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  0.0028 Datasheet PDF File

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    2EZ22

Pan Jit International Inc.
Part No. 2EZ22
OCR Text 0 Watts FEATURES l Low profile package l Built-in strain relief l l l l l l Glass passivated junction Low inductance Excellent clamping capability Typical ID less than 1 gA above 11V High temperature soldering : 260 J /10 seconds at termin...
Description GLASS PASSIVATED JUNCTION SILICON ZENER DIODE(VOLTAGE - 11 TO 200 Volts Power - 2.0 Watts)

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    2KBB10 2KBB100 2KBB20 2KBB80 2KBB 2KBB05 2KBB40 2KBB60 2KBB80R 2KBB20R 2KBB05R 2KBB100R 2KBB10R 2KBB40R 2KBB60R

IRF[International Rectifier]
International Rectifier, Corp.
Part No. 2KBB10 2KBB100 2KBB20 2KBB80 2KBB 2KBB05 2KBB40 2KBB60 2KBB80R 2KBB20R 2KBB05R 2KBB100R 2KBB10R 2KBB40R 2KBB60R
OCR Text ...nting Leads on standard 2.54mm (0.1in.) grid Compact construction High surge current capability Polarized package Equivalent to standard DIN parts IO IFSM 50Hz 60Hz I2t 50Hz 60Hz VRRM TJ 1.9 50 52 17.7 16.1 100 to 1000 - 40 to 150 ...
Description    1.9A single phase rectifier bridge
800V Bridge in a D-37 package
600V Bridge in a D-37 package
400V Bridge in a D-37 package
1000V Bridge in a D-37 package
100V Bridge in a D-37 package
50V Bridge in a D-37 package
200V Bridge in a D-37 package
2KBB SERIES 1.9A single phase rectifier bridge
From old datasheet system
Silver Mica Capacitor; Capacitance:25000pF; Capacitance Tolerance: 5%; Series:CD30; Voltage Rating:300VDC; Capacitor Dielectric Material:Mica; Termination:Radial Leaded; Lead Pitch:11.1mm; Leaded Process Compatible:Yes RoHS Compliant: Yes 1.9A单相整流
Silver Mica Capacitor; Capacitance:25000pF; Capacitance Tolerance: /- 2%; Series:CD30; Voltage Rating:300VDC; Capacitor Dielectric Material:Mica; Termination:Radial Leaded; Lead Pitch:11.1mm; Leaded Process Compatible:Yes RoHS Compliant: Yes 1.9A单相整流

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    2N3741A

MICROSEMI[Microsemi Corporation]
Part No. 2N3741A
OCR Text ... * * Low Saturation Voltage: 0.6 VCE(sat) @ IC = 1.0 Amp High Gain Characteristics: hFE @ IC = 250 mA: 30-100 Excellent Safe Area Limits Low Collector Cutoff Current: 100 nA (Max) 2N3741A Medium Power PNP Transistors DESCRIPTION: ...
Description Medium Power PNP Transistors

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    2N3741

MICROSEMI[Microsemi Corporation]
Part No. 2N3741
OCR Text ... * * Low Saturation Voltage: 0.6 VCE(sat) @ IC = 1.0 Amp High Gain Characteristics: hFE @ IC = 250 mA: 30-100 Excellent Safe Area Limits Complementary to NPN 2N3767 (2N3741) Medium Power PNP Transistors DESCRIPTION: These power tr...
Description Medium Power PNP Transistors

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    2N3811L 2N3811U 2N3810 2N3810L 2N3810U 2N3811

MICROSEMI[Microsemi Corporation]
Microsemi, Corp.
Part No. 2N3811L 2N3811U 2N3810 2N3810L 2N3810U 2N3811
OCR Text ... VCBO VEBO IC Value 60 60 5.0 50 One Both Section 1 Sections2 0.5 0.6 -65 to +200 Unit Vdc Vdc Vdc mAdc Total Power Dissipation @ TA = +250C Operating & Storage Junction Temperature Range 1) Derate linearly 2.86 mW/0C for TA > +2...
Description PNP Dual Transistors
PNP SILICON DUAL TRANSISTOR 50 mA, 60 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-78

