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Samsung Electronic SAMSUNG[Samsung semiconductor]
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Part No. |
K4F641612B K4F641612B-L K4F641612B-TC K4F641612B-TC50 K4F661612B-TC K4F661612B K4F661612B-L K4F641612B-TL60 K4F661612B-TL60 K4F641612B-TL45 K4F661612B-TL45 K4F641612B-TL50 K4F661612B-TL50
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OCR Text |
...tRASP tRHCP tOEA tOED tOEZ tOEH twts tWTH tWRP tWRH tRASS tRPS tCHS
7 7,15 7 7
17 18
3
14
200K
ns ns
15
ns ns
13
ns ns ns ns ns ns us ns ns
6
11 11
20,21,22 20,21,22 20,21,22
K4F661612B,K4F641612B
... |
Description |
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 60ns, low power 4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 45ns, low power 4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 50ns, low power
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File Size |
842.61K /
35 Page |
View
it Online |
Download Datasheet |
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SAMSUNG[Samsung semiconductor] Samsung Electronic
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Part No. |
K4F641612C K4F641612C-L K4F641612C-TC K4F641612C-TL50 K4F661612C-TC K4F661612C K4F661612C-L K4F641612C-TL60 K4F661612C-TL60 K4F641612C-TL45 K4F661612C-TL45 K4F661612C-TL50
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OCR Text |
...tRASP tRHCP tOEA tOED tOEZ tOEH twts tWTH tWRP tWRH tRASS tRPS tCHS
7 7,15 7 7
17 18
3
14
3
6
11 11
20,21,22 20,21,22 20,21,22
K4F661612C, K4F641612C
TEST MODE CYCLE
Parameter Random read or write cycle time Rea... |
Description |
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 50ns, low power 4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 45ns, low power 4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 60ns, low power
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File Size |
842.92K /
35 Page |
View
it Online |
Download Datasheet |
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SAMSUNG[Samsung semiconductor] Samsung Electronic
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Part No. |
K4E640812B K4E660812B K4E640812B-JC-45 K4E640812B-JC-5 K4E640812B-JC-6 K4E640812B-JCL-45 K4E640812B-JCL-5 K4E640812B-JCL-6 K4E640812B-TC-45 K4E660812B-JC-6 K4E660812B-JC-45 K4E660812B-JC-5
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OCR Text |
...tRHCP tOEA tOED tCPWD tOEZ tOEH twts tWTH tWRP tWRH tDOH tREZ tWEZ tWED tOCH tCHO tOEP tWPE tRASS tRPS tCHS
7
7 7 7 7
3 13 13
6
11 11
6,14 6
15,16,17 15,16,17 15,16,17
K4E660812B, K4E640812B
TEST MODE CYCLE
Paramet... |
Description |
8M x 8bit CMOS dynamic RAM with extended data out, 45ns 8M x 8bit CMOS dynamic RAM with extended data out, 50ns 8M x 8bit CMOS dynamic RAM with extended data out, 60ns
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File Size |
415.47K /
21 Page |
View
it Online |
Download Datasheet |
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Samsung Electronic SAMSUNG[Samsung semiconductor]
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Part No. |
K4E640812C K4E660812C K4E640812C-JCL-45 K4E660812C-JC-6 K4E640812C-JC-5 K4E660812C-JC-45 K4E640812C-JC-6 K4E660812C-JC-5 K4E640812C-JC-45 K4E660812C-JCL-5
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OCR Text |
...tRHCP tOEA tOED tCPWD tOEZ tOEH twts tWTH tWRP tWRH tDOH tREZ tWEZ tWED tOCH tCHO tOEP tWPE tRASS tRPS tCHS
7
7 7 7 7
3 14 14
3
6
11 11
6,13 6
15,16,17 15,16,17 15,16,17
K4E660812C,K4E640812C
TEST MODE CYCLE
Par... |
Description |
8M x 8bit CMOS dynamic RAM with extended data out, 50ns 8M x 8bit CMOS dynamic RAM with extended data out, 60ns 8M x 8bit CMOS dynamic RAM with extended data out, 45ns
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File Size |
415.01K /
21 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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