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  400v.6 Datasheet PDF File

For 400v.6 Found Datasheets File :: 13239    Search Time::2.578ms    
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    2SK2383

PANASONIC[Panasonic Semiconductor]
Part No. 2SK2383
OCR Text ...10V, RL = 21.4 Conditions VDS = 400V, VGS = 0 VGS = 30V, VDS = 0 ID = 1mA, VGS = 0 VDS = 25V, ID = 1mA VGS = 10V, ID = 7A VDS = 25V, ID = 7A...6 min typ max 100 1 Unit A A V V S V pF pF pF ns ns ns ns C/W C/W Input capacitance (Common Sour...
Description Silicon N-Channel Power F-MOS FET

File Size 42.68K  /  3 Page

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    FCB20N60 FCB20N60TM

FAIRCHILD[Fairchild Semiconductor]
Part No. FCB20N60 FCB20N60TM
OCR Text ...GS = 0V, f = 1.0MHz VDS = 0V to 400V, VGS = 0V VDD = 300V, ID = 20A RG = 25 -----2370 1280 95 65 165 3080 1665 -85 -pF pF pF pF pF Switch...6.5 V 6.0 V Bottom : 5.5 V Top : ID, Drain Current [A] ID , Drain Current [A] 10 1 10...
Description 600V N-Channel SuperFET
600V N-Channel MOSFET

File Size 611.95K  /  8 Page

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    FCP20N60 FCPF20N60

Fairchild Semiconductor
Part No. FCP20N60 FCPF20N60
OCR Text ...GS = 0V, f = 1.0MHz VDS = 0V to 400V, VGS = 0V VDD = 300V, ID = 20A RG = 25 -----2370 1280 95 65 165 3080 1665 -85 -pF pF pF pF pF Switch...6.5 V 6.0 V Bottom : 5.5 V Top : ID, Drain Current [A] ID , Drain Current [A] 10 1 10...
Description 600V N-Channel SuperFET
600V N-Channel MOSFET

File Size 855.17K  /  10 Page

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    HGT1S20N60B3S HGTG20N60B3 HGTP20N60B3 FN3723

http://
FAIRCHILD[Fairchild Semiconductor]
INTERSIL[Intersil Corporation]
Fairchild Semiconductor Corporation
Part No. HGT1S20N60B3S HGTG20N60B3 HGTP20N60B3 FN3723
OCR Text ...(V) 480 VCE = 600V 360 VCE = 400V VCE = 200V 120 TC = 25oC 0 0 20 40 60 80 100 Ig(REF) = 1.685mA RL = 30 12 3000 9 2000 COES ...6 3 0 QG , GATE CHARGE (nC) FIGURE 5. CAPACITANCE vs COLLECTOR TO EMITTER VOLTAGE FIG...
Description 40A/ 600V/ UFS Series N-Channel IGBTs
40A, 600V, UFS Series N-Channel IGBTs
From old datasheet system
XC9536-6VQ44C - NOT RECOMMENDED for NEW DESIGN
40 A, 600 V, N-CHANNEL IGBT

File Size 137.79K  /  6 Page

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    HGTG20N60B3D G20N60B3 G20N60B3D

FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor Corporation
Part No. HGTG20N60B3D G20N60B3 G20N60B3D
OCR Text ...pF) 480 VCE = 600V 360 VCE = 400V VCE = 200V 120 TC = 25oC Ig(REF) = 1.685mA RL = 30 0 20 40 60 QG , GATE CHARGE (nC) 80 12 3000 ...6 3 0 0 100 FIGURE 5. CAPACITANCE vs COLLECTOR TO EMITTER VOLTAGE FIGURE 6. GATE CHAR...
Description 40A / 600V / UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
40A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
3.3V 36-mc CPLD

File Size 176.68K  /  7 Page

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    SGP20N60HS SGW20N60HS

INFINEON[Infineon Technologies AG]
Part No. SGP20N60HS SGW20N60HS
OCR Text ...uency (Tj 150C, D = 0.5, VCE = 400V, VGE = 0/+15V, RG = 16) VCE, COLLECTOR-EMITTER VOLTAGE Figure 2. Safe operating area (D = 0, TC = 25...6. Typical output characteristic (Tj = 150C) T J = -5 5 C 2 5 C 1 5 0 C VCE(sat), COLLECTOR-EM...
Description High Speed IGBT in NPT-technology

File Size 429.45K  /  12 Page

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    SKW20N60 Q67040-S4242

INFINEON[Infineon Technologies AG]
Part No. SKW20N60 Q67040-S4242
OCR Text ...uency (Tj 150C, D = 0.5, VCE = 400V, VGE = 0/+15V, RG = 16) VCE, COLLECTOR-EMITTER VOLTAGE Figure 2. Safe operating area (D = 0, TC = 25...6. Typical output characteristics (Tj = 150C) 60A 50A 40A 30A 20A 10A 0A 0V Tj=+25C -55C +150C...
Description Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode

File Size 272.85K  /  14 Page

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    IRF740B IRFS740B IRF740

FAIRCHILD[Fairchild Semiconductor]
Part No. IRF740B IRFS740B IRF740
OCR Text 400V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild's p...6.3 40 30 (Note 2) (Note 1) (Note 1) (Note 3) IRFS740B 10 * 6.3 * 40 * 450 10 13.4 5.5 Units...
Description 400V N-Channel MOSFET

File Size 892.13K  /  10 Page

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    IRF740S 6111

STMicroelectronics N.V.
意法半导
SGS Thomson Microelectronics
Part No. IRF740S 6111
OCR Text 400V - 0.48 - 10 A - D2PAK PowerMESHTM MOSFET TYPE IRF740S s s s s s s V DSS 400 V R DS(on) < 0.55 ID 10 A TYPICAL RDS(on)...6.3 40 125 1.0 4.0 -65 to 150 150 (1) ISD 10 A, di/dt 120 /s, VDD V(BR)DSS, Tj TJMAX Uni t V V...
Description N-Channel 400V-0.48Ω-10A- D2PAK PowerMESHTM MOSFET(N沟道MOSFET) N沟道400V -0.48Ω- 10A条,采用D2PAK PowerMESHTM MOSFET的(不适用沟道MOSFET的)
N-Channel 400V-0.48Ω-10A- D2PAK PowerMESHTM MOSFET(N沟道MOSFET)
From old datasheet system
N - CHANNEL 400V - 0.48 - 10 A -D 2 PAK PowerMESH TM MOSFET
N - CHANNEL 400V - 0.48 ohm - 10 A - D2PAK PowerMESH] MOSFET
N - CHANNEL 400V - 0.48 Ohm -10 A -D 2 PAK PowerMESH MOSFET

File Size 92.44K  /  8 Page

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For 400v.6 Found Datasheets File :: 13239    Search Time::2.578ms    
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