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  a-fet Datasheet PDF File

For a-fet Found Datasheets File :: 25994    Search Time::4.234ms    
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    2N7002LT1 ON0106

Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
http://
Part No. 2N7002LT1 ON0106
OCR Text ...on of the package may result in a lower continuous drain current. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. FR-5 = 1.0 x 0.75 x 0.062 in. Alumina = 0.4 x 0.3 x 0.025 in 99.5% alumina. Preferred devices are Motorola recommended ch...
Description CASE 318-08, STYLE 21 SOT-23 (TO-236AB) 115 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB
From old datasheet system

File Size 92.99K  /  6 Page

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    2SJ117

HITACHI[Hitachi Semiconductor]
Part No. 2SJ117
OCR Text ... 40 150 -55 to +150 Unit V V A A A W C C Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage Gate to source leak current Symbol Min V(BR)DSS I GSS -400 -- -- -2.0 -- Typ -- -- -- -- 5 Max -- 1 -1 -5.0 7 Unit ...
Description Silicon P-Channel MOS FET

File Size 17.38K  /  3 Page

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    2SJ130 2SJ130L 2SJ130S

HITACHI[Hitachi Semiconductor]
Part No. 2SJ130 2SJ130L 2SJ130S
OCR Text ... 20 150 -55 to +150 Unit V V A A A W C C Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Symbol Min V(BR)DSS V(BR)GSS I GSS -300 20 -- -- -2.0 ...
Description Power switching MOSFET
Silicon P-Channel MOS FET

File Size 47.28K  /  8 Page

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    2SJ160 2SJ161 2SJ162

HITACHI[Hitachi Semiconductor]
Part No. 2SJ160 2SJ161 2SJ162
OCR Text ... 150 -55 to +150 Unit V V A A W C C 2 2SJ160, 2SJ161, 2SJ162 Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage 2SJ160 2SJ161 2SJ162 Gate to source breakdown voltage Gate to source cutoff voltage Drai...
Description Silicon P-Channel MOS FET

File Size 39.68K  /  8 Page

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    2SJ172

HITACHI[Hitachi Semiconductor]
Part No. 2SJ172
OCR Text ... 40 150 -55 to +150 Unit V V A A A W C C Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Symbol Min V(BR)DSS V(BR)GSS I GSS -60 20 -- -- -1.0 -...
Description Silicon P-Channel MOS FET

File Size 41.90K  /  7 Page

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    2SJ175

HITACHI[Hitachi Semiconductor]
Part No. 2SJ175
OCR Text ... 25 150 -55 to +150 Unit V V A A A W C C 2 2SJ175 Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Symbol Min V(BR)DSS V(BR)GSS IGSS VGS(off...
Description Silicon P-Channel MOS FET

File Size 29.99K  /  5 Page

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    2SJ181 2SJ181L 2SJ181S 2SJ182

HITACHI[Hitachi Semiconductor]
Part No. 2SJ181 2SJ181L 2SJ181S 2SJ182
OCR Text ... 20 150 -55 to +150 Unit V V A A A W C C Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Symbol Min V(BR)DSS V(BR)GSS I GSS -600 15 -- -- -2.0 ...
Description    Silicon P-Channel MOS FET

File Size 45.64K  /  10 Page

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    2SJ186

HITACHI[Hitachi Semiconductor]
Part No. 2SJ186
OCR Text ...5 1 150 -55 to +150 Unit V V A A A W C C Notes: 1. PW 10 s, duty cycle 1% 2. When using the alumina ceramic board (12.5x20x0.7 mm) 2 2SJ186 Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage Gate to...
Description    Silicon P-Channel MOS FET

File Size 41.04K  /  9 Page

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    2SJ217

NEC
Hitachi Semiconductor
Part No. 2SJ217
OCR Text ...150 150 -55 to +150 Unit V V A A A W C C Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Symbol Min V(BR)DSS V(BR)GSS I GSS -60 20 -- -- -1.0 -...
Description Silicon P-Channel MOS FET

File Size 48.19K  /  9 Page

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    2SJ221

Hitachi,Ltd.
HITACHI[Hitachi Semiconductor]
Part No. 2SJ221
OCR Text ... 75 150 -55 to +150 Unit V V A A A W C C Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Symbol Min V(BR)DSS V(BR)GSS I GSS -100 20 -- -- -1.0 ...
Description Box-shaped pin header, Discrete wire crimping connection, Discrete wire connectors; HRS No: 543-0611-3 05; No. of Positions: 8; Connector Type
Silicon P-Channel MOS FET

File Size 47.48K  /  8 Page

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