|
|
 |
TM Technology, Inc.
|
Part No. |
T431616A-7C T431616A-7CI T431616A-7SI
|
OCR Text |
...oing edge of system clock ? burst read single-bit write operation ? dqm for masking ? auto refresh and self refresh ? 32ms refresh period (2k cycle) ? mrs cycle with address key programs - cas latency ( 2 & 3 ) - burst ... |
Description |
1M x 16 SDRAM 100万16内存
|
File Size |
1,614.59K /
31 Page |
View
it Online |
Download Datasheet
|
|
|
 |
|
Part No. |
MT48H4M16LFB4-10IT
|
OCR Text |
...ccess/precharge programmable burst length s: 1, 2, 4, 8, or full page auto precharge, includes concurrent auto precharge, and auto refresh modes self refresh mode; standard and low power 64ms, 4,096-cycle refresh lvttl-compatibl... |
Description |
4M X 16 SYNCHRONOUS DRAM, 7 ns, PBGA54
|
File Size |
2,114.05K /
54 Page |
View
it Online |
Download Datasheet
|
|
|
 |
NANYA TECHNOLOGY CORP
|
Part No. |
NT5DS64M8AF-6K
|
OCR Text |
...ferenced to both edges of dqs burst lengths: 2, 4, or 8 cas latency: 2, 2.5 auto precharge option for each burst access auto refresh and self refresh modes 7.8 s maximum average periodic refresh interval 2.5v (sstl_2 compatible)... |
Description |
64M X 8 DDR DRAM, 0.7 ns, PBGA60
|
File Size |
2,293.16K /
76 Page |
View
it Online |
Download Datasheet
|
|

Price and Availability
|