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    2N3811

SEMICOA[Semicoa Semiconductor]
Part No. 2N3811
OCR Text ...O VEBO IC PT Rating 60 60 5.0 50 0.5 2.86 Unit V V V mA W mW/oC W mW/ C o o PT 0.6 3.43 TJ TSTG -65 to +200 -65 to +200 C C o Data Sheet No. 2N3811 Electrical Characteristics TC = 25 C unless otherwise spec...
Description Type 2N3811 Geometry 0220 Polarity PNP
Type 2N3811 Geometry 0220 Polarity PNP

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    2N3957 2N3958

http://
ETC[ETC]
INTERFET[InterFET Corporation]
Part No. 2N3957 2N3958
OCR Text ...GSS IG VGS VGS(OFF) VGS(F) IDSS 0.5 - 50 - 100 - 500 - 50 - 250 - 4.2 - 0.5 -1 -4 - 4.5 2 5 Max 2N3958 Min - 50 - 100 - 500 - 50 - 250 - 4.2 - 0.5 -1 0.5 -4 - 4.5 2 5 Max Unit V pA nA pA nA V V V V mA Process NJ16 Test Conditions IG =...
Description N-Channel Dual Silicon Junction Field-Effect Transistor

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    2N4912X 2N4910X 2N4911X

SEME-LAB[Seme LAB]
TT electronics Semelab Limited
Part No. 2N4912X 2N4910X 2N4911X
OCR Text 0.145) rad. max. 6.35 (0.250) 8.64 (0.340) 3.61 (0.142) 3.86 (0.145) rad. NPN EPITAXIAL POWER TRANSISTOR IN TO66 HERMETIC PACKAGE APPLICATIONS 24.33 (0.958) 24.43 (0.962) 14.48 (0.570) 14.99 (0.590) 4.83 (0.190) 5.33 (0.210)...
Description NPN EPITAXIAL POWER TRANSISTOR IN TO66 HERMETIC PACKAGE
NPN Epitaxial Transistor(TO-66 Hermetic PackageNPN 外延晶体管(TO-66气密封装

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    2N4938 2N6502 MD2369 MD2369A MD2369B MD7003 MD7003A MD7003B MD6002 MD7002NBSP 2N4939 MD7002B MD2905A MD3250A MD5179 MD70

CENTRAL[Central Semiconductor Corp]
Motorola, Inc
Central Corp
Central Semiconductor Corp.
Central Semiconductor, Corp.
Central Semiconductor C...
Part No. 2N4938 2N6502 MD2369 MD2369A MD2369B MD7003 MD7003A MD7003B MD6002 MD7002NBSP 2N4939 MD7002B MD2905A MD3250A MD5179 MD7002 MD7000 MD8002 MD1123 MD7021 MD7001 MD1132 MD6003 MD7004 MD982 MD984 MD985 MD986 MD1130 MD3725 MD7007 MD3251 2N4854 2N4937 MD2219A MD3250 MD3251A MD6100 MD6502 MD7002A MD7005 MD7007A MD8001 MD8003 MD918 MD918A MD918B
OCR Text ...----------10 150 10 10 10 150 3.0 300 300 0.1 0.1 0.1 0.1 0.1 0.1 1.0 1.0 1.0 MAX 10 10 1 1 1 10 1.0 30 30 10 10 10 10 10 10 10 10 10 0.5 0.4 0.25 0.25 0.25 0.4 0.4 0.4 0.4 0.35 0.35 0.35 0.35 0.35 0.35 ---150 150 10 10 10 150 10 150 150 10...
Description Leaded Small Signal Transistor Dual
HSD 8 ROW 10 COL OPEN END BP ASSY
Dual Transistors 30 mA, 40 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-78
Dual Transistors 500 mA, 30 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-78
Dual Transistors 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-78
Dual Transistors 50 mA, 40 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-78
Dual Transistors NPN, Si, SMALL SIGNAL TRANSISTOR, TO-78

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    2N5758

Seme LAB
Part No. 2N5758
OCR Text 0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) Bipolar NPN Device in a Hermetically sealed TO3 Metal Package. 38.61 (1.52) 39.12 (1.54) 0.97 (0.060) 1.10 (0.043) 29.9 (1.177) 30....
Description Bipolar NPN Device in a Hermetically sealed TO3 Metal Package

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