EPITAXIAL-BASE/ silicon N-P-N AND P-N-P VERSAWATT transistors SMA FEMALE power DIVIDER; NUMBER OF OUTPUT PORTS: 4; FREQUENCY RANGE: 0.5 - 1 GHz; MINIMUM ISOLATION: 20 dB; VSWR: 1.30 MAXIMUM; MAXIMUM INSERTION EPITAXIAL-BASE silicon N-P-N AND P-N-P VERSAWATT transistors EPITAXIAL-BASE, silicon N-P-N AND P-N-P VERSAWATT transistors