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9ghz Datasheet PDF File

For 9ghz Found Datasheets File :: 965 Search Time::2.344ms
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				NJRC[New Japan Radio]
Part No.	NJG1705V NJG1705V-C1 NJG1705V-C10 NJG1705V-C2 NJG1705V-C3 NJG1705V-C4 NJG1705V-C5 NJG1705V-C6 NJG1705V-C7 NJG1705V-C8 NJG1705V-C9 NJG1705V-L1 NJG1705V-L10 NJG1705V-L2 NJG1705V-L3 NJG1705V-L4 NJG1705V-L5 NJG1705V-L6 NJG1705V-L7 NJG1705V-L8 NJG1705V-L9 NJG1705V-R1
OCR Text	9ghz BAND FRONT-END GaAs MMIC nGENERAL DESCRIPTION NJG1705V is a front-end GaAs MMIC including a LNA, local amplifier and a Mixer, designed mainly for 1.5 and 1.9ghz band cellular phone. NJG1705V exhibits low noise of 16dB at 1.5GHz and 2....
Description	1.5/1.9ghz BAND FRONT-END GaAs MMIC
File Size	560.84K / 26 Page	View it Online	Download Datasheet

				NJRC[New Japan Radio]
Part No.	NJG1709KC1 NJG1709KC1-C1 NJG1709KC1-C10 NJG1709KC1-C11 NJG1709KC1-C2 NJG1709KC1-C3 NJG1709KC1-C4 NJG1709KC1-C5 NJG1709KC1-C6 NJG1709KC1-C7 NJG1709KC1-R2 NJG1709KC1-C8 NJG1709KC1-C9 NJG1709KC1-L1 NJG1709KC1-L10 NJG1709KC1-L11 NJG1709KC1-L2 NJG1709KC1-L3 NJG1709KC1-L4 NJG1709KC1-L5 NJG1709KC1-L6 NJG1709KC1-L7 NJG1709KC1-L8 NJG1709KC1-L9 NJG1709KC1-R1
OCR Text	9ghz BAND FRONT-END GaAs MMIC nGENERAL DESCRIPTION NJG1709KC1 is a front-end GaAs MMIC including a LNA, a local amplifier and a mixer, designed mainly for 1.5 or 1.9ghz band cellular phone. The ultra small & ultra thin FLP10 package is app...
Description	1.5/1.9ghz BAND FRONT-END GaAs MMIC
File Size	777.51K / 29 Page	View it Online	Download Datasheet

				Sanyo Semicon Device
Part No.	SPM3252
OCR Text	... -- RX Tsw TX RX Conditions f=1.9ghz Control voltage +3 / 0V f=1.9ghz Control voltage +3 / 0V f=1.9ghz f=1.9ghz Control voltage +3 / 0V Ratings min typ 0.6 0.65 22 22 1.4 20 24 20 max 0.9 0.95 Unit dB dB dB dB -ns dBm dBm 20 20 2.0 ...
Description	GaAs MMIC SPDT Switch
File Size	18.13K / 3 Page	View it Online	Download Datasheet

				SANYO[Sanyo Semicon Device]
Part No.	SPM3255
OCR Text	... + 3 / 0V) f=810 to 1033MHz f=1.9ghz f=1.9ghz f=810 to 1033MHz f=1.9ghz f=810 to 1033MHz f=1.9ghz f=810MHz to 1.9ghz f=810MHz to 1.9ghz 17 24 20 22 1.1 1.4 20 20 1.3 2.0 100 ns dBm 0.6 Ratings min typ max 0.5 0.9 50 Unit dB dB A dB dB Ma...
Description	Single Power Supply Operation RF Switch MMIC
File Size	28.82K / 3 Page	View it Online	Download Datasheet

				SIEMENS[Siemens Semiconductor Group]
Part No.	BFP196W Q62702-F1576
OCR Text	...er Gain Gma, Gms = f(IC) f = 0.9ghz VCE = Parameter 20 dB Power Gain Gma, Gms = f(IC) f = 1.8GHz VCE = Parameter 12 dB 18 8V 3V G 17 16 15 14 13 8V 3V 2V G 10 2V 9 8 7 12 11 10 0.7V 9 8 0 20 40 60 80 mA IC 1...
Description	From old datasheet system NPN Silicon RF Transistor(For low noise low distortion broadband amplifiers in antenna and telecommunications) NPN Silicon RF Transistor(For low noise, low distortion broadband amplifiers in antenna and telecommunications)
File Size	60.65K / 7 Page	View it Online	Download Datasheet

				SIEMENS[Siemens Semiconductor Group]
Part No.	BFP196 Q62702-F1320
OCR Text	...er Gain Gma, Gms = f(IC) f = 0.9ghz VCE = Parameter 18 Power Gain Gma, Gms = f(IC) f = 1.8GHz VCE = Parameter 10 10V dB 5V 3V dB G 10V 14 5V 3V 2V 12 G 8 2V 7 6 5 1V 4 10 1V 3 0.7V 2 8 0.7V 6 0 20 40 60 80 ...
Description	From old datasheet system NPN Silicon RF Transistor (For low noise, low distortion broadband amplifiers in antenna and telecommunications)
File Size	61.07K / 7 Page	View it Online	Download Datasheet

				SIEMENS[Siemens Semiconductor Group]
Part No.	BFR181W Q62702-F1491
OCR Text	...er Gain Gma, Gms = f(IC) f = 0.9ghz VCE = Parameter 20 dB 18 10V 5V Power Gain Gma, Gms = f(IC) f = 1.8GHz VCE = Parameter 14 dB 12 10V 5V 3V 2V G 17 16 15 14 13 12 11 10 9 8 0 2 4 6 8 10 12 14 mA IC 18 1V 2V 3V G 11 10 9 8...
Description	NPN Silicon RF Transistor )For low noise/ high-gain broadband amplifiers at collector currents from 0.5 mA to 12mA) NPN Silicon RF Transistor )For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12mA) From old datasheet system
File Size	56.17K / 7 Page	View it Online	Download Datasheet

				SIEMENS[Siemens Semiconductor Group]
Part No.	BFR181 Q62702-F1314
OCR Text	...er Gain Gma, Gms = f(IC) f = 0.9ghz VCE = Parameter 20 Power Gain Gma, Gms = f(IC) f = 1.8GHz VCE = Parameter 14 dB dB 10V 5V 3V 8 2V 10V 3V G G 10 16 2V 14 6 1V 12 4 1V 10 2 0.7V 0 2 4 6 8 10 12 14 mA IC 18 ...
Description	From old datasheet system NPN Silicon RF Transistor (For low noise high-gain broadband amplifiers at collector currents from 0.5 mA to 12mA) NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12mA)
File Size	57.16K / 7 Page	View it Online	Download Datasheet

				SIEMENS[Siemens Semiconductor Group]
Part No.	BFS480 Q62702-F1531
OCR Text	...er Gain Gma, Gms = f(IC) f = 0.9ghz VCE = Parameter 22 Power Gain Gma, Gms = f(IC) f = 1.8GHz VCE = Parameter 15 dB dB G 18 8V 2V G 13 12 11 8V 3V 2V 16 1V 14 0.7V 12 10 9 8 7 0.7V 1V 10 6 8 0 2 4 6 8 mA I...
Description	NPN Silicon RF Transistor (For low noise/ low-power amplifiers in mobile communication systems) NPN Silicon RF Transistor (For low noise, low-power amplifiers in mobile communication systems) From old datasheet system
File Size	52.38K / 6 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	HA22033
OCR Text	...Micro Wave Application(1.5 to 1.9ghz) Low voltage and low current operation (2.7V, 1.7mA typ.) Low noise (1.4 dB typ. @1.5GHz) High power gain (14 dB typ. @1.5GHz) Built-in matching circuits (50) Small surface mount package (MPAK-5) Outl...
Description	GaAs MMIC Low Noise Amplifier for Micro Wave Application
File Size	43.33K / 12 Page	View it Online	Download Datasheet

For 9ghz Found Datasheets File :: 965 Search Time::2.344ms
Page :: | 1 | 2 | 3 | <4> | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |