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White Electronic Designs Corporation
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| Part No. |
EDI2CG272128V9D1 EDI2CG272128V12D1 EDI2CG272128V15D1 EDI2CG272128V85D1 EDI2CG272128V-D1
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| Description |
2x128Kx72, 3.3V S nc/S nc burst Flow-Through(2x128Kx72, 3.3Vns,同步/同步脉冲静态RAM模块(流通结构）)
2x128Kx72, 3.3V S nc/S nc burst Flow-Through(2x128Kx72, 3.3V2ns,同步/同步脉冲静态RAM模块(流通结构）)
2x128Kx72, 3.3V S nc/S nc burst Flow-Through(2x128Kx72, 3.3V5ns,同步/同步脉冲静态RAM模块(流通结构）)
2x128Kx72.3VS数控/ s的数控突发流量通过x128Kx72.3伏，15纳秒，同同步脉冲静态内存模块（流通结构）
2x128Kx72.3VS数控/ s的数控突发流量通过x128Kx72.3伏，12ns，同同步脉冲静态内存模块（流通结构）
2x128Kx72.3VS数控/ s的数控突发流量通过x128Kx72.3伏，纳秒，同同步脉冲静态内存模块（流通结构）
SSRAM Modules 的SSRAM模块
2x128Kx72, 3.3V Sync/Sync burst Flow-Through(2x128Kx72, 3.3V.5ns,同步/同步脉冲静态RAM模块(流通结构）) 2x128Kx72.3同步/同步突发流量通过2x128Kx72.3伏，8.5ns，同同步脉冲静态内存模块（流通结构）
2x128Kx72, 3.3V Sync/Sync burst Flow-Through(2x128Kx72, 3.3V锛?.5ns,???/?????????RAM妯″?(娴??缁??锛?
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| File Size |
172.76K /
11 Page |
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Cypress Semiconductor, Corp.
CYPRESS SEMICONDUCTOR CORP
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| Part No. |
CY7C1415BV18-250BZI CY7C1415BV18-167BZI
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| Description |
36-Mbit QDR(TM)-II SRAM 4-Word burst Architecture; Architecture: QDR-II, 4 Word burst; Density: 36 Mb; Organization: 1Mb x 36; Vcc (V): 1.7 to 1.9 V 1M X 36 QDR SRAM, 0.45 ns, PBGA165
36-Mbit QDR™-II SRAM 4-Word burst Architecture
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| File Size |
956.33K /
30 Page |
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it Online |
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ETC
Electronic Theatre Controls, Inc.
List of Unclassifed Manufacturers
List of Unclassifed Man...
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| Part No. |
GS832218B-133 GS832218B-133I GS832218B-150 GS832218B-150I GS832218B-166 GS832218B-166I GS832218B-200 GS832218B-200I GS832218B-225 GS832218B-225I GS832218B-250 GS832218B-250I GS832272C-133 GS832272C-133I GS832272C-150 GS832272C-150I GS832272C-166 GS832272C-166I GS832272C-200 GS832272C-200I GS832272C-225 GS832272C-225I GS832218 GS832218B GS832218E GS832218E-133 GS832218E-133I GS832218E-150 GS832218E-150I GS832218E-166 GS832218E-166I GS832218E-200 GS832218E-225 GS832218E-225I GS832218E-250 GS832218E-250I GS832236 GS832236B GS832236B-133 GS832236E-133 GS832236E-133I GS832236E-150 GS832236E-150I GS832236E-166 GS832236E-166I GS832236E-200 GS832236E-200I GS832236E-225 GS832236E-225I GS832236E-250 GS832236E-250I GS832236B-250 GS832236B-200 GS832236B-133I GS832236B-166 GS832236B-225 GS832236B-150 GS832236B-200I GS832236B-225I GS832236B-150I GS832236B-166I GS832236B-250I GS832272 GS832272C-250 GS832272C-250I
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| Description |
64K 3.3 VOLT SERIAL CONFIGURATION PROM 200万1800万36，为512k × 72分配36MB的S /双氰胺同步突发静态存储器
GIGABASE 350 CAT5E PATCH 1 FT, SNAGLESS, WHITE 200万1800万36，为512k × 72分配36MB的S /双氰胺同步突发静态存储器
2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync burst SRAMs 200万18100万36，为512k × 72分配36MB的S /双氰胺同步突发静态存储器
2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync burst SRAMs 200万1800万36，为512k × 72分配36MB的S /双氰胺同步突发静态存储器
2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync burst SRAMs 200万1800万36，为512k × 72分配36MBS /双氰胺同步突发静态存储器
DIODE, ZENER, 4.3V, 0.5W, 5%, -65-175C, DO-35
(GS832218 / GS832236 / GS832272) S/DCD Sync burst SRAMs
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| File Size |
833.90K /
41 Page |
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Alliance Semiconductor, Corp.
ALSC[Alliance Semiconductor Corporation]
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| Part No. |
AS7C3364PFS36A-166TQI AS7C3364PFS32A AS7C3364PFS32A-100TQC AS7C3364PFS32A-100TQI AS7C3364PFS32A-133TQC AS7C3364PFS32A-133TQI AS7C3364PFS32A-150TQC AS7C3364PFS32A-150TQI AS7C3364PFS32A-166TQC AS7C3364PFS32A-166TQI AS7C3364PFS36A AS7C3364PFS36A-100TQC AS7C3364PFS36A-100TQI AS7C3364PFS36A-133TQC AS7C3364PFS36A-133TQI AS7C3364PFS36A-150TQC AS7C3364PFS36A-150TQI AS7C3364PFS36A-166TQC
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| Description |
3.3V 64K X 32/36 pipeline burst synchronous SRAM 64K X 36 STANDARD SRAM, 9 ns, PQFP100
3.3V 64K X 32/36 pipeline burst synchronous SRAM 64K X 36 STANDARD SRAM, 10 ns, PQFP100
3.3V 64K X 32/36 pipeline burst synchronous SRAM 64K X 32 STANDARD SRAM, 10 ns, PQFP100
DIODE ZENER SINGLE 1000mW 16Vz 15.5mA-Izt 0.05 5uA-Ir 12.2Vr DO41-GLASS 5K/REEL 64K X 36 STANDARD SRAM, 12 ns, PQFP100
3.3V 64K X 32/36 pipeline burst synchronous SRAM 64K X 32 STANDARD SRAM, 12 ns, PQFP100
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| File Size |
216.30K /
11 Page |
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it Online |
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Price and Availability
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