it Online	Download Datasheet

				A-DATA[A-Data Technology] ADATA Technology Co., Ltd.
Part No.	ADS7616A4A ADS7616A4A-55 ADS7616A4A-6 ADS7616A4A-7 ADATATECHNOLOGYCO.LTD.-ADS7616A4A-7
OCR Text	...Note : 1. VIH (max)=4.6V AC for pulse width 10ns acceptable. 2.VIL(min)=-1.5V AC for pulse width 10ns acceptable. 3.Any input 0V VIN VDD...load capacitance for access time measurement Note: 1. 3.15V VDD 3.6V is applied for ADS7616A4A55. ...
Description	Synchronous DRAM(2M X 16 Bit X 4 Banks) Synchronous DRAM(2M X 16 Bit X 4 Banks) 同步DRAM米16位4个银行）
File Size	196.04K / 8 Page	View it Online	Download Datasheet

				STMicroelectronics
Part No.	STI24N60M2 STW24N60M2 STB24N60M2 STP24N60M2
OCR Text	... t c = 100 c 12 a i dm (1) 1. pulse width limited by safe operating area. drain current (pulsed) 72 a p tot total dissipation at t c = 2...load figure 17. gate charge test circuit figure 18. test circuit for inductive l...
Description	N-channel 600 V, 0.168 typ., 18 A MDmesh II Plus low Qg Power MOSFET in D2PAK N-channel 600 V, 0.168 Ω typ., 18 A MDmesh II Plus?low Qg Power MOSFET in D2PAK, I2PAK, TO-220 and TO-247 packages
File Size	1,548.24K / 22 Page	View it Online	Download Datasheet

				ON Semiconductor
Part No.	MTD10N10EL-D
OCR Text	... 100 c drain current e single pulse (t p 10 m s) i d i d i dm 10 6.0 35 adc apk total power dissipation @ t c = 25 c derate above 2...load, v gs remains virtually constant at a level known as the plateau voltage, v sgp . therefore,...
Description	TMOS E-FET Power Field Effect Transistor DPAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate
File Size	252.77K / 10 Page	View it Online	Download Datasheet

				Infineon Technologies A...
Part No.	BCR169F
OCR Text	... v, f = 1 mhz c cb - 3 - pf 1 pulse test: t < 300s; d < 2% 2007-08-02 4 bcr169... dc current gain h fe = ? ( i c ) v ce = 5 v (comm...load p totmax / p totdc = ? ( t p ) bcr169 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s t p 0...
Description	PNP Silicon Digital Transistor
File Size	253.32K / 12 Page	View it Online	Download Datasheet

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