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  51163-0400 Datasheet PDF File

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    Samsung Electronics
Part No. K4X51163PG-FGC6 K4X51163PG-FGC8
Description 32Mx16 Mobile DDR SDRAM
File Size 364.01K  /  23 Page

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Amphenol Cables on Demand
Part No. SF-NDYYYF0004-001.5M
Description Amphenol SF-NDYYYF0004-001.5M 1.5m (4.9') 400GbE QSFP-DD Cable - Amphenol 400-Gigabit Ethernet Passive Copper QSFP Double Density Cable (Dual Entry 30 AWG) - QSFP-DD to QSFP-DD
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HUA FENG CIRCUIT





    K4H511638B-TC/LB3

Samsung Semiconductor
Part No. K4H511638B-TC/LB3
Description DDR Sdram 512Mb B-die
File Size 259.87K  /  23 Page

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Texas Instruments
Part No. TPS51163DRCT
Description 4.5V to 13.2V Synchronous Buck Controller with High Current Gate Driver, 600kHz 10-VSON -40 to 85
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Part No. K4T51163QE-ZPD50
Description 32M X 16 DDR DRAM, 0.5 ns, PBGA84
File Size 449.51K  /  25 Page

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Texas Instruments
Part No. TPS51163DRCR
Description 4.5V to 13.2V Synchronous Buck Controller with High Current Gate Driver, 600kHz 10-VSON -40 to 85
Tech specs 　 　

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Part No. K4T51163QI-HIE70
Description 32M X 16 DDR DRAM, 0.4 ns, PBGA84
File Size 801.23K  /  42 Page

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Renesas Electronics Corporation
Part No. M2040-01-533.3334
Description VCSO Based Frequency Translation PLL with Autoswitch Function
Tech specs 　 　

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    K4S511632M K4S511632M-TC K4S511632M-TL1H K4S511632M-TL1L K4S511632M-TL75

Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Part No. K4S511632M K4S511632M-TC K4S511632M-TL1H K4S511632M-TL1L K4S511632M-TL75
Description 512Mbit SDRAM
File Size 110.24K  /  11 Page

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Renesas Electronics Corporation
Part No. M30042040054X0PSAR
Description Non-Volatile 4Mb High Performance MRAM, 3.0V
Tech specs 　 　

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    Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
Part No. K4S51163PF-YF K4S51163PF-F1L K4S51163PF-F90 K4S51163PF-Y K4S51163PF-YF750
Description 32M X 16 SYNCHRONOUS DRAM, 6 ns, PBGA54 FBGA-54
8M x 16Bit x 4 Banks Mobile-SDRAM 8米16 × 4银行移动SDRAM
File Size 110.82K  /  12 Page

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Renesas Electronics Corporation
Part No. M10082040054X0ISAR
Description Non-Volatile 8Mb High Performance MRAM, 1.8V
Tech specs 　 　

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    Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
Part No. K4M511633E-Y K4M511633E K4M511633E-C K4M511633E-F1H K4M511633E-F1L K4M511633E-F75 K4M511633E-L K4M511633E-P K4M511633E-YC1H0
Description 32M X 16 SYNCHRONOUS DRAM, 7 ns, PBGA54
8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA 8米16 × 4银行4FBGA移动SDRAM
File Size 110.15K  /  12 Page

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Renesas Electronics Corporation
Part No. M30082040054X0PWAR
Description Non-Volatile 8Mb High Performance MRAM, 3.0V
Tech specs 　 　

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    Wurth Elektronik GmbH &...
Part No. 9775116360 9775116360R
Description WA-SMSR SMD Steel Spacer Reverse with internal Thread M3
File Size 280.01K  /  5 Page

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Renesas Electronics Corporation
Part No. M10162040054X0IWAR
Description Non-Volatile 16Mb High Performance MRAM, 1.8V
Tech specs 　 　

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    http://
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
Part No. K4N51163QC-ZC25 K4N51163QC-ZC36 K4N51163QC-ZC33 K4N51163QC-ZC2A
Description ; Filter Type:RFI; Current Rating:180A; Voltage Rating:480V; Series:FN258 RoHS Compliant: Yes 512MB的GDDR2 SDRAM
512Mbit gDDR2 SDRAM
File Size 1,416.01K  /  64 Page

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Renesas Electronics Corporation
Part No. M30082040054X0ISAY
Description Non-Volatile 8Mb High Performance MRAM, 3.0V
Tech specs 　 　

Official Product Page

    SAMSUNG[Samsung semiconductor]
Part No. K4N51163QC-ZC36 K4N51163QC-ZC K4N51163QC-ZC25 K4N51163QC-ZC2A K4N51163QC-ZC33
Description 512Mbit gDDR2 SDRAM
File Size 1,403.46K  /  64 Page

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Renesas Electronics Corporation
Part No. M10082040054X0PSAY
Description Non-Volatile 8Mb High Performance MRAM, 1.8V
Tech specs 　 　

Official Product Page

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