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  diffusion-type Datasheet PDF File

For diffusion-type Found Datasheets File :: 981    Search Time::1.906ms    
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    Samsung Electronic
Part No. STDH90
OCR Text ... rams and roms C up to 512k-bit diffusion rom available C up to 128k-bit single-port static ram available C up to 64k-bit dual-port static r...type or the different type in a circuit can be tested by single bist circuit. compiled datapath macr...
Description 0.35 Micron STDH90 Library Introduction

File Size 39.38K  /  21 Page

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    AUK[AUK corp]
Part No. SHE155BG-B
OCR Text diffusion lens type Ellipse type(X=5.2mm, Y=3.8mm) Ultra luminosity Flangeless package High power LEDs Oval shape Lens Color : Blue(Diffusion Type) Half Angle(2 1/2) : 110 / 40 ) Application * Full color displays * Message boards * Vari...
Description High Efficiency LED Lamp

File Size 320.89K  /  5 Page

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    Hamamatsu Photonics
Part No. S3902 S3903 S3903-1024Q S3903-512Q
OCR Text ...unction consisting of an N-type diffusion layer formed on a P-type silicon substrate. A signal charge generated by light input accumulates as a capacitive charge in this PN junction. The N-type diffusion layer provides high UV sensitivity b...
Description MOSFET, Switching; VDSS (V): 400; ID (A): 17; Pch : -; RDS (ON) typ. (ohm) @10V: 0.25; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V
MOSFET, Switching; VDSS (V): 450; ID (A): 14; Pch : -; RDS (ON) typ. (ohm) @10V: 0.43; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V
NMOS linear image sensor Current output, high UV sensitivity, excellent linearity, low power consumption
MOSFET, Switching; VDSS (V): 450; ID (A): 22; Pch : -; RDS (ON) typ. (ohm) @10V: 0.25; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 1800; toff (µs) typ: -; Package: TO-3P

File Size 217.07K  /  6 Page

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    PX1041A PX1041A-EL1 PX1041A-EL1G PX1041AI-EL1 PX1041AI-EL1G

NXP Semiconductors
Part No. PX1041A PX1041A-EL1 PX1041A-EL1G PX1041AI-EL1 PX1041AI-EL1G
OCR Text ...1041AI-EL1/G[1] xxxxxxx 2PGyyww diffusion lot number manufacturing code: 2 = diffusion site P = assembly site G = lead-free yy = year code w...type number PX1041A_1 (c) NXP B.V. 2007. All rights reserved. Objective data sheet Rev. ...
Description PCI Express stand-alone X4 PHY

File Size 162.24K  /  36 Page

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    Hamamatsu Photonics K.K.
HAMAMATSU[Hamamatsu Corporation]
Part No. S3901 S3901-128Q S3901-256Q S3901-512Q S3904-512Q S3904 S3904-1024Q S3904-256Q
OCR Text ...unction consisting of an N-type diffusion layer formed on a P-type silicon substrate. A signal charge generated by light input accumulates as a capacitive charge in this PN junction. The N-type diffusion layer provides high UV sensitivity b...
Description NMOS Linear image sensor NMOS管线性图像传感器
(S3901 / S3904) NMOS Linear Image Sensor

File Size 238.62K  /  6 Page

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    PX1011B PX1011B-EL1_G PX1011B-EL1G PX1011BI-EL1_G PX1011BI-EL1G

NXP Semiconductors
Part No. PX1011B PX1011B-EL1_G PX1011B-EL1G PX1011BI-EL1_G PX1011BI-EL1G
OCR Text ...1011BI-EL1/G[1] xxxxxxx 2PGyyww diffusion lot number manufacturing code: 2 = diffusion site P = assembly site G = lead-free yy = year code w...type number PX1011B_2 (c) NXP B.V. 2008. All rights reserved. Product data sheet Rev. 02...
Description PCI Express stand-alone X1 PHY

File Size 207.81K  /  30 Page

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    Advanced Micro Devices, Inc.
Part No. AMPAL22V10
OCR Text ...l22v10a is fabricated with amds diffusion- isolated bipolar process. the array connections are formed with highly reliable ptsi fuse. the pal22v10-15, -10 and -7 are fabricated with amds diffusion-isolated bipolar process. this process redu...
Description PAL22V10 Family, AmPAL22V10/A 24-Pin TTL Versatile PAL Device

File Size 188.43K  /  20 Page

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    S3904 S390105 S3901

Hamamatsu Corporation
Part No. S3904 S390105 S3901
OCR Text ...unction consisting of an N-type diffusion layer formed on a P-type silicon substrate. A signal charge generated by light input accumulates as a capacitive charge in this PN junction. The N-type diffusion layer provides high UV sensitivity b...
Description NMOS linear image sensor Current output, high UV sensitivity, excellent linearity, low power consumption

File Size 242.95K  /  6 Page

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    S3902-256Q S3902-128Q S3902-512Q S3903-1024Q S3903-256Q S3903-512Q S3902 S3903

Hamamatsu Corporation
Part No. S3902-256Q S3902-128Q S3902-512Q S3903-1024Q S3903-256Q S3903-512Q S3902 S3903
OCR Text ...unction consisting of an N-type diffusion layer formed on a P-type silicon substrate. A signal charge generated by light input accumulates as a capacitive charge in this PN junction. The N-type diffusion layer provides high UV sensitivity b...
Description NMOS linear image sensor Current output, high UV sensitivity, excellent linearity, low power consumption

File Size 222.54K  /  6 Page

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    http://
Part No. CBTL04DP211 CBTL04DP211BS
OCR Text ...[1] basic type number b xxxxxxx diffusion lot number c zpgyyww manufacturing code: z = diffusion site p = assembly site g = lead-free yy = year code ww = week code cbtl04dp211 all information provided in this document is subject to legal ...
Description DisplayPort 2 : 1 multiplexer

File Size 223.96K  /  17 Page

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