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MOTOROLA INC
MOTOROLA[Motorola, Inc]
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| Part No. |
MTW10N100E
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| OCR Text |
...MOS E-FET.TM Power Field Effect Transistor TO-247 with Isolated Mounting Hole
N-Channel Enhancement-Mode Silicon Gate
This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without deg... |
| Description |
TMOS POWER FET 10 AMPERES 1000 VOLTS RDS(on) = 1.3 OHM
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| File Size |
192.35K /
8 Page |
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it Online |
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MOTOROLA[Motorola, Inc]
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| Part No. |
MTW16N40E
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| OCR Text |
...MOS E-FET.TM Power Field Effect Transistor TO-247 with Isolated Mounting Hole
N-Channel Enhancement-Mode Silicon Gate
This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without deg... |
| Description |
TMOS POWER FET 16 AMPERES 400 VOLTS RDS(on) = 0.24 OHM
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| File Size |
217.51K /
8 Page |
View
it Online |
Download Datasheet |
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Motorola, Inc.
MOTOROLA[Motorola, Inc]
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| Part No. |
MTW32N25E MTW32N25
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| OCR Text |
...MOS E-FET.TM Power Field Effect Transistor TO-247 with Isolated Mounting Hole
N-Channel Enhancement-Mode Silicon Gate
This advanced TMOS E-FET is designed to withstand high energy in the avalanche and commutation modes. The new energy eff... |
| Description |
TMOS POWER FET 32 AMPERES 250 VOLTS RDS(on) = 0.08 OHM
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| File Size |
152.04K /
8 Page |
View
it Online |
Download Datasheet |
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MOTOROLA[Motorola, Inc]
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| Part No. |
MTW35N15E
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| OCR Text |
...MOS E-FET.TM Power Field Effect Transistor TO-247 with Isolated Mounting Hole
N-Channel Enhancement-Mode Silicon Gate
This advanced TMOS E-FET is designed to withstand high energy in the avalanche and commutation modes. The new energy eff... |
| Description |
TMOS POWER FET 35 AMPERES 150 VOLTS RDS(on) = 0.05 OHM
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| File Size |
169.40K /
8 Page |
View
it Online |
Download Datasheet |
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New Jersey Semi-Conductor P...
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| Part No. |
BLV20
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| OCR Text |
transistor telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 blv20 description n-p-n silicon planar epitaxial transistor intended for use in class-a, b and c operated h.f. and v.h.f. transmitters with a nominal supply voltage of 2... |
| Description |
VHP power transistor
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| File Size |
107.64K /
3 Page |
View
it Online |
Download Datasheet |
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New Jersey Semi-Conductor P...
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| Part No. |
BLV10
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| OCR Text |
...5 fax: (973) 376-8960 vhp power transistor blv10 description n-p-n silicon planar epitaxial transistor intended for use in class-a, b and c operated mobile, h.f. and v.h.f. transmitters with a nominal supply voltage of 13,5 v. the transisto... |
| Description |
VHP power transistor
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| File Size |
111.53K /
4 Page |
View
it Online |
Download Datasheet |
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Motorola, Inc.
MOTOROLA[Motorola, Inc]
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| Part No. |
MTW8N60E_D MTW8N60E MTW8N60E/D
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| OCR Text |
...MOS E-FET.TM Power Field Effect Transistor TO-247 with Isolated Mounting Hole
N-Channel Enhancement-Mode Silicon Gate
This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without deg... |
| Description |
TMOS POWER FET 8.0 AMPERES 600 VOLTS RDS(on) = 0.55 OHM
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| File Size |
65.52K /
2 Page |
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it Online |
Download Datasheet |
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