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  K4E640412E-JP60 Datasheet PDF File

For K4E640412E-JP60 Found Datasheets File :: 34+       Page :: | 1 | 2 | 3 | <4> |   

    Renesas
Part No. RJP60F5DPM
Description N-Channel IGBT

File Size 136.70K  /  7 Page

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Renesas Electronics Corporation

Part No. RJP60D0DPP-M0#T2
Description IGBT for Inverter Applications, TO-220FL, /Tube
Tech specs    

Official Product Page

HUA FENG CIRCUIT





    RJP60V0DPM-80T2

Renesas Electronics Corporation
Part No. RJP60V0DPM-80T2
Description 600V - 22A - IGBT Application: Inverter

File Size 108.56K  /  8 Page

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Renesas Electronics Corporation

Part No. RJP6065DPP-00#T2
Description Insulated-Gate Bipolar Transistors (IGBT)
Tech specs    

Official Product Page

    RJP60F7DPK RJP60F7DPK-00T0

Renesas Electronics Corporation
Part No. RJP60F7DPK RJP60F7DPK-00T0
Description 600V - 50A - IGBT High Speed Power Switching

File Size 100.71K  /  7 Page

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Renesas Electronics Corporation

Part No. RJP60F7DPK-00#T0
Description Insulated-Gate Bipolar Transistors (IGBT)
Tech specs    

Official Product Page

    RJQ6003DPM-00T0 RJP6003DPM

Renesas Electronics Corporation
Part No. RJQ6003DPM-00T0 RJP6003DPM
Description 600V - 20A - IGBT and Diode High Speed Power Switching

File Size 107.51K  /  9 Page

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Renesas Electronics Corporation

Part No. RJP60D0DPM-00#T1
Description IGBT for Inverter Applications, TO-3PFM, /Tube
Tech specs    

Official Product Page

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Part: K4E640412E-TC50
Maker: SAMSUNG(三星)
Pack: TSOP
Stock: 2120
Unit price for :
    50: $2.10
  100: $2.00
1000: $1.89

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