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  42.955 Datasheet PDF File

For 42.955 Found Datasheets File :: 757    Search Time::1.235ms    
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    SGM2014 SGM2014AM

SONY[Sony Corporation]
Part No. SGM2014 SGM2014AM
OCR Text ... -28.9 -31.4 -33.9 -36.9 -39.5 -42.4 -45.0 Noise Figure Characteristics (VDS = 5V, VG2S = 1.5V, ID = 10mA) f (MHz) 200 300 400 500 600 700 800 900 1000 1100 1200 1300 1400 1500 1600 1700 1800 1900 2000 NFmin (dB) 0.76 0.88 0.99 1.11 1.23...
Description GaAs N-channel Dual Gate MES FET
GaAs N-channel Dual Gate MES FET

File Size 50.04K  /  5 Page

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    UPA807 UPA807T UPA807T-T1

NEC[NEC]
Part No. UPA807 UPA807T UPA807T-T1
OCR Text ... -35.4 -37.9 -39.3 -40.8 -41.8 -42.8 -43.5 -44.4 -45.1 -45.9 -46.2 -46.8 -47.5 -48.0 -48.7 VCE = 1 V, IC = 7 mA, ZO = 50 FREQUENCY MHz ...955 0.932 0.913 0.888 0.865 0.847 0.822 0.803 0.782 0.758 0.743 0.719 0.699 0.681 0.666 0.647 S22 AN...
Description MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS SUPER MINI MOLD

File Size 55.47K  /  8 Page

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    PTF10019

ERICSSON[Ericsson]
Ericsson Microelectronics
Part No. PTF10019
OCR Text ...6 Output Power (Watts) 50 42 Efficiency (%) 58 A-1 100 2 3 4 19 568 VDD = 28 V 20 34 26 18 10 4.0 955 IDQ = 600 mA f = 960 MHz 0.0 1.0 2.0 3.0 0 Input Power (Watts) Package 20237 RF Specifications...
Description 70 Watts/ 860-960 MHz GOLDMOS Field Effect Transistor
70 Watts, 860-960 MHz GOLDMOS Field Effect Transistor
70 Watts, 86060 MHz GOLDMOS Field Effect Transistor

File Size 321.77K  /  6 Page

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    PTF10135

Ericsson Microelectronics
ERICSSON[Ericsson]
Part No. PTF10135
OCR Text ...1 1.1 -5.3 -11.1 -14.7 2.4 10.7 42.5 70.3 82.9 87.4 87.3 88.4 87.5 84.4 81.5 78.8 76.6 72.6 69.4 68.6 Mag 24.1 12.707 10.388 8.626 7.283...955 0.963 0.948 0.961 0.931 Ang -35 -73.3 -83.2 -92.6 -103.7 -112.5 -119.4 -126.7 -132.7 -137.9 ...
Description 5 Watts, 2.0 GHz GOLDMOS Field Effect Transistor

File Size 244.79K  /  6 Page

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    PTF10137

ERICSSON[Ericsson]
Ericsson Microelectronics
Part No. PTF10137
OCR Text ... A-1 234 101 37 5 699 42 5 20 0 0.0 0.2 0.4 0.6 0 Input Power (Watts) Package 20244 RF Specifications (100% T...955 0.958 0.961 0.963 0.967 0.967 0.967 0.970 0.970 0.972 0.973 0.978 0.978 0.981 0.981 0.982 0.983 ...
Description 12 Watts, 1.0 GHz GOLDMOS Field Effect Transistor 12瓦,1.0 GHz的GOLDMOS场效应晶体管
12 Watts 1.0 GHz GOLDMOS Field Effect Transistor

File Size 174.57K  /  6 Page

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    BDP951 BDP955 BDP953 Q62702-D1343 Q62702-D1339 Q62702-D1341 SIEMENSAG-Q62702-D1343

SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Part No. BDP951 BDP955 BDP953 Q62702-D1343 Q62702-D1339 Q62702-D1341 SIEMENSAG-Q62702-D1343
OCR Text ...5 200 500 3 150 - 65 ... + 150 42 17 W C mA A K/W Junction - soldering point 1) Package mounted on pcb 40mm x 40mm x 1.5mm / 6cm2 C...955 Collector-base breakdown voltage V(BR)CBO IC 100 A, IB = 0 , BDP 951 IC = 100 A, IB = 0 ,...
Description NPN Silicon AF Power Transistors (For AF drivers and output stages High collector current High current gain) NPN硅自动对焦功率晶体管输出级驱动器和高集电极电流高电流增益(为自动
From old datasheet system

File Size 41.24K  /  4 Page

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    MCK12140D MCH1214OD MCH12140

MOTOROLA[Motorola, Inc]
ON Semiconductor
MOTOROLA[Motorola Inc]
Part No. MCK12140D MCH1214OD MCH12140
OCR Text ... Max 52 52 -5.5 -5.5 150 Min 38 42 -4.75 -4.20 70C Typ 45 50 -5.2 -4.5 Max 52 58 -5.5 -5.5 150 Unit mA V A AC CHARACTERISTICS (VEE = VEE(min) - VEE(max); VCC = GND, unless otherwise noted.) -40C Characteristic Maximum Toggle Frequency P...
Description PHASE-FREQUENCY DETECTOR

File Size 69.94K  /  4 Page

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    TDA7490

STMicroelectronics
Part No. TDA7490
OCR Text ...1.25 0.50 MAX. 4.65 2.00 1.05 0.42 0.57 1.20 24.25 29.30 MIN. 0.175 0.070 0.029 0.014 0.031 0.935 1.138 inch TYP. 0.177 0.074 0.055 0.035 0....955 1.153 OUTLINE AND MECHANICAL DATA 22.07 18.57 15.50 7.70 22.87 19.37 15.90 7.95 0.86...
Description 25W 25W STEREO CLASS-D AMPLIFIER 50W MONO IN BTL

File Size 207.45K  /  9 Page

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    2SC4227 2SC4227NE68130 2SC4227-T1

NEC[NEC]
Part No. 2SC4227 2SC4227NE68130 2SC4227-T1
OCR Text ... -37.0 -38.7 -40.0 -41.0 -41.7 -42.5 -43.6 -44.6 -45.8 -47.3 -48.8 -50.1 -51.8 -53.7 -55.4 -57.3 -59.2 (VCE = 3 V, IC = 5 mA, ZO = 50 ) F...955 .937 .864 .838 .775 .745 .708 .670 .649 .621 .608 .587 .587 .573 .559 .562 .557 .557 .551 S11 AN...
Description Silicon transistor
HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD
SC70/&#181;DFN, Single/Dual Low-Voltage, Low-Power &#181;P Reset Circuits 离散

File Size 49.42K  /  8 Page

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