...o +150 300
Units V V A A A s w w C C C
Notes : (1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Cha...3
30A 20A
Load Current [A]
20
16
2
12
IC = 10A
8 1 4 0 -50 0 50 100 150 Duty...
...stg 80 20 10 179 -55...+150 V s w C
VGE = 15V, VCC 600V, Tj 150C
1)
Allowed number of short circuits: <1000; time between short c...3 40
K/w
Symbol
Conditions
Value min. 600 1.7 1.2 3 Typ. 2 2.4 1.4 1.25 4 14 1100 107 63...
Description
Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode
...100A/s, Tjmax =150C
A V/ns V w
dv/dt
VGS VGS Ptot
Gate source voltage Gate source voltage AC (f >1Hz) Power dissipation, TC = 25C
...3) Linear derating factor Linear derating factor, FullPAK Soldering temperature, 1.6 mm (0.063 in.) ...
Description
for lowest Conduction Losses & fastest Switching Cool MOS⑩ Power Transistor Cool MOS Power Transistor Cool MOS?/a> Power Transistor
...3.1 1) 62.1 690 1 20 20 30 34.5 w C A V A mJ
Pulsed drain current, tp limited by Tjmax Avalanche energy, single pulse
ID=10A, VDD=50V
...3) Soldering temperature, 1.6 mm (0.063 in.) from case for 10s 4) Electrical Characteristics, at T j...
Description
Cool MOS™ Power Transistor Cool MOS& Power Transistor Cool MOS Power Transistor Cool MOS Power Transistor
...r dissipation, T C = 25C
A V w C
VGS Ptot T j , T stg
208 -55... +150
Operating and storage temperature
Rev. 2.1
Page 1
...3.5 -
V
V DS=600V, VGS=0V, Tj=25C, Tj=150C
Gate-source leakage current
I GSS
V GS=20V...
Description
for lowest Conduction Losses Cool MOS Power Transistor Cool MOS⑩ Power Transistor
...t Symbol RthJA Value 300 Unit K/w
Electrical Characteristics
Tj = 25_C Parameter Forward voltage Test Conditions IF=200mA Type Symbol VF Min Typ Max 1.1 Unit V
Rev. A3, 13-Nov-98
1 (3)
1N957B...1N963B
Vishay Telefunken
Type...
Description
Silicon Z-Diodes(绋冲??靛?10V锛?ǔ瀹??娴?0mA???榻?撼浜??绠? Silicon Z-Diodes(稳定电压9.1V,稳定电0mA的硅齐纳二极 Silicon Z-Diodes(稳定电压7.5V,稳定电0mA的硅齐纳二极 From old datasheet system Silicon Z?Diodes
...
1. Overall Module Size 87.0mm(w) x 60.0mm(H) x max 13.5mm(D) for LED backlight version 87.0mm(w) x 60.0mm(H) x max 9.5mm(D) for reflective version 2. Dot Size 3. Dot Pitch 4. Duty 5. Controller IC 6. LC Fluid Options 7. Polarizer Options ...
Description
2.7-5.5V; 16characters x 4lines; dot size:0.55x0.55mm; dot pitch:0.60x0.60mm; liquid crystal display SPECIFICATIONS FOR LIQUID CRYSTAL DISPLAY
...
1. Overall Module Size 87.0mm(w) x 60.0mm(H) x max 13.5mm(D) for LED backlight version 87.0mm(w) x 60.0mm(H) x max 9.5mm(D) for reflective version 2. Dot Size 3. Dot Pitch 4. Duty 5. Controller IC 6. LC Fluid Options 7. Polarizer Options ...
Description
2.7-5.5V; 16characters x 4lines; dot size:0.55x0.55mm; dot pitch:0.60x0.60mm; liquid crystal display SPECIFICATIONS FOR LIQUID CRYSTAL DISPLAY
...
RthJA RthJS
725 565
K/w
Junction - soldering point
1) Package mounted on epoxy pcb 40mm x 40mm x 1.5mm / 0.5cm 2 Cu Semicond...3
TA = 85 C
10 -1
10 2
10 -2
TA = 25 C
10 1
10 -3
0
10
V
20
10 0...
Description
Silicon Schottky Diode (For low-loss, fast-recovery, meter protection, bias isolation and clamping applications) 2 ELEMENT, SILICON, SIGNAL DIODE Silicon Schottky Diode (For low-loss fast-recovery meter protection bias isolation and clamping applications) From old datasheet system
...
RthJA RthJS
345 275
K/w
Junction - soldering point
1) Package mounted on epoxy pcb 40mm x 40mm x 1.5mm / 6cm 2 Cu Semiconductor Group Semiconductor Group 11
Sep-09-1998 1998-11-01
BAS 40-07w
Electrical Characteristi...
Description
Silicon Schottky Diode Preliminary data (General-purpose diode for high-speed switching Circuit protection Voltage clamping) 2 ELEMENT, SILICON, SIGNAL DIODE From old datasheet system