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MagnaChip Semiconductor...
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Part No. |
MDS9651URH
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OCR Text |
...rent i dm 30 30 a t a =25 o c 2 2 powerdissipation (1) t a =100 o c p d 0.8 0.8 w singlepulseavalancheenergy (2) e as 18 60.5 mj ...9a @v gs =10v i d =6.0a@v gs =10v r ds(on) r ds(on) <28m @v gs =10v <35m @v gs =10v <42m ... |
Description |
Complementary N-P Channel Trench MOSFET
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File Size |
1,212.97K /
9 Page |
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Microsemi
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Part No. |
APTM100H45FT3G
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OCR Text |
2 october, 2012 www.microsemi.com 1 C 7 11 q4 14 13 23 q2 10 8 7 3 4 22 29 31 r1 15 16 32 26 19 18 q1 q3 27 30 1615 18 ...9a 450 540 m ? v gs(th) gate threshold voltage v gs = v ds , i d = 2.5ma 3 5 v i gss ... |
Description |
Full Bridge
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File Size |
421.54K /
7 Page |
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Intersil
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Part No. |
FSYE913A0R4 FSYE23A0R4 FSYE430D
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OCR Text |
...eatures ? 3a, 500v, r ds(on) = 2.70 w ? total dose - meets pre-rad speci?cations to 100k rad (si) ? single event - safe operating area curv...9a gate to source voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ... |
Description |
Radiation Hardened/ SEGR Resistant P-Channel Power MOSFETs Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs
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File Size |
58.75K /
8 Page |
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it Online |
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Price and Availability
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