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  us6 Datasheet PDF File

For us6 Found Datasheets File :: 177    Search Time::3.39ms    
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    Icemos Technology
Part No. ICE2N73D
OCR Text ... us7,439,583 us7,227,197b2 us6,635,906 us6,936,867 us7,015,104 us9,109,110 us7,271,067 us7,354,818 us7,052,982, us7,199,006b2 note: additional patents in china, korea, japan, taiwan, europe have also been granted to ice...
Description Enhancement Mode MOSFET

File Size 791.81K  /  9 Page

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    Icemos Technology
Part No. ICE30N080W
OCR Text ... us7,439,583 us7,227,197b2 us6,635,906 us6,936,867 us7,015,104 us9,109,110 us7,271,067 us7,354,818 us7,052,982, us7,199,006b2 note: additional patents in china, korea, japan, taiwan, europe have also been granted to ice...
Description Enhancement Mode MOSFET

File Size 537.96K  /  8 Page

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    Icemos Technology
Part No. ICE5N65D
OCR Text ... us7,439,583 us7,227,197b2 us6,635,906 us6,936,867 us7,015,104 us9,109,110 us7,271,067 us7,354,818 us7,052,982, us7,199,006b2 note: additional patents in china, korea, japan, taiwan, europe have also been granted to ice...
Description Enhancement Mode MOSFET

File Size 660.51K  /  9 Page

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    Icemos Technology
Part No. ICE22N65W
OCR Text ... us7,439,583 us7,227,197b2 us6,635,906 us6,936,867 us7,015,104 us9,109,110 us7,271,067 us7,354,818 us7,052,982, us7,199,006b2 note: additional patents in china, korea, japan, taiwan, europe have also been granted to ice...
Description N-Channel Enhancement Mode MOSFET

File Size 538.97K  /  8 Page

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    Icemos Technology
Part No. ICE22N60
OCR Text ... us7,439,583 us7,227,197b2 us6,635,906 us6,936,867 us7,015,104 us9,109,110 us7,271,067 us7,354,818 us7,052,982, us7,199,006b2 note: additional patents in china, korea, japan, taiwan, europe have also been granted to ice...
Description N-Channel Enhancement Mode MOSFET

File Size 553.14K  /  9 Page

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    KTX102U

KEC[KEC(Korea Electronics)]
Part No. KTX102U
OCR Text us6. (Ultra Super mini type with 6 leads) Simplify circuit design. A1 1 KTX102U EPITAXIAL PLANAR PNP/NPN TRANSISTOR B B1 6 5 4 D C Reduce a quantity of parts and manufacturing process. 2 3 DIM A A1 B B1 C D G MILLIM...
Description EPITAXIAL PLANAR NPN/PNP TRANSISTOR (GENERAL PURPOSE)

File Size 57.94K  /  5 Page

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    Icemos Technology
Part No. ICE22N60W
OCR Text ... us7,439,583 us7,227,197b2 us6,635,906 us6,936,867 us7,015,104 us9,109,110 us7,271,067 us7,354,818 us7,052,982, us7,199,006b2 note: additional patents in china, korea, japan, taiwan, europe have also been granted to ice...
Description N-Channel Enhancement Mode MOSFET

File Size 554.49K  /  8 Page

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    Realtek Semiconductor C...
Part No. RTL8201F-VB-CG RTL8201FN-VB-CG RTL8201FL-VB-CG
OCR Text ...459, us5,434,872, us5,732,094, us6,570,884, us 6,115,776, and us6,327,625. using this document this document is intended for the software engin eers reference and provides detailed programming information. though every effort has been...
Description SINGLE-CHIP/PORT 10/100M ETHERNET PHYCEIVER

File Size 870.78K  /  66 Page

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    Icemos Technology
Part No. ICE20N65
OCR Text ... us7,439,583 us7,227,197b2 us6,635,906 us6,936,867 us7,015,104 us9,109,110 us7,271,067 us7,354,818 us7,052,982, us7,199,006b2 note: additional patents in china, korea, japan, taiwan, europe have also been granted to ice...
Description N-Channel Enhancement Mode MOSFET

File Size 556.96K  /  9 Page

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    Icemos Technology
Part No. ICE20N170
OCR Text ... us7,439,583 us7,227,197b2 us6,635,906 us6,936,867 us7,015,104 us9,109,110 us7,271,067 us7,354,818 us7,052,982, us7,199,006b2 note: additional patents in china, korea, japan, taiwan, europe have also been granted to ice...
Description N-Channel Enhancement Mode MOSFET

File Size 550.94K  /  9 Page

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For us6 Found Datasheets File :: 177    Search Time::3.39ms    
